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1.发明申请Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权多材料结构，半导体结构和形成电容器的方法公开(公告)号：US20140015097A1
公开(公告)日：2014-01-16
申请号：US13546927
申请日：2012-07-11
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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公开(公告)号：US08865544B2
公开(公告)日：2014-10-21
申请号：US13546927
申请日：2012-07-11
IPC分类号： H01L21/8242
CPC分类号： H01L28/75 , B82Y30/00 , H01L27/10808 , H01L27/10852 , H01L28/65 , H01L28/90 , Y10S977/932 , Y10T428/265
摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.
摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。
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公开(公告)号：US08946043B2
公开(公告)日：2015-02-03
申请号：US13332816
申请日：2011-12-21
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的单个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。
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公开(公告)号：US20130164902A1
公开(公告)日：2013-06-27
申请号：US13332816
申请日：2011-12-21
IPC分类号： H01L21/02
CPC分类号： H01L28/92 , H01L21/32133 , H01L27/108 , H01L27/10852 , H01L27/10861 , H01L28/90
摘要： A method of forming capacitors includes forming support material over a substrate. A first capacitor electrode is formed within individual openings in the support material. A first etching is conducted only partially into the support material using a liquid etching fluid to expose an elevationally outer portion of sidewalls of individual of the first capacitor electrodes. A second etching is conducted into the support material using a dry etching fluid to expose an elevationally inner portion of the sidewalls of the individual first capacitor electrodes. A capacitor dielectric is formed over the outer and inner portions of the sidewalls of the first capacitor electrodes. A second capacitor electrode is formed over the capacitor dielectric.
摘要翻译： 形成电容器的方法包括在衬底上形成支撑材料。 第一电容器电极形成在支撑材料中的各个开口内。 使用液体蚀刻流体仅部分地将第一蚀刻部分地进入支撑材料，以暴露第一电容器电极的各个侧壁的正面外侧部分。 使用干蚀刻流体将第二蚀刻进入支撑材料，以暴露各个第一电容器电极的侧壁的正面内部。 在第一电容器电极的侧壁的外部和内部上形成电容器电介质。 在电容器电介质上形成第二电容电极。
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公开(公告)号：US08513135B2
公开(公告)日：2013-08-20
申请号：US13246050
申请日：2011-09-27
IPC分类号： H01L21/302
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。
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公开(公告)号：US20090017627A1
公开(公告)日：2009-01-15
申请号：US11777005
申请日：2007-07-12
IPC分类号： H01L21/311
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。
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7.发明授权Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array 有权形成非易失性电阻氧化物存储单元的方法和形成非易失性电阻氧化物存储器阵列的方法公开(公告)号：US09343665B2
公开(公告)日：2016-05-17
申请号：US12166604
申请日：2008-07-02
申请人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
发明人： Nishant Sinha , John Smythe , Bhaskar Srinivasan , Gurtej S. Sandhu , Joseph Neil Greeley , Kunal R. Parekh
CPC分类号： H01L45/1683 , H01L27/2472 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/147 , H01L45/16
摘要： A method of forming a non-volatile resistive oxide memory cell includes forming a first conductive electrode of the memory cell as part of a substrate. Metal oxide-comprising material is formed over the first conductive electrode. Etch stop material is deposited over the metal oxide-comprising material. Conductive material is deposited over the etch stop material. A second conductive electrode of the memory cell which comprises the conductive material received is formed over the etch stop material. Such includes etching through the conductive material to stop relative to the etch stop material and forming the non-volatile resistive oxide memory cell to comprise the first and second conductive electrodes having both the metal oxide-comprising material and the etch stop material therebetween. Other implementations are contemplated.
摘要翻译： 形成非易失性电阻氧化物存储单元的方法包括：形成存储单元的第一导电电极作为衬底的一部分。 含金属氧化物的材料形成在第一导电电极上。 蚀刻停止材料沉积在包含金属氧化物的材料上。 导电材料沉积在蚀刻停止材料上。 包含所接收的导电材料的存储单元的第二导电电极形成在蚀刻停止材料上。 这样包括通过导电材料蚀刻以相对于蚀刻停止材料停止并且形成非易失性电阻氧化物存储单元，以包括具有包含金属氧化物的材料和其间的蚀刻停止材料的第一和第二导电电极。 考虑其他实现。
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公开(公告)号：US20120015520A1
公开(公告)日：2012-01-19
申请号：US13246050
申请日：2011-09-27
IPC分类号： H01L21/308 , H01L21/306
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。
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公开(公告)号：US08026180B2
公开(公告)日：2011-09-27
申请号：US11777005
申请日：2007-07-12
IPC分类号： H01N21/302
CPC分类号： H01L21/0337
摘要： Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges of such features through the reaction and subsequent removal of material.
摘要翻译： 提供了利用非等离子体和非湿蚀刻氟化物处理技术减少间隔物的线粗糙度和其它特征的方法。 这些方法的实施方案可以用于通过反应和随后的材料去除而沿着这些特征的边缘的间隔物或线减少和/或平滑表面。
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