公开(公告)号：US06903500B2

公开(公告)日：2005-06-07

申请号：US10337858

申请日：2003-01-08

申请人： Tae-won Jeong ,  Ji-beom Yoo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Chang-soo Lee ,  Jung-na Heo

发明人： Tae-won Jeong ,  Ji-beom Yoo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Chang-soo Lee ,  Jung-na Heo

IPC分类号： H01J65/00 ,  H01J1/30 ,  H01J1/304 ,  H01J61/44 ,  H01J19/24

CPC分类号： B82Y10/00 ,  H01J1/304 ,  Y10S977/745

摘要： A field emitter device including carbon nanotubes each of which has a protective membrane is provided. The protective membrane is formed of a nitride, a carbide, or an oxide. Suitable nitrides for the protective membrane include boron nitride, aluminum nitride, boron carbon nitride, and gallium nitride. The protective membrane protects the carbon nanotubes from damage due to arcing or an unnecessary remaining gas and thus improves field emission characteristics and stability of the field emitter device.

摘要翻译： 提供了包括各自具有保护膜的碳纳米管的场发射器件。 保护膜由氮化物，碳化物或氧化物形成。 用于保护膜的合适的氮化物包括氮化硼，氮化铝，氮化硼和氮化镓。 保护膜保护碳纳米管免受由于电弧或不必要的剩余气体的损害，从而提高场发射器件的场发射特性和稳定性。

公开(公告)号：US07025652B2

公开(公告)日：2006-04-11

申请号：US11049898

申请日：2005-02-04

申请人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

发明人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

IPC分类号： H01J43/04 ,  H01J9/12

CPC分类号： B82Y10/00 ,  H01J43/243 ,  H01J43/246 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

摘要： An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

公开(公告)号：US20050200254A1

公开(公告)日：2005-09-15

申请号：US11049898

申请日：2005-02-04

申请人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

发明人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

IPC分类号： H01J9/12 ,  H01J1/32 ,  H01J43/04 ,  H01J43/24 ,  H01J43/00

CPC分类号： B82Y10/00 ,  H01J43/243 ,  H01J43/246 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

摘要： An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

公开(公告)号：US06870308B2

公开(公告)日：2005-03-22

申请号：US10368466

申请日：2003-02-20

申请人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

发明人： Jung-na Heo ,  Whi-kun Yi ,  Jeong-hee Lee ,  Se-gi Yu ,  Tae-won Jeong ,  Chang-soo Lee

IPC分类号： H01J9/12 ,  H01J1/32 ,  H01J43/04 ,  H01J43/24 ,  H01J43/00 ,  H01J43/10

CPC分类号： B82Y10/00 ,  H01J43/243 ,  H01J43/246 ,  H01J2201/30469 ,  Y10S977/932 ,  Y10S977/939

摘要： An electron amplifier and a method of manufacturing the same are provided. The electron amplifier includes a substrate in which a plurality of through holes are formed, a resistive layer deposited on the sidewalls of the through holes, an electron emissive layer including carbon nanotubes which is deposited on the resistive layer, and an electrode layer formed on each of the upper and lower sides of the substrate. Because the electron emissive layer of the electron amplifier is uniform and provides a high electron emission efficiency, the electron amplification efficiency is improved. The electron amplifier manufacturing method enables economical mass production of electron amplifiers.

摘要翻译： 提供一种电子放大器及其制造方法。 电子放大器包括其中形成有多个通孔的基板，沉积在通孔的侧壁上的电阻层，包括沉积在电阻层上的碳纳米管的电子发射层和形成在每个上的电极层 的基板的上侧和下侧。 由于电子放大器的电子发射层是均匀的并且提供高的电子发射效率，所以提高了电子放大效率。 电子放大器制造方法能够经济地批量生产电子放大器。

公开(公告)号：US07078007B2

公开(公告)日：2006-07-18

申请号：US10353936

申请日：2003-01-30

申请人： Se-gi Yu ,  Whi-kun Yi ,  Jeong-hee Lee ,  Yong-wan Jin ,  Tae-won Jeong

发明人： Se-gi Yu ,  Whi-kun Yi ,  Jeong-hee Lee ,  Yong-wan Jin ,  Tae-won Jeong

IPC分类号： D01F9/12

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  Y10S977/742 ,  Y10T428/2982

摘要： A carbon nanotube manufacturing method is provided. In the carbon nanotube manufacturing method, carbon nanoparticles are dispersed in a strong acid solution and heated at a predetermined temperature under reflux to form carbon nanotubes from the carbon nanoparticles. The carbon nanotubes can be simply produced on a mass-scale at low costs by using the strong acid solution.

公开(公告)号：US5900163A

公开(公告)日：1999-05-04

申请号：US784958

申请日：1997-01-16

申请人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

发明人： Whi-kun Yi ,  Dai-sik Moon ,  Sung-kyeong Kim ,  Kyung-hoon Kim ,  Gyu-hwan Kwag

IPC分类号： C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/3213 ,  B44C1/22

CPC分类号： H01L21/32137

摘要： A method for etching a layer of a microelectronic structure includes the steps of masking the layer to be etched so that predetermined portions of the layer are exposed, and providing an etching gas. An additional gas is also provided wherein the additional gas generates a compound having a carbene structure when exposed to a plasma discharge. A plasma of the etching gas and the additional gas is generated to thereby etch the exposed portions of the layer and to form the compound having a carbene structure. A polymer can thus be formed from the compound having the carbene structure on the sidewalls of the etched portions of the layer. Accordingly, the profile of the etched layer can be improved.

摘要翻译： 用于蚀刻微电子结构层的方法包括以下步骤：掩蔽待蚀刻的层，使得层的预定部分暴露，并提供蚀刻气体。 还提供另外的气体，其中附加气体当暴露于等离子体放电时产生具有卡宾结构的化合物。 产生蚀刻气体和附加气体的等离子体，从而蚀刻该层的暴露部分并形成具有卡宾结构的化合物。 因此，可以在层的蚀刻部分的侧壁上由具有卡宾结构的化合物形成聚合物。 因此，可以提高蚀刻层的轮廓。