公开(公告)号：US07479462B2

公开(公告)日：2009-01-20

申请号：US11213427

申请日：2005-08-29

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

IPC分类号： H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。