公开(公告)号：US07479462B2

公开(公告)日：2009-01-20

申请号：US11213427

申请日：2005-08-29

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T.Teemu T. Tormanen

IPC分类号： H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。

公开(公告)号：US07473650B2

公开(公告)日：2009-01-06

申请号：US11606941

申请日：2006-12-01

申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR33的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 33的化合物; 水解和冷凝R1MOR33，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。

公开(公告)号：US06974970B2

公开(公告)日：2005-12-13

申请号：US10346449

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

IPC分类号： C08G77/24 ,  C08G77/58 ,  C09K13/00 ,  H01L20060101 ,  H01L21/312 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/522 ,  H01L23/532 ,  H01L35/24

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： Thin films are disclosed that are suitable as dielectrics in IC's and for other similar applications. In particular, the invention concerns thin films comprising compositions obtainable by hydrolysis of two or more silicon compounds, which yield an at least partially cross-linked siloxane structure. The invention also concerns a method for producing such films by preparing siloxane compositions by hydrolysis of suitable reactants, by applying the hydrolyzed compositions on a substrate in the form of a thin layer and by curing the layer to form a film. In one example, a thin film comprising a composition is obtained by hydrolyzing a monomeric silicon compound having at least one hydrocarbyl radical, containing an unsaturated carbon-to-carbon bond, and at least one hydrolyzable group attached to the silicon atom of the compound with another monomeric silicon compound having at least one aryl group and at least one hydrolyzable group attached to the silicon atom of the compound to form a siloxane material.

摘要翻译： 公开了适合作为IC中的电介质和其它类似应用的薄膜。 特别地，本发明涉及包含通过水解两种或更多种硅化合物获得的组合物的薄膜，其产生至少部分交联的硅氧烷结构。 本发明还涉及通过将水解的组合物以薄层的形式施加在基材上并通过固化该层以形成膜而通过水解合适的反应物制备硅氧烷组合物来生产这种膜的方法。 在一个实例中，包含组合物的薄膜通过水解具有至少一个含有不饱和碳 - 碳键的烃基的单体硅化合物和至少一个与化合物的硅原子连接的可水解基团来获得， 具有至少一个芳基的至少一个单体硅化合物和至少一个与化合物的硅原子连接以形成硅氧烷材料的可水解基团。

公开(公告)号：US07060634B2

公开(公告)日：2006-06-13

申请号：US10346451

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

发明人： Juha T. Rantala ,  Jason S. Reid ,  Nungavram S. Viswanathan ,  T. Teemu T. Tormanen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/316 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An integrated circuit is provided comprising a substrate and discrete areas of electrically insulating and electrically conductive material, wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more and a dielectric constant of 3.0 or less. The integrated circuit can be made by a method comprising: providing a substrate; forming discrete areas of electrically insulating and electrically conductive material on the substrate; wherein the electrically insulating material is deposited on the substrate followed by heating at a temperature of 350° C. or less; and wherein the electrically insulating material is a hybrid organic-inorganic material that has a density of 1.45 g/cm3 or more after densification. Also disclosed is a method for making an integrated circuit comprising performing a dual damascene method with an electrically conductive material and a dielectric, the dielectric being a directly photopatterned hybrid organic-inorganic material.

摘要翻译： 提供一种集成电路，其包括基板和电绝缘和导电材料的离散区域，其中电绝缘材料是具有1.45g / cm 3以上的密度的杂化有机 - 无机材料 介电常数为3.0以下。 集成电路可以通过以下方法制成：包括：提供衬底; 在衬底上形成电绝缘和导电材料的离散区域; 其中所述电绝缘材料沉积在所述基板上，然后在350℃或更低的温度下加热; 并且其中所述电绝缘材料是在致密化之后具有1.45g / cm 3以上的密度的混合有机 - 无机材料。 还公开了一种用于制造集成电路的方法，包括用导电材料和电介质进行双镶嵌方法，所述电介质是直接光刻图案化的杂化有机 - 无机材料。

公开(公告)号：US07144827B2

公开(公告)日：2006-12-05

申请号：US10346539

申请日：2003-01-17

申请人： Juha T. Rantala ,  Jason S. Reid ,  T Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

发明人： Juha T. Rantala ,  Jason S. Reid ,  T Teemu T. Tormanen ,  Nungavram S. Viswanathan ,  Arto L. T. Maaninen

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit. Also disclosed is a method for making an integrated circuit comprising forming alternating areas of electrically conductive and dielectric materials, the dielectric materials formed by hydrolysing, partially or fully, one or more precursors, at least one of which having the formula (I): where R2 is a halogen, —OH, or alkoxy group, where M1 and M2 are independently a metal or metalloid, and where R1 is a fully or partially fluorinated alkyl group having from 1 to 10 carbon atoms or a fully or partially fluorinated aromatic group.

公开(公告)号：US20100215839A1

公开(公告)日：2010-08-26

申请号：US12588364

申请日：2009-10-13

申请人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

发明人： Juha T. Rantala ,  Jason S. Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan

IPC分类号： H05K3/00

CPC分类号： H01L21/3121 ,  C07F7/0874 ,  C07F7/12 ,  C07F7/123 ,  C07F7/1804 ,  C07F7/1888 ,  C09D183/04 ,  C09D183/14 ,  H01L21/02131 ,  H01L21/02211 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/0271 ,  H01L21/31133 ,  H01L21/3122 ,  H01L21/31629 ,  H01L21/31633 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76825

摘要： A method for making an integrated circuit is disclosed comprising depositing alternating regions of electrically conductive material and hybrid organic inorganic dielectric material on a substrate, wherein an area of dielectric material is formed by hydrolyzing a plurality of precursors to form a hybrid organic inorganic material comprised of a silicon oxide backbone and having an organic substituent bound to the backbone, and depositing the hybrid organic inorganic material on a substrate, removing the hybrid organic-inorganic material in selected areas, and depositing an electrically conductive material in the selected areas, wherein one of the precursors is a compound of the general formula R1R2R3SiR4, wherein R1, R2, R3 are each bound to the Si and are independently an aryl group, a cross linkable group, or an alkyl group having from 1-14 carbons, and wherein R4 is selected from the group consisting of an alkoxy group, an acyloxy group, an —OH group or a halogen. Also disclosed is a method for forming a hybrid organic inorganic layer on a substrate, comprising: hydrolyzing a silane selected from the group consisting of a tetraalkoxysilane, a trialkoxysilane, a trichlorosilane, a dialkoxysilane, and a dichlorosilane, with a compound of the general formula: R1R2R4MR5, wherein R1, R2 and R4 are independently an aryl, alkyl, alkenyl, epoxy or alkynyl group, wherein at least one of R1, R2 and R4 is fully or partially fluorinated, wherein M is selected from group 14 of the periodic table, and wherein R5 is either an alkoxy group, OR3, or a halogen (X).

摘要翻译： 公开了一种用于制造集成电路的方法，其包括将导电材料和混合有机无机介电材料的交替区域沉积在基底上，其中介电材料的区域通过水解多个前体而形成，以形成由 氧化硅主链并具有与主链结合的有机取代基，并将杂化有机无机材料沉积在基材上，去除所选区域中的杂化有机 - 无机材料，以及在选定区域中沉积导电材料，其中 前体是通式为R 1 R 2 R 3 SiR 4的化合物，其中R 1，R 2，R 3各自与Si结合，独立地为芳基，可交联基团或具有1-14个碳原子的烷基，其中R4为 选自烷氧基，酰氧基，-OH基或卤素。 还公开了一种在基材上形成杂化有机无机层的方法，包括：将通式（IV）的化合物与四烷氧基硅烷，三烷氧基硅烷，三氯硅烷，二烷氧基硅烷和二氯硅烷选自下列的硅烷水解： ：R1R2R4MR5，其中R1，R2和R4独立地是芳基，烷基，烯基，环氧基或炔基，其中R1，R2和R4中的至少一个是完全或部分氟化的，其中M选自周期表的第14族 ，其中R 5为烷氧基，OR 3或卤素（X）。

公开(公告)号：US09190616B2

公开(公告)日：2015-11-17

申请号：US14126447

申请日：2012-06-14

申请人： Jyri Paulasaari ,  Juha T. Rantala

发明人： Jyri Paulasaari ,  Juha T. Rantala

IPC分类号： H01L51/00 ,  C07F7/18 ,  C07F7/30 ,  C08G77/392

CPC分类号： H01L51/0036 ,  C07F7/1804 ,  C07F7/30 ,  C08G77/392 ,  H01L51/0074 ,  H01L51/0094

摘要： Synthesis of thianthrene moiety containing silane and germane monomers and their polymerization is presented. The polymers show high refractive index, high transparency and excellent thermal stability. They are useful as dielectric films for semiconductor industry and for optical applications, including high-RI materials in CMOS image sensors.

摘要翻译： 提出了含有硅烷和锗烷单体的噻蒽部分的合成及其聚合。 聚合物显示出高折射率，高透明度和优异的热稳定性。 它们可用作半导体工业和光学应用的介电膜，包括CMOS图像传感器中的高RI材料。

公开(公告)号：US07643717B2

公开(公告)日：2010-01-05

申请号：US10150625

申请日：2002-05-17

申请人： Juha T. Rantala ,  Arto L. T. Maaninen ,  T. Teemu T. Tormanen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

发明人： Juha T. Rantala ,  Arto L. T. Maaninen ,  T. Teemu T. Tormanen ,  Tiina J. Maaninen ,  Jarkko J. Pietikainen

IPC分类号： G02B6/02 ,  H01L21/00

CPC分类号： G02B6/138 ,  G02B6/132 ,  G02B2006/12097

摘要： Waveguides are disclosed (and other devices and materials including but not limited to hybrid organic-inorganic coatings, passivation materials, glob top materials, underfill materials, materials for IC and other applications, microlenses and any of a wide variety of optical devices) that benefit by being formed of a novel hybrid organic-inorganic material. In one embodiment of the invention, a method for making a waveguide includes: forming a lower cladding layer on a substrate; forming a core layer after the lower cladding layer; and forming an upper cladding layer after the core layer; wherein the lower cladding layer, core layer and/or upper cladding layer comprises a hybrid organic-inorganic material—that has many desirable properties relating to stability, hydrophobicity, roughness, optical absorbance, polarization dependent loss, among others.

摘要翻译： 公开了波导（以及其他装置和材料，包括但不限于混合有机 - 无机涂层，钝化材料，球形顶材料，底部填充材料，用于IC和其它应用的材料，微透镜以及各种光学装置中的任何一种） 通过由新型杂化有机 - 无机材料形成。 在本发明的一个实施例中，制造波导的方法包括：在衬底上形成下包层; 在下包层之后形成芯层; 以及在所述芯层之后形成上包层; 其中下包层，芯层和/或上敷层包括杂化有机 - 无机材料，其具有与稳定性，疏水性，粗糙度，光吸收率，偏振相关损耗等有关的许多期望性能。

公开(公告)号：US20110134533A1

公开(公告)日：2011-06-09

申请号：US13058537

申请日：2009-08-11

申请人： Mikael Broman ,  Graeme Gordon ,  Juha T. Rantala

发明人： Mikael Broman ,  Graeme Gordon ,  Juha T. Rantala

IPC分类号： G02B5/02 ,  B05D5/06

CPC分类号： G02B5/0278 ,  G02B5/001 ,  G02B5/021 ,  G02B5/0252 ,  G02B5/1809 ,  G02B5/1847

摘要： An optical light diffuser component and a method of producing the same. The component comprises at least one substrate material with an index of refraction of n1 and at least one optical coating on the substrate with having an index of refraction of n2. The indices n1 and n2 are different. The optical light diffuser component produces uniform and diffuse light pattern from spot like light source, such as LED lamp, in terms of high optical transmission. The optical transmission is better than 90% at the visible spectrum of the light.

摘要翻译： 光学光扩散​​器部件及其制造方法。 该组件包括折射率为n1的至少一种衬底材料和具有n2折射率的衬底上的至少一个光学涂层。 索引n1和n2不同。 在光传输方面，光扩散器部件从点状光源（例如LED灯）产生均匀的漫射光图案。 在光的可见光谱下，光透射率优于90％。

公开(公告)号：US20070284687A1

公开(公告)日：2007-12-13

申请号：US11637961

申请日：2006-12-13

申请人： Juha T. Rantala

发明人： Juha T. Rantala

IPC分类号： H01L31/0232

CPC分类号： H01L27/1462 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14685 ,  H01L27/14687

摘要： A semiconductor device comprising a semiconductor substrate with a plurality of photo-diodes arranged in the semiconductor substrate with interconnect layers defining apertures at the photo-diodes and a first polymer which fills the gaps such as to cover the photo-diode. Further, layers of color filters are arranged on top the gap filling polymer layer opposite to the photo-diodes and a second polymer arranged on the interconnect layers covers and planarizes and passivates the color filter layers. On top of the planarizing polymer there is a plurality of micro-lenses opposite to the color filters, and a third polymer layer is deposited on the micro-lenses for passivating the micro-lenses. According to the invention the polymer materials are comprised of a siloxane polymer which gives thermally and mechanically stable, high index of refraction, dense dielectric films exhibiting high-cracking threshold, low pore volume and pore size.

摘要翻译： 一种半导体器件，包括具有布置在所述半导体衬底中的多个光电二极管的半导体衬底，所述多个光电二极管具有在所述光电二极管处限定孔的互连层和填充所述间隙以覆盖所述光电二极管的第一聚合物。 此外，彩色滤光片层布置在与光电二极管相对的间隙填充聚合物层的顶部，并且布置在互连层上的第二聚合物覆盖并平坦化并钝化滤色器层。 在平坦化聚合物的顶部存在与滤色器相对的多个微透镜，并且在微透镜上沉积第三聚合物层以钝化微透镜。 根据本发明，聚合物材料由提供热和机械稳定的高折射率的硅氧烷聚合物组成，表现出高裂纹阈值，低孔体积和孔径的致密介电膜。