Apparatus and method for heating semiconductor wafers via microwaves
    1.
    发明授权
    Apparatus and method for heating semiconductor wafers via microwaves 有权
    通过微波加热半导体晶片的装置和方法

    公开(公告)号:US09048270B2

    公开(公告)日:2015-06-02

    申请号:US13065606

    申请日:2011-03-25

    摘要: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

    摘要翻译: 一种用于加热半导体晶片的装置包括:微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 固定装置包含用于晶片的介电机械支撑件和接地的金属环,其可移动地定位成平行于与晶片相距一定距离的晶片并且与晶片同心,以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括:a。 将晶片放置在微波腔中; b。 将晶片支撑在具有电介质晶片支架和可移动地定位在离晶片一定距离处的接地金属环的固定装置上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。

    Apparatus and method for heating semiconductor wafers via microwaves
    2.
    发明申请
    Apparatus and method for heating semiconductor wafers via microwaves 有权
    通过微波加热半导体晶片的装置和方法

    公开(公告)号:US20110226759A1

    公开(公告)日:2011-09-22

    申请号:US13065606

    申请日:2011-03-25

    IPC分类号: H05B6/68

    摘要: An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.

    摘要翻译: 一种用于加热半导体晶片的装置包括:微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 夹具包括用于晶片的介电机械支撑件和接地的金属环,其可移动地定位成平行于晶片与晶片一定距离并与其同心,以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括:a。 将晶片放置在微波腔中; b。 将晶片支撑在包括电介质晶片支撑件和可移动地定位在离晶片一定距离处的接地金属环的固定器上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。

    Apparatus and method for heating semiconductor wafers via microwares
    3.
    发明申请
    Apparatus and method for heating semiconductor wafers via microwares 审中-公开
    通过微型加热半导体晶片的装置和方法

    公开(公告)号:US20070215607A1

    公开(公告)日:2007-09-20

    申请号:US11715548

    申请日:2007-03-08

    IPC分类号: H05B6/64

    摘要: An apparatus for heating a semiconductor wafer includes the following: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the applicator cavity. The fixture comprises a dielectric member providing mechanical support for the wafer and a metallic ring disposed generally parallel to and concentric with the wafer at a selected distance from the wafer, whereby the application of microwave power to the wafer may be adjusted to compensate for edge effects. An associated method for heating a semiconductor wafer comprises the steps of: a. placing the wafer in a microwave applicator cavity; b. supporting the wafer on a fixture, the fixture comprising a dielectric supporting member in contact with the wafer and a metallic ring member disposed generally parallel to and concentric with the wafer at a selected distance from the wafer; and, c. introducing microwave power into the applicator cavity in order to heat the wafer, with the metallic ring serving to modify the power distribution near the wafer edge. The apparatus may be adapted to various operations in semiconductor device fabrication and testing.

    摘要翻译: 一种用于加热半导体晶片的装置包括:微波源; 一个涂抹腔; 以及用于在施加器腔中支撑晶片的夹具。 固定装置包括提供用于晶片的机械支撑的电介质构件和与晶片大体平行且与晶片同心的金属环,该金属环与晶片间隔一定距离,由此微波功率施加于晶片可以调整以补偿边缘效应 。 一种用于加热半导体晶片的相关方法包括以下步骤:a。 将晶片放置在微波施加器腔中; b。 将所述晶片支撑在固定装置上,所述固定装置包括与所述晶片相接触的电介质支撑构件和金属环构件,所述金属环构件与晶片大致平行并与所述晶片同心; 和,c。 将微波功率引入施加器腔中以加热晶片,金属环用于修改晶片边缘附近的功率分布。 该装置可以适用于半导体器件制造和测试中的各种操作。