公开(公告)号：US20120077339A1

公开(公告)日：2012-03-29

申请号：US12893399

申请日：2010-09-29

申请人： Chung-Chi KO ,  Chia Cheng CHOU ,  Keng-Chu LIN ,  Joung-Wei LIOU ,  Shwang-Ming JENG ,  Mei-Ling CHEN

发明人： Chung-Chi KO ,  Chia Cheng CHOU ,  Keng-Chu LIN ,  Joung-Wei LIOU ,  Shwang-Ming JENG ,  Mei-Ling CHEN

IPC分类号： H01L21/768 ,  H05B1/00

CPC分类号： H01L21/768 ,  H01L21/02126 ,  H01L21/02134 ,  H01L21/02137 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/70 ,  H01L21/76811 ,  H01L21/76813 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76828

摘要： A method of and apparatus for forming interconnects on a substrate includes etching patterns in ultra-low k dielectric and removing moisture from the ultra-low k dielectric using active energy assist baking. During active energy assist baking, the ultra-low k dielectric is heated and exposed to light having only wavelengths greater than 400 nm for about 1 to about 20 minutes at a temperature of about 300 to about 400 degrees Celsius. The active energy assist baking is performed after wet-cleaning or after chemical mechanical polishing, or both.

摘要翻译： 用于在衬底上形成互连的方法和装置包括在超低k电介质中的蚀刻图案，并且使用主动能量辅助烘烤从超低k电介质去除湿气。 在活性能量辅助烘烤期间，在约300至约400摄氏度的温度下，超低k电介质被加热并暴露于仅具有大于400nm波长的光约1至约20分钟。 活性能量辅助烘烤在湿清洗或化学机械抛光之后进行，或两者都进行。

公开(公告)号：US20130137261A1

公开(公告)日：2013-05-30

申请号：US13306340

申请日：2011-11-29

申请人： Joung-Wei LIOU ,  Chung-Chi KO ,  Chia-Cheng CHOU ,  Keng-Chu LIN

发明人： Joung-Wei LIOU ,  Chung-Chi KO ,  Chia-Cheng CHOU ,  Keng-Chu LIN

IPC分类号： H01L21/768 ,  H01L21/26 ,  H01L21/324

CPC分类号： H01L21/02063 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76828

摘要： A dielectric layer having features etched thereon and a low dielectric constant, and that is carried by a semiconductor substrate. The etched dielectric layer is modified so its surface energy is reduced by at least one of: (a) applying thermal energy to the layer to cause the layer temperature to be between 100 C and 400 C; (b) irradiating the layer with electromagnetic energy; and/or (c) irradiating the layer with free ions.

摘要翻译： 具有蚀刻在其上的特征和低介电常数并且由半导体衬底承载的电介质层。 蚀刻的介电层被改性，使得其表面能量通过以下至少一个来降低：（a）向该层施加热能以使层温度在100℃和400℃之间; （b）用电磁能照射该层; 和/或（c）用游离离子照射该层。

公开(公告)号：US20110207329A1

公开(公告)日：2011-08-25

申请号：US12712515

申请日：2010-02-25

申请人： Po-Cheng SHIH ,  Kuan-Chen WANG ,  Chung-Chi KO ,  Keng-Chu LIN ,  Tai-Yen PENG ,  Wen-Kuo HSIEH ,  Chih-Hao CHEN

发明人： Po-Cheng SHIH ,  Kuan-Chen WANG ,  Chung-Chi KO ,  Keng-Chu LIN ,  Tai-Yen PENG ,  Wen-Kuo HSIEH ,  Chih-Hao CHEN

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76813

摘要： A method of lithography patterning includes forming a mask layer on a material layer and forming a capping layer on the mask layer. The capping layer is a boron-containing layer with a higher resistance to an etching reaction of patterning process of the material layer. By adapting the boron-containing layer as the capping layer, the thickness of the mask layer can be thus reduced. Hence, a better gap filling for forming an interconnect metallization in the material layer could be achieved as well.

摘要翻译： 光刻图案的方法包括在材料层上形成掩模层并在掩模层上形成覆盖层。 覆盖层是对材料层的图案化处理的蚀刻反应性更高的含硼层。 通过使含硼层适合作为覆盖层，可以减小掩模层的厚度。 因此，也可以实现用于在材料层中形成互连金属化的更好的间隙填充。

公开(公告)号：US20110195576A1

公开(公告)日：2011-08-11

申请号：US12701927

申请日：2010-02-08

申请人： Chung-Chi KO ,  Chih-Hao CHEN ,  Keng-Chu LIN

发明人： Chung-Chi KO ,  Chih-Hao CHEN ,  Keng-Chu LIN

IPC分类号： H01L21/311

CPC分类号： H01L21/31105 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76813 ,  H01L21/76816 ,  H01L21/76832

摘要： A method of lithography patterning includes forming a first etch stop layer, a second etch stop layer, and a hard mask layer on a material layer. The materials of the first etch stop layer and the second etch stop layer are selected by the way that there is a material gradient composition between the second etch stop layer, the first etch stop layer, and the material layer. Hence, gradient etching rates between the second etch stop layer, the first etch stop layer, and the material layer are achieved in an etching process to form etched patterns with smooth and/or vertical sidewalls within the second and the first etch stop layers and the material layer.

摘要翻译： 光刻图案的方法包括在材料层上形成第一蚀刻停止层，第二蚀刻停止层和硬掩模层。 通过在第二蚀刻停止层，第一蚀刻停止层和材料层之间存在材料梯度组成的方式来选择第一蚀刻停止层和第二蚀刻停止层的材料。 因此，在蚀刻工艺中实现第二蚀刻停止层，第一蚀刻停止层和材料层之间的梯度蚀刻速率，以在第二和第一蚀刻停止层内形成具有平滑和/或垂直侧壁的蚀刻图案，并且 材料层。