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公开(公告)号：US20110226759A1
公开(公告)日：2011-09-22
申请号：US13065606
申请日：2011-03-25
IPC分类号： H05B6/68
CPC分类号： H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
摘要： An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
摘要翻译： 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 夹具包括用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于晶片与晶片一定距离并与其同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在包括电介质晶片支撑件和可移动地定位在离晶片一定距离处的接地金属环的固定器上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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公开(公告)号：US09048270B2
公开(公告)日：2015-06-02
申请号：US13065606
申请日：2011-03-25
CPC分类号： H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
摘要： An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
摘要翻译： 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 固定装置包含用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于与晶片相距一定距离的晶片并且与晶片同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在具有电介质晶片支架和可移动地定位在离晶片一定距离处的接地金属环的固定装置上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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3.发明申请公开(公告)号：US20070215607A1
公开(公告)日：2007-09-20
申请号：US11715548
申请日：2007-03-08
IPC分类号： H05B6/64
CPC分类号： H01L21/67115 , H01L21/67103 , H05B6/806
摘要： An apparatus for heating a semiconductor wafer includes the following: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the applicator cavity. The fixture comprises a dielectric member providing mechanical support for the wafer and a metallic ring disposed generally parallel to and concentric with the wafer at a selected distance from the wafer, whereby the application of microwave power to the wafer may be adjusted to compensate for edge effects. An associated method for heating a semiconductor wafer comprises the steps of: a. placing the wafer in a microwave applicator cavity; b. supporting the wafer on a fixture, the fixture comprising a dielectric supporting member in contact with the wafer and a metallic ring member disposed generally parallel to and concentric with the wafer at a selected distance from the wafer; and, c. introducing microwave power into the applicator cavity in order to heat the wafer, with the metallic ring serving to modify the power distribution near the wafer edge. The apparatus may be adapted to various operations in semiconductor device fabrication and testing.
摘要翻译： 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在施加器腔中支撑晶片的夹具。 固定装置包括提供用于晶片的机械支撑的电介质构件和与晶片大体平行且与晶片同心的金属环，该金属环与晶片间隔一定距离，由此微波功率施加于晶片可以调整以补偿边缘效应 。 一种用于加热半导体晶片的相关方法包括以下步骤：a。 将晶片放置在微波施加器腔中; b。 将所述晶片支撑在固定装置上，所述固定装置包括与所述晶片相接触的电介质支撑构件和金属环构件，所述金属环构件与晶片大致平行并与所述晶片同心; 和，c。 将微波功率引入施加器腔中以加热晶片，金属环用于修改晶片边缘附近的功率分布。 该装置可以适用于半导体器件制造和测试中的各种操作。
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4.发明授权公开(公告)号：US06758609B2
公开(公告)日：2004-07-06
申请号：US10167551
申请日：2002-06-11
IPC分类号： G02B6255
CPC分类号： G02B6/4239 , G02B6/255 , G02B6/2553 , G02B6/3803 , G02B6/4225 , G02B6/4226
摘要： In-situ and post-cure methods of joining optical fibers and optoelectronic components are provided. An in situ method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with non-ionizing radiation in RF/microwave energy to rapidly cure the resin. A post-cure method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that the signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with microwave energy to partially cure the resin. The joined components are then transferred to a curing oven to fully cure the adhesive resin.
摘要翻译： 提供了连接光纤和光电子部件的原位和后固化方法。 将光纤接合到光电子部件的原位方法包括将光纤和光电子部件定位在相邻关系中，使得光信号可以在其间通过，将具有粘合性质的可固化树脂施加到光纤和光电子部件的界面 使光纤和光电子部件相对于彼此对准，使得在光纤和光电子部件之间通过的光信号的信号强度基本上最大化，并且以RF /微波能量以非电离辐射照射界面以快速固化 树脂。 将光纤接合到光电子部件的后固化方法包括将光纤和光电子部件定位在相邻关系中，使得光信号可以在其间通过，将具有粘合性质的可固化树脂施加到光纤和光电子器件的界面 使光纤和光电子部件相对于彼此对准，使得在光纤和光电子部件之间通过的光信号的信号强度基本上最大化，并且用微波能量照射界面以部分地固化树脂。 然后将接合的组分转移到固化炉中以使粘合剂树脂完全固化。
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公开(公告)号：US20140305934A1
公开(公告)日：2014-10-16
申请号：US13986250
申请日：2013-04-16
CPC分类号： H05B6/686 , H01L21/67115 , H05B6/705 , H05B6/80
摘要： A materials processing system comprises a thermal processing chamber and a broadband microwave power source. The power source includes an ovenized small-signal RF circuit, a high power microwave amplifier, and forward and reflected power detectors separated from one another by an isolator. The power detectors are also preferably ovenized. A control system provides control signals to the thermally stabilized VCO and VCA in the small-signal circuit to control output power based on detected forward power compared to demanded forward power. The system may be run in either open-loop or closed-loop modes.
摘要翻译： 材料处理系统包括热处理室和宽带微波电源。 电源包括加热的小信号RF电路，高功率微波放大器以及通过隔离器彼此分离的正向和反射功率检测器。 功率检测器也优选地被加热。 控制系统向小信号电路中的热稳定化VCO和VCA提供控制信号，以根据所需的正向功率来检测正向功率来控制输出功率。 系统可以以开环或闭环模式运行。
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公开(公告)号：US20190320711A1
公开(公告)日：2019-10-24
申请号：US15959052
申请日：2018-04-20
申请人： Joseph M. Wander
发明人： Joseph M. Wander
摘要： A backing with corrugations on a first surface. The corrugations are parallel and each has an airspace along an entire longitudinal length. A second surface of the backing includes perforations or scores oriented perpendicularly or parallel to the corrugations. The corrugations or scores are fold lines or frangible tear lines. The airspaces may also include a filter material. The second surface of the backing may be adhered to a corner of a rolling paper on the surface but opposite edge as a gum strip. The corrugations are parallel to the gum strip.
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