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1.发明授权公开(公告)号：US06758609B2
公开(公告)日：2004-07-06
申请号：US10167551
申请日：2002-06-11
IPC分类号： G02B6255
CPC分类号： G02B6/4239 , G02B6/255 , G02B6/2553 , G02B6/3803 , G02B6/4225 , G02B6/4226
摘要： In-situ and post-cure methods of joining optical fibers and optoelectronic components are provided. An in situ method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with non-ionizing radiation in RF/microwave energy to rapidly cure the resin. A post-cure method of joining an optical fiber to an optoelectronic component includes positioning an optical fiber and optoelectronic component in adjacent relationship such that light signals can pass therebetween, applying a curable resin having adhesive properties to an interface of the optical fiber and the optoelectronic component, aligning the optical fiber and optoelectronic component relative to each other such that the signal strength of light signals passing between the optical fiber and the optoelectronic component is substantially maximized, and irradiating the interface with microwave energy to partially cure the resin. The joined components are then transferred to a curing oven to fully cure the adhesive resin.
摘要翻译： 提供了连接光纤和光电子部件的原位和后固化方法。 将光纤接合到光电子部件的原位方法包括将光纤和光电子部件定位在相邻关系中，使得光信号可以在其间通过，将具有粘合性质的可固化树脂施加到光纤和光电子部件的界面 使光纤和光电子部件相对于彼此对准，使得在光纤和光电子部件之间通过的光信号的信号强度基本上最大化，并且以RF /微波能量以非电离辐射照射界面以快速固化 树脂。 将光纤接合到光电子部件的后固化方法包括将光纤和光电子部件定位在相邻关系中，使得光信号可以在其间通过，将具有粘合性质的可固化树脂施加到光纤和光电子器件的界面 使光纤和光电子部件相对于彼此对准，使得在光纤和光电子部件之间通过的光信号的信号强度基本上最大化，并且用微波能量照射界面以部分地固化树脂。 然后将接合的组分转移到固化炉中以使粘合剂树脂完全固化。
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公开(公告)号：US20110226759A1
公开(公告)日：2011-09-22
申请号：US13065606
申请日：2011-03-25
IPC分类号： H05B6/68
CPC分类号： H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
摘要： An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture comprises a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer comprises: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture comprising a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
摘要翻译： 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 夹具包括用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于晶片与晶片一定距离并与其同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在包括电介质晶片支撑件和可移动地定位在离晶片一定距离处的接地金属环的固定器上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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公开(公告)号：US09048270B2
公开(公告)日：2015-06-02
申请号：US13065606
申请日：2011-03-25
CPC分类号： H05B6/80 , H01L21/324 , H01L21/67109 , H01L21/67115 , H01L21/67248 , H01L22/26 , H05B6/6411 , H05B6/645 , H05B6/806
摘要： An apparatus for heating a semiconductor wafer includes: a microwave source; an applicator cavity; and, a fixture for supporting a wafer in the cavity. The fixture contains a dielectric mechanical support for the wafer and a grounded metallic ring movably positioned parallel to and concentric with the wafer at some distance from the wafer, to adjust the microwave power distribution to compensate for edge effects. A closed-loop feedback system adjusts the distance based on wafer edge and center temperatures. A method for heating a semiconductor wafer includes: a. placing the wafer in a microwave cavity; b. supporting the wafer on a fixture having a dielectric wafer support and a grounded metallic ring movably positioned at some distance from the wafer; c. introducing microwave power into the cavity to heat the wafer; and d. adjusting the distance between wafer and ring to modify the power distribution near the wafer edge.
摘要翻译： 一种用于加热半导体晶片的装置包括：微波源; 一个涂抹腔; 以及用于在所述腔中支撑晶片的固定装置。 固定装置包含用于晶片的介电机械支撑件和接地的金属环，其可移动地定位成平行于与晶片相距一定距离的晶片并且与晶片同心，以调整微波功率分布以补偿边缘效应。 闭环反馈系统根据晶圆边缘和中心温度调节距离。 一种用于加热半导体晶片的方法包括：a。 将晶片放置在微波腔中; b。 将晶片支撑在具有电介质晶片支架和可移动地定位在离晶片一定距离处的接地金属环的固定装置上; C。 将微波功率引入腔体以加热晶片; 和d。 调整晶片和环之间的距离以修改晶片边缘附近的功率分布。
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公开(公告)号：US06312548B1
公开(公告)日：2001-11-06
申请号：US08625752
申请日：1996-03-29
申请人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
发明人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
IPC分类号： B32B3100
CPC分类号： B29C65/1425 , B29C65/1435 , B29C65/148 , B29C65/1483 , B29C65/4835 , B29C65/4845 , B29C65/524 , B29C66/1122 , B29C66/433 , B29C66/45 , B29C66/474 , B29C66/526 , B29C66/5346 , B29C66/71 , B29C66/712 , B29C66/73112 , B29C66/73143 , B29C66/73921 , B29C66/83413 , B29C66/964 , B29L2031/737 , C09J5/06 , Y10T428/2922 , B29K2063/00
摘要： The bonding of components is facilitated by a conductive pattern which generates heat upon being irradiated with microwave or RF energy. The electrically conductive pattern is positioned on a first component surface and a curable resin having adhesive properties is applied thereto. A second component surface is placed in contacting relation with the resin and the conductive pattern is irradiated with microwave or RF energy to facilitate curing wherein the components are bonded together along the pattern. The conductive pattern can be utilized without adhesive resin wherein heat generated via the application of microwave or RF energy causes components to fuse together. The conductive pattern can be enveloped by polymeric material, wherein the polymeric material becomes the adhesive for bonding components when microwave or RF energy is applied.
摘要翻译： 通过在用微波或RF能量照射时产生热量的导电图案来促进部件的接合。 导电图案位于第一组分表面上，并且具有粘合性的可固化树脂被施加到其上。 将第二组分表面与树脂接触，并且用微波或RF能量照射导电图案以促进固化，其中组分沿着图案结合在一起。 可以使用导电图案而不使用粘合树脂，其中通过施加微波或RF能量产生的热量导致部件熔合在一起。 导电图案可以被聚合物材料包围，其中当施加微波或RF能量时，聚合物材料变成用于粘结部件的粘合剂。
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5.发明授权
公开(公告)号：US5738915A
公开(公告)日：1998-04-14
申请号：US716043
申请日：1996-09-19
CPC分类号： B24B37/013 , B05D3/029 , B29C65/1425 , B29C66/71 , B29C66/712 , B29C66/73751 , B29C66/7394 , B29C66/91411 , B29C66/91443 , B29C66/9161 , H01L21/3105 , H01L21/56 , H01L22/26 , B29C66/8266 , B29C66/82661 , B29C66/964 , H01L2924/0002
摘要： Rapid curing of polymer layers on semiconductor substrates is facilitated using variable frequency microwave energy. A semiconductor substrate having a polymer layer thereon is placed in a microwave furnace cavity, and then swept with a range of microwave frequencies. The range of frequencies includes a central frequency selected to rapidly heat the polymer layer. The range of frequencies is selected to generate a plurality of modes within the cavity. The sweep rate is selected so as to avoid damage to the semiconductor substrate and/or any components thereon. The microwave power may be adjusted during frequency sweeping to control the temperature of the polymer layer and the semiconductor substrate. Effluent produced during the curing of the polymer layer may be removed from the furnace cavity. The extent of cure of the polymer layer may be determined by detecting power reflection for each microwave frequency within the range to provide power reflection data, and then comparing the power reflection data with a predetermined set of power reflection data.
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6.发明授权System and apparatus for reducing arcing and localized heating during microwave processing 失效微波处理期间减少电弧和局部加热的系统和装置
公开(公告)号：US5844216A
公开(公告)日：1998-12-01
申请号：US908398
申请日：1997-08-07
申请人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
发明人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
CPC分类号： H05K3/3494 , H05B6/80 , H05K2203/102
摘要： An apparatus for reducing arcing and localized heating as a result of applying microwave energy to a microelectronic substrate having electronic components thereon is provided. A microwave furnace having a chamber is configured to secure a microelectronic substrate therewithin. The microelectronic substrate is electrically interconnected with a ground connected to an interior wall of the microwave furnace. A holder for securing a microelectronic substrate during the application of microwave energy and for providing the necessary electrical connections for grounding components and circuitry thereon is also provided. The holder may have a heat sink for protection against heat build-up and for maintaining a microelectronic substrate in a substantially flat orientation during microwave processing.
摘要翻译： 提供了一种用于通过向其上具有电子部件的微电子基板施加微波能量来减少电弧和局部加热的装置。 具有室的微波炉配置成将微电子衬底固定在其中。 微电子衬底与连接到微波炉内壁的接地电互连。 还提供了一种用于在施加微波能量期间固定微电子衬底并用于为其上接地部件和电路提供必要的电连接的保持器。 保持器可以具有用于防止热积聚的散热器并且用于在微波处理期间将微电子基板保持在基本平坦的取向。
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公开(公告)号：US5644837A
公开(公告)日：1997-07-08
申请号：US497019
申请日：1995-06-30
申请人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
发明人： Zakaryae Fathi , Richard S. Garard , Jianghua Wei
CPC分类号： H05K3/3494 , H05B6/80 , H05K3/305 , H05K2203/102 , H05K3/321 , Y02P70/613 , Y10T29/4913 , Y10T29/49144
摘要： The present invention provides a process for assembling electronics which allows for rapid heating and fast curing, and avoids subjecting the components to potentially damaging cure conditions. The process includes applying conductive or non-conductive curable thermoplastic or thermosetting resins, having adhesive properties, to a surface of the substrate or electrical component or both. One or more electrical components may be mounted on the substrate using the adhesive properties of the resin. The resin is then subjected to variable frequency microwave irradiation selected to cure the resin without adversely affecting the substrate or electrical components.
摘要翻译： 本发明提供一种用于组装电子装置的方法，其允许快速加热和快速固化，并且避免对组分进行潜在的破坏性固化条件。 该方法包括将具有粘合性质的导电或非导电可固化的热塑性或热固性树脂涂覆到基底或电气部件或两者的表面上。 可以使用树脂的粘合性质将一个或多个电气部件安装在基板上。 然后对树脂进行选择的可变频率微波照射以固化树脂，而不会不利地影响基板或电气部件。
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8.发明授权
公开(公告)号：US5648038A
公开(公告)日：1997-07-15
申请号：US531045
申请日：1995-09-20
摘要： Systems and methods for monitoring workpiece and workpiece material characteristics using microwave energy are disclosed. A system includes a chamber, including means for generating variable frequency microwave energy; means for positioning a workpiece within the chamber; means for subjecting the workpiece to a plurality of different microwave frequencies; and means for monitoring characteristics of the workpiece. One or more characteristics of a workpiece, or workpiece material, may be monitored by positioning the workpiece within a chamber having means for generating variable frequency microwave energy; subjecting the workpiece to microwave irradiation at a plurality of frequencies; detecting power reflection for each one of the plurality of microwave frequencies to provide power reflection data; and comparing the power reflection data to a predetermined set of power reflection data. The result of signature analysis can be coupled with a product process controller to achieve a real-time feedback control on monitoring and adjusting of process parameters.
摘要翻译： 公开了使用微波能量监测工件和工件材料特性的系统和方法。 一种系统包括一个室，包括产生可变频率微波能量的装置; 用于将工件定位在所述腔室内的装置; 用于使所述工件经受多个不同微波频率的装置; 以及用于监测工件特性的装置。 可以通过将工件定位在具有用于产生可变频率微波能量的装置的腔室内来监测工件或工件材料的一个或多个特性; 以多个频率对工件进行微波照射; 检测所述多个微波频率中的每一个的功率反射以提供功率反射数据; 以及将功率反射数据与预定的功率反射数据集进行比较。 签名分析的结果可以与产品过程控制器相结合，以实现对过程参数的监控和调整的实时反馈控制。
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9.发明授权Curing polymer layers on semiconductor substrates using variable frequency microwave energy 失效使用可变频率微波能量固化半导体衬底上的聚合物层
公开(公告)号：US5879756A
公开(公告)日：1999-03-09
申请号：US947945
申请日：1997-10-09
CPC分类号： B24B37/013 , B05D3/029 , B29C65/1425 , B29C66/71 , B29C66/712 , B29C66/73751 , B29C66/7394 , B29C66/91411 , B29C66/91443 , B29C66/9161 , H01L21/3105 , H01L21/56 , H01L22/26 , B29C66/8266 , B29C66/82661 , B29C66/964 , H01L2924/0002
摘要： Rapid curing of polymer layers on semiconductor substrates is facilitated using variable frequency microwave energy. A semiconductor substrate having a polymer layer thereon is placed in a microwave furnace cavity, and then swept with a range of microwave frequencies. The range of frequencies includes a central frequency selected to rapidly heat the polymer layer. The range of frequencies is selected to generate a plurality of modes within the cavity. The sweep rate is selected so as to avoid damage to the semiconductor substrate and/or any components thereon. The microwave power may be adjusted during frequency sweeping to control the temperature of the polymer layer and the semiconductor substrate. Effluent produced during the curing of the polymer layer may be removed from the furnace cavity. The extent of cure of the polymer layer may be determined by detecting power reflection for each microwave frequency within the range to provide power reflection data, and then comparing the power reflection data with a predetermined set of power reflection data.
摘要翻译： 使用可变频率微波能量可以促进半导体衬底上聚合物层的快速固化。 将其上具有聚合物层的半导体衬底放置在微波炉腔中，然后以一定范围的微波频率扫过。 频率范围包括选择的快速加热聚合物层的中心频率。 选择频率范围以在空腔内产生多个模式。 选择扫描速率以避免损坏半导体衬底和/或其上的任何部件。 可以在扫频期间调整微波功率以控制聚合物层和半导体衬底的温度。 在聚合物层固化期间产生的流出物可以从炉腔中除去。 可以通过检测在该范围内的每个微波频率的功率反射来确定聚合物层的固化程度，以提供功率反射数据，然后将功率反射数据与预定的功率反射数据集合进行比较。
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公开(公告)号：US20070215612A1
公开(公告)日：2007-09-20
申请号：US11384672
申请日：2006-03-20
IPC分类号： H05B6/74
摘要： A microwave heating apparatus is designed to improve distribution of the microwaves introduced into a multi-mode microwave cavity for heating or other selected applications. The microwave heating apparatus includes a microwave signal generator and a waveguide to convey microwave power to the cavity. A perforated metal plate disposed within the cavity encloses a volume adjacent to the waveguide opening, forming a leaky multimode subcavity. Through multiple processes of reflection, transmission, diffraction, and scattering, the leaky subcavity serves to smooth the microwave power distribution in the near-field region adjacent to the waveguide to better disperse the energy throughout the main applicator cavity. A more uniform level of microwave power is thereby applied to the workpiece.
摘要翻译： 微波加热装置被设计成改善引入到用于加热或其它选择的应用的多模式微波空腔中的微波的分布。 微波加热装置包括微波信号发生器和将微波功率传送到空腔的波导。 设置在空腔内的穿孔金属板围绕与波导开口相邻的体积，形成泄漏的多模子腔。 通过反射，透射，衍射和散射的多个过程，泄漏子腔用于平滑与波导相邻的近场区域中的微波功率分布，以更好地将能量分散在整个主施加器腔体中。 因此，对工件施加更均匀的微波功率。
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