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公开(公告)号：US08865544B2
公开(公告)日：2014-10-21
申请号：US13546927
申请日：2012-07-11
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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2.发明申请Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权多材料结构，半导体结构和形成电容器的方法公开(公告)号：US20140015097A1
公开(公告)日：2014-01-16
申请号：US13546927
申请日：2012-07-11
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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