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公开(公告)号：US20090220404A1
公开(公告)日：2009-09-03
申请号：US12463480
申请日：2009-05-11
IPC分类号： C01B21/072
CPC分类号： H01L21/6831 , C04B35/581 , C04B2235/3217 , C04B2235/3865 , C04B2235/723 , C04B2235/96
摘要： An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.
摘要翻译： 提供了一种氮化铝系陶瓷烧结体，其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量％以上至1.0重量％以下的量烧结而形成， 量不大于0.7重量％，其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内，晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。
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2.发明授权公开(公告)号：US07122490B2
公开(公告)日：2006-10-17
申请号：US10785774
申请日：2004-02-24
IPC分类号： C04B35/581 , C04B35/482
CPC分类号： C01B21/0602 , C01B21/072 , C01P2002/54 , C01P2002/72 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/61 , C01P2006/40 , C04B35/581
摘要： A novel aluminum nitride material having a low room temperature volume resistivity is provided. The aluminum nitride material has an aluminum nitride main component and includes at least 0.03 mol % of europium oxide. The aluminum nitride material has an aluminum nitride phase and an europium-aluminum composite oxide phase. An aluminum nitride material also provided having an aluminum nitride main component, wherein a total content of europium oxide and samarium oxide is at least 0.09 mol %. The aluminum nitride material has an aluminum nitride phase and a composite oxide phase containing at least europium and aluminum.
摘要翻译： 提供具有低室温体积电阻率的新型氮化铝材料。 氮化铝材料具有氮化铝主要成分，并且包含至少0.03mol％的氧化铕。 氮化铝材料具有氮化铝相和铕 - 铝复合氧化物相。 还提供了具有氮化铝主要成分的氮化铝材料，其中氧化铕和氧化钐的总含量为至少0.09mol％。 氮化铝材料具有至少含有铕和铝的氮化铝相和复合氧化物相。
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3.发明授权Aluminum nitride-based ceramic sintered body and member for semiconductor manufacturing device 有权氮化铝系陶瓷烧结体及半导体制造装置用部件公开(公告)号：US07553787B2
公开(公告)日：2009-06-30
申请号：US11612016
申请日：2006-12-18
IPC分类号： C04B35/581
CPC分类号： H01L21/6831 , C04B35/581 , C04B2235/3217 , C04B2235/3865 , C04B2235/723 , C04B2235/96
摘要： An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.
摘要翻译： 提供了一种氮化铝系陶瓷烧结体，其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量％以上至1.0重量％以下的量烧结而形成， 量不大于0.7重量％，其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内，晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 在500℃下的氮化铝系陶瓷烧结体的体积电阻率为109Ω·cm以上。
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4.发明申请公开(公告)号：US20070142205A1
公开(公告)日：2007-06-21
申请号：US11612016
申请日：2006-12-18
IPC分类号： C04B35/581
CPC分类号： H01L21/6831 , C04B35/581 , C04B2235/3217 , C04B2235/3865 , C04B2235/723 , C04B2235/96
摘要： 100 g of aluminum nitride (AlN) powder and 2.0 g of aluminum oxide (Al2O3) powder were placed in graphite crucible. Thereafter, the entire crucible was treated with heat by keeping it in a nitrogen atmosphere at a temperature of 2200° C. and a pressure of 1.5 kgf/cm2 for 2 hours. In this manner, aluminum nitride powder was prepared.
摘要翻译： 将100g的氮化铝（AlN）粉末和2.0g氧化铝（Al 2 O 3 O 3）粉末放入石墨坩埚中。 此后，将整个坩埚在2200℃的温度和1.5kgf / cm 2的压力下保持在氮气氛中加热处理2小时。 以这种方式制备氮化铝粉末。
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公开(公告)号：US07763226B2
公开(公告)日：2010-07-27
申请号：US12463480
申请日：2009-05-11
IPC分类号： C01B21/072
CPC分类号： H01L21/6831 , C04B35/581 , C04B2235/3217 , C04B2235/3865 , C04B2235/723 , C04B2235/96
摘要： An aluminum nitride-based ceramic sintered body is provided, which is manufactured by sintering an aluminum nitride powder comprising aluminum nitride as a main component, carbon in an amount of 0.1 wt % or more to 1.0 wt % or less, and containing oxygen in an amount that is not greater than 0.7 wt %, wherein carbon and oxygen are dissolved in grains of the aluminum nitride powder. The a-axis length of the lattice constant of the aluminum nitride is in a range of 3.1120 Å or more to 3.1200 Å or less, and the a c-axis length of the lattice constant is in a range of 4.9810 Å or more to 4.9900 Å or less. The volume resistivity of the aluminum nitride-based ceramic sintered body at 500° C. is 109 Ω·cm or more.
摘要翻译： 提供了一种氮化铝系陶瓷烧结体，其通过以包含氮化铝为主要成分的氮化铝粉末以0.1重量％以上至1.0重量％以下的量烧结而形成， 量不大于0.7重量％，其中碳和氧溶解在氮化铝粉末的颗粒中。 氮化铝的晶格常数的a轴长度在3.1120以上至3.1200以下的范围内，晶格常数的c轴长度在4.98以上至4.9900以上的范围内 Å或更少。 氮化铝系陶瓷烧结体在500℃下的体积电阻率为109Ω·cm·cm以上。
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公开(公告)号：US08236722B2
公开(公告)日：2012-08-07
申请号：US12549524
申请日：2009-08-28
CPC分类号： C04B35/111 , C04B35/62655 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3865 , C04B2235/445 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/96 , H01L21/6833
摘要： An aluminum oxide sintered product including a layer phase containing a rare-earth element and fluorine among grains of aluminum oxide serving as a main component, or a phase containing a rare-earth element and fluorine along edges of grains of aluminum oxide serving as a main component. The product includes a phase containing a rare-earth element and a fluorine element among grains of aluminum oxide, the phase not being in the form of localized dots but in the form of line segments, when viewed in an SEM image. The product can be readily adjusted to have a volume resistivity in the range of 1×1013 to 1×1016 Ω·cm, the volume resistivity being calculated from a current value after the lapse of 1 minute from the application of a voltage of 2 kV/mm to the aluminum oxide sintered product at room temperature.
摘要翻译： 包含作为主要成分的氧化铝的粒子中含有稀土元素和氟的层相的氧化铝烧结体，或者以氧化铝为主体的边缘的含有稀土元素和氟的相 零件。 该产品包括在氧化铝晶粒中含有稀土元素和氟元素的相，当从SEM图像中观察时，该相不是局部点形式，而是以线段的形式。 该产品可以容易地调整为体积电阻率在1×1013至1×1016＆OHgr·cm范围内，体积电阻率是从施加电压2分钟经过1分钟后的电流值计算的 kV / mm至室温下的氧化铝烧结体。
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公开(公告)号：US20100056358A1
公开(公告)日：2010-03-04
申请号：US12549524
申请日：2009-08-28
IPC分类号： C04B35/101
CPC分类号： C04B35/111 , C04B35/62655 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3865 , C04B2235/445 , C04B2235/5436 , C04B2235/5445 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/85 , C04B2235/96 , H01L21/6833
摘要： An aluminum oxide sintered product including a layer phase containing a rare-earth element and fluorine among grains of aluminum oxide serving as a main component, or a phase containing a rare-earth element and fluorine along edges of grains of aluminum oxide serving as a main component. The product includes a phase containing a rare-earth element and a fluorine element among grains of aluminum oxide, the phase not being in the form of localized dots but in the form of line segments, when viewed in an SEM image. The product can be readily adjusted to have a volume resistivity in the range of 1×1013 to 1×1016 Ω·cm, the volume resistivity being calculated from a current value after the lapse of 1 minute from the application of a voltage of 2 kV/mm to the aluminum oxide sintered product at room temperature.
摘要翻译： 包含作为主要成分的氧化铝的粒子中含有稀土元素和氟的层相的氧化铝烧结体，或者以氧化铝为主体的边缘的含有稀土元素和氟的相 零件。 该产品包括在氧化铝晶粒中含有稀土元素和氟元素的相，当从SEM图像中观察时，该相不是局部点形式，而是以线段的形式。 该产品可以容易地调整为体积电阻率在1×1013至1×1016＆OHgr·cm范围内，体积电阻率是从施加电压2分钟经过1分钟后的电流值计算的 kV / mm至室温下的氧化铝烧结体。
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8.发明申请公开(公告)号：US20070215840A1
公开(公告)日：2007-09-20
申请号：US11724049
申请日：2007-03-14
IPC分类号： C04B35/581 , C04B35/00 , H01B1/12
CPC分类号： C04B35/581 , C04B35/44 , C04B35/6261 , C04B35/6262 , C04B35/6268 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3821 , C04B2235/3886 , C04B2235/3895 , C04B2235/5436 , C04B2235/604 , C04B2235/652 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/721 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in the grain boundaries of aluminum nitride (AlN) particles, thereby reducing temperature dependency of volume resistivity of AlN sintered body; at the same time, the solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving in AlN particles, thereby maintaining the volume resistivity within AlN particles at a high value even at a high temperature.
摘要翻译： 由（Sm，Ce）Al 11 O 18形成的导电通道在氮化铝（AlN）颗粒的晶界处相互连接，从而降低体积电阻率的温度依赖性 的AlN烧结体; 同时，AlN颗粒的固溶体由C和Mg中的至少一种形成，以防止导电通道在AlN颗粒中移动，从而即使在高的AlN颗粒中也保持AlN颗粒内的体积电阻率高值 温度。
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9.发明授权Aluminum nitride sintered body, semiconductor manufacturing device and method of manufacturing 有权氮化铝烧结体，半导体制造装置及其制造方法公开(公告)号：US07629282B2
公开(公告)日：2009-12-08
申请号：US11724049
申请日：2007-03-14
IPC分类号： C04B35/581
CPC分类号： C04B35/581 , C04B35/44 , C04B35/6261 , C04B35/6262 , C04B35/6268 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3229 , C04B2235/3821 , C04B2235/3886 , C04B2235/3895 , C04B2235/5436 , C04B2235/604 , C04B2235/652 , C04B2235/656 , C04B2235/658 , C04B2235/6581 , C04B2235/721 , C04B2235/80 , C04B2235/85 , C04B2235/96 , C04B2235/9607
摘要： A conductive channel formed of an (Sm, Ce)Al11O18 is interconnected in grain boundaries of aluminum nitride (AlN) particles, thereby reducing the temperature dependency of the volume resistivity of an AlN sintered body formed therefrom. At the same time, a solid solution of the AlN particles is formed with at least one of C and Mg, to prevent the conductive channel from moving into the AlN particles, thereby maintaining a high volume resistivity within the AlN particles even at a high temperature.
摘要翻译： 由（Sm，Ce）Al 11 O 18形成的导电沟道在氮化铝（AlN）颗粒的晶界处相互连接，从而降低了由其形成的AlN烧结体的体积电阻率的温度依赖性。 同时，用C和Mg中的至少一种形成AlN颗粒的固溶体，以防止导电通道移动到AlN颗粒中，从而即使在高温下也保持AlN颗粒内的高体积电阻率 。
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公开(公告)号：US09244443B2
公开(公告)日：2016-01-26
申请号：US13878740
申请日：2011-09-05
申请人： Yoshimasa Kobayashi
发明人： Yoshimasa Kobayashi
摘要： The object is to maintain the operations of a logistic system. The recovering method of the logistic system includes a plurality of controllers connected with each other via a local network. A recovery method for the logistic system comprises detecting an abnormal state of the plurality of controllers, outputting a switching requesting signal, receiving a control signal, and outputting the control signal. In outputting the switching requesting signal, when an abnormal controller that shows the abnormal state is detected, a switching requesting signal to switch from the abnormal controller to an alternate controller is outputted from the logistic system to the alternate controller. In receiving the control signal, a control signal that controls at least a part of operations of the logistic system instead of the abnormal controller is received from the alternate controller.
摘要翻译： 目的是维护后勤系统的运作。 物流系统的恢复方法包括通过本地网络彼此连接的多个控制器。 用于物流系统的恢复方法包括检测多个控制器的异常状态，输出切换请求信号，接收控制信号并输出控制信号。 在输出切换请求信号时，当检测到显示异常状态的异常控制器时，将从异常控制器切换到备用控制器的切换请求信号从物流系统输出到备用控制器。 在接收到控制信号时，从备用控制器接收到控制逻辑系统的操作的至少一部分而不是异常控制器的控制信号。
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