MAGNETIC RECORDING MEDIUM
    1.
    发明申请
    MAGNETIC RECORDING MEDIUM 审中-公开
    磁记录介质

    公开(公告)号:US20110020669A1

    公开(公告)日:2011-01-27

    申请号:US12840374

    申请日:2010-07-21

    IPC分类号: G11B5/706 G11B5/62 G11B5/73

    摘要: A magnetic recording medium having excellent stability of recorded magnetic signals and capable of recording magnetic signals by a thermally assisted magnetic recording system in which a magnetic recording layer of the magnetic recording medium contains ferromagnetic crystal grains of a Co—Ni—Pt alloy with a Pt content of 44 at % or more and 55 at % or less and with an atom content ratio: Ni/(Co+Ni) of 0.64 or more and 0.8 or less. The magnetic recording medium has extremely excellent stability of recorded magnetic signals since the Co—Ni—Pt alloy constituting the magnetic recording layer has an extremely high anisotropy field at a normal temperature. Further, the magnetic recording medium can perform signal recording based on the thermally assisted magnetic recording system since the Co—Ni—Pt alloy constituting the magnetic recording layer has a Curie point within an appropriate temperature range.

    摘要翻译: 一种磁记录介质,其具有良好的记录磁信号的稳定性并且能够通过热辅助磁记录系统记录磁信号,其中磁记录介质的磁记录层包含Co-Ni-Pt合金的铁磁晶粒与Pt 含量为44原子%以上且55原子%以下,原子含量比:Ni /(Co + Ni)为0.64以上且0.8以下。 由于构成磁记录层的Co-Ni-Pt合金在常温下具有极高的各向异性场,所以磁记录介质具有非常优异的记录磁信号的稳定性。 此外,由于构成磁记录层的Co-Ni-Pt合金在适当的温度范围内具有居里点,所以磁记录介质可以基于热辅助磁记录系统执行信号记录。

    Magnetic thin film and method for forming the film, and magnetic thin film-applied device
    2.
    发明授权
    Magnetic thin film and method for forming the film, and magnetic thin film-applied device 有权
    磁性薄膜和薄膜形成方法以及磁性薄膜施加装置

    公开(公告)号:US08076012B2

    公开(公告)日:2011-12-13

    申请号:US12510878

    申请日:2009-07-28

    IPC分类号: G11B5/65

    摘要: Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.

    摘要翻译: 公开了能够提供高的单轴磁各向异性Ku的磁性薄膜,同时抑制其饱和磁化强度Ms,以及形成膜的方法; 并且还公开了施加磁性薄膜的各种装置。 磁性薄膜包括具有L11型有序结构的Co-M-Pt合金(其中M表示除了Co和Pt之外的一种或多种金属元素)。 例如,Co-M-Pt合金是Co-Ni-Pt合金,其组成包含10至35at。 Co的百分比,从20到55。 Ni的百分比和Pt的余量。 磁性薄膜适用于垂直磁记录介质,隧道磁阻(TMR)器件,磁阻随机存取存储器(MRAM),微机电系统(MEMS)器件等。