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    MAGNETIC RECORDING MEDIUM
    1.
    发明申请
    MAGNETIC RECORDING MEDIUM 审中-公开
    磁记录介质

    公开(公告)号：US20110020669A1

    公开(公告)日：2011-01-27

    申请号：US12840374

    申请日：2010-07-21

    申请人： Junichi SAYAMA ,  Hiroaki Nemoto ,  Hiroshi Ide ,  Hiroyasu Kataoka ,  Nobuyukl Takahashi ,  Takehito Shimatsu ,  Osamu Kitakami ,  Satoshi Okamoto ,  Hajime Aoi

    发明人： Junichi SAYAMA ,  Hiroaki Nemoto ,  Hiroshi Ide ,  Hiroyasu Kataoka ,  Nobuyukl Takahashi ,  Takehito Shimatsu ,  Osamu Kitakami ,  Satoshi Okamoto ,  Hajime Aoi

    IPC分类号： G11B5/706 ,  G11B5/62 ,  G11B5/73

    CPC分类号： G11B5/656 ,  G11B5/65 ,  G11B5/7315 ,  G11B5/7325

    摘要： A magnetic recording medium having excellent stability of recorded magnetic signals and capable of recording magnetic signals by a thermally assisted magnetic recording system in which a magnetic recording layer of the magnetic recording medium contains ferromagnetic crystal grains of a Co—Ni—Pt alloy with a Pt content of 44 at % or more and 55 at % or less and with an atom content ratio: Ni/(Co+Ni) of 0.64 or more and 0.8 or less. The magnetic recording medium has extremely excellent stability of recorded magnetic signals since the Co—Ni—Pt alloy constituting the magnetic recording layer has an extremely high anisotropy field at a normal temperature. Further, the magnetic recording medium can perform signal recording based on the thermally assisted magnetic recording system since the Co—Ni—Pt alloy constituting the magnetic recording layer has a Curie point within an appropriate temperature range.

    摘要翻译： 一种磁记录介质，其具有良好的记录磁信号的稳定性并且能够通过热辅助磁记录系统记录磁信号，其中磁记录介质的磁记录层包含Co-Ni-Pt合金的铁磁晶粒与Pt 含量为44原子％以上且55原子％以下，原子含量比：Ni /（Co + Ni）为0.64以上且0.8以下。 由于构成磁记录层的Co-Ni-Pt合金在常温下具有极高的各向异性场，所以磁记录介质具有非常优异的记录磁信号的稳定性。 此外，由于构成磁记录层的Co-Ni-Pt合金在适当的温度范围内具有居里点，所以磁记录介质可以基于热辅助磁记录系统执行信号记录。

    Magnetic thin film and method for forming the film, and magnetic thin film-applied device
    2.
    发明授权
    Magnetic thin film and method for forming the film, and magnetic thin film-applied device 有权
    磁性薄膜和薄膜形成方法以及磁性薄膜施加装置

    公开(公告)号：US08076012B2

    公开(公告)日：2011-12-13

    申请号：US12510878

    申请日：2009-07-28

    申请人： Takehito Shimatsu ,  Hideo Sato ,  Osamu Kitakami ,  Satoshi Okamoto ,  Hajime Aoi ,  Hiroyasu Kataoka

    发明人： Takehito Shimatsu ,  Hideo Sato ,  Osamu Kitakami ,  Satoshi Okamoto ,  Hajime Aoi ,  Hiroyasu Kataoka

    IPC分类号： G11B5/65

    CPC分类号： G11B5/656 ,  B82Y25/00 ,  G11B5/65 ,  G11B5/82 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3286 ,  H01F41/18 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/115 ,  Y10T428/32

    摘要： Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.

    摘要翻译： 公开了能够提供高的单轴磁各向异性Ku的磁性薄膜，同时抑制其饱和磁化强度Ms，以及形成膜的方法; 并且还公开了施加磁性薄膜的各种装置。 磁性薄膜包括具有L11型有序结构的Co-M-Pt合金（其中M表示除了Co和Pt之外的一种或多种金属元素）。 例如，Co-M-Pt合金是Co-Ni-Pt合金，其组成包含10至35at。 Co的百分比，从20到55。 Ni的百分比和Pt的余量。 磁性薄膜适用于垂直磁记录介质，隧道磁阻（TMR）器件，磁阻随机存取存储器（MRAM），微机电系统（MEMS）器件等。

    Perpendicular magnetic recording medium
    4.
    发明申请
    Perpendicular magnetic recording medium 有权
    垂直磁记录介质

    公开(公告)号：US20050181237A1

    公开(公告)日：2005-08-18

    申请号：US11032691

    申请日：2005-01-10

    申请人： Osamu Kitakami ,  Yutaka Shimada ,  Satoshi Okamoto ,  Takehito Shimatsu ,  Hajime Aoi ,  Hiroaki Muraoka ,  Yoshihisa Nakamura ,  Hiroyuki Uwazumi ,  Tadaaki Oikawa

    发明人： Osamu Kitakami ,  Yutaka Shimada ,  Satoshi Okamoto ,  Takehito Shimatsu ,  Hajime Aoi ,  Hiroaki Muraoka ,  Yoshihisa Nakamura ,  Hiroyuki Uwazumi ,  Tadaaki Oikawa

    IPC分类号： G11B5/64 ,  G11B5/66

    CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/656

    摘要： There is provided a perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substratel, and at least a nonmagnetic underlayer 2, a magnetic recording layer 3 and a protective layer 4 formed in this order on the nonmagnetic substrate 1, the magnetic recording layer 3 comprises a low Ku region 31 layer having a perpendicular magnetic anisotropy constant (Ku value) of not more than 1×105 erg/cm3, and a high Ku region 32 layer having a Ku value of at least 1×106 erg/cm3. Moreover, the magnetic recording layer 3 is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.

    摘要翻译： 提供了一种垂直磁记录介质，根据该磁记录介质，磁化的热稳定性都很好，并且用磁头进行写入容易，此外SNR提高。 在包括非磁性基底层的至少一个非磁性底层2，磁记录层3和保护层4的垂直磁记录介质的情况下，磁记录层3包括低磁性层 具有不大于1×10 5 erg / cm 3的垂直磁各向异性常数（K u值）的K u区域31层 和具有至少1×10 6个/ cm 2以上的K值的高K区域32层， 3 。 此外，使磁记录层3具有包含非磁性氧化物的非磁性晶界，并且将由铁磁性金属制成的晶粒彼此磁分离。

    Perpendicular magnetic recording medium
    5.
    发明授权
    Perpendicular magnetic recording medium 有权
    垂直磁记录介质

    公开(公告)号：US08323808B2

    公开(公告)日：2012-12-04

    申请号：US11032691

    申请日：2005-01-10

    申请人： Osamu Kitakami ,  Yutaka Shimada ,  Satoshi Okamoto ,  Takehito Shimatsu ,  Hajime Aoi ,  Hiroaki Muraoka ,  Yoshihisa Nakamura ,  Hiroyuki Uwazumi ,  Tadaaki Oikawa

    发明人： Osamu Kitakami ,  Yutaka Shimada ,  Satoshi Okamoto ,  Takehito Shimatsu ,  Hajime Aoi ,  Hiroaki Muraoka ,  Yoshihisa Nakamura ,  Hiroyuki Uwazumi ,  Tadaaki Oikawa

    IPC分类号： G11B5/66

    CPC分类号： G11B5/66 ,  G11B5/65 ,  G11B5/656

    摘要： There is provided a perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate 1, and at least a nonmagnetic underlayer 2, a magnetic recording layer 3 and a protective layer 4 formed in this order on the nonmagnetic substrate 1, the magnetic recording layer 3 comprises a low Ku region 31 layer having a perpendicular magnetic anisotropy constant (Ku value) of not more than 1×105 erg/cm3, and a high Ku region 32 layer having a Ku value of at least 1×106 erg/cm3. Moreover, the magnetic recording layer 3 is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.

    摘要翻译： 提供了一种垂直磁记录介质，根据该磁记录介质，磁化的热稳定性都很好，并且用磁头进行写入容易，此外SNR提高。 在包括非磁性基板1和至少一个非磁性底层2，在非磁性基板1上依次形成的磁记录层3和保护层4的垂直磁记录介质的情况下，磁记录层3包括 具有不大于1×105erg / cm3的垂直磁各向异性常数（Ku值）的低Ku区31层和Ku值至少为1×106erg / cm3的高Ku区32层。 此外，使磁记录层3具有包含非磁性氧化物的非磁性晶界，并且将由铁磁性金属制成的晶粒彼此磁分离。

    Method for fabricating a magnetic recording medium
    6.
    发明授权
    Method for fabricating a magnetic recording medium 失效
    磁记录介质的制造方法

    公开(公告)号：US06623789B2

    公开(公告)日：2003-09-23

    申请号：US10178592

    申请日：2002-06-25

    申请人： Yutaka Shimada ,  Osamu Kitakami ,  Satoshi Okamoto ,  Tomoaki Sakurai

    发明人： Yutaka Shimada ,  Osamu Kitakami ,  Satoshi Okamoto ,  Tomoaki Sakurai

    IPC分类号： B05D512

    CPC分类号： G11B5/84

    摘要： A first thin film including at least one transition metal selected from the group consisting of Co, Fe and Ni, and a second thin film including at least one platinum group element selected from the group consisting of Pt and Pd are prepared. Then, a multilayered structure where said first thin film and said second thin film are stacked is formed. Then, the multilayered structure is heated at the same time or after the formation of said multilayered structure, thereby to counter-diffuse constituent elements of said first thin film and said second thin film and alloy said at least one transition metal and said platinum group element.

    摘要翻译： 制备包含选自Co，Fe和Ni中的至少一种过渡金属的第一薄膜和包含选自Pt和Pd中的至少一种铂族元素的第二薄膜。 然后，形成层叠有第一薄膜和第二薄膜的多层结构体。 然后，多层结构在形成所述多层结构之后同时被加热，从而使所述第一薄膜和所述第二薄膜的构成元件反向扩散，并将所述至少一种过渡金属和所述铂族元素 。

    METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE
    8.
    发明申请
    METHOD FOR PRODUCING BACK ELECTRODE TYPE, SOLAR CELL, BACK ELECTRODE TYPE SOLAR CELL AND BACK ELECTRODE TYPE SOLAR CELL MODULE 审中-公开
    背电极型，太阳能电池，背电极型太阳能电池和背电极型太阳能电池模块的制造方法

    公开(公告)号：US20120325291A1

    公开(公告)日：2012-12-27

    申请号：US13576247

    申请日：2011-01-27

    申请人： Yuji Yokosawa ,  Yasushi Funakoshi ,  Satoshi Okamoto ,  Takahisa Kurahashi

    发明人： Yuji Yokosawa ,  Yasushi Funakoshi ,  Satoshi Okamoto ,  Takahisa Kurahashi

    IPC分类号： H01L31/0224 ,  H01L31/18 ,  H01L31/048

    CPC分类号： H01L31/02168 ,  H01L31/0288 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for producing a back electrode type solar cell including the steps of forming a light-receiving surface diffusion layer and an anti-reflection film by applying, to a light-receiving surface of a silicon substrate, a solution containing a compound containing an impurity identical in conductivity type to the silicon substrate, a titanium alkoxide, and an alcohol, followed by heat treatment, and forming a light-receiving surface passivation film on the light-receiving surface of the silicon substrate by heat treatment; a back electrode type solar cell including a light-receiving surface diffusion layer, and an anti-reflection film on the light-receiving surface diffusion layer, made of titanium oxide containing an impurity identical in conductivity type to a silicon substrate; and a back electrode type solar cell module including the back electrode type solar cells.

    摘要翻译： 一种背电极型太阳能电池的制造方法，其特征在于，具有以下工序：在所述硅基板的受光面上涂布含有杂质的溶液的溶液，形成受光面扩散层和防反射膜 导电类型与硅衬底，钛醇盐和醇相同，随后热处理，并且通过热处理在硅衬底的光接收表面上形成光接收表面钝化膜; 背光电极型太阳能电池，其包含受光面扩散层和在受光面扩散层上的防反射膜，所述防反射膜由含有与硅衬底导电类型相同的杂质的钛氧化物构成; 以及包括背面电极型太阳能电池的背面电极型太阳能电池模块。

    PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE
    10.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT ASSEMBLY AND PHOTOELECTRIC CONVERSION MODULE 有权
    光电转换元件，光电转换元件组件和光电转换模块

    公开(公告)号：US20110057283A1

    公开(公告)日：2011-03-10

    申请号：US12674967

    申请日：2008-07-25

    申请人： Akiko Tsunemi ,  Satoshi Okamoto

    发明人： Akiko Tsunemi ,  Satoshi Okamoto

    IPC分类号： H01L31/042 ,  H01L31/04

    CPC分类号： H01L31/022425 ,  H01L31/02245 ,  H01L31/068 ,  Y02E10/547

    摘要： To provide a photoelectric conversion element that allows connection between adjacent photoelectric conversion elements by use of an inexpensive wiring member.A photoelectric conversion element of the present invention comprises: a first semiconductor layer of a first conductivity type; a first electrode arranged on the back side of the first semiconductor layer and electrically connected to the first semiconductor layer; a second semiconductor layer of a second conductivity type, the second semiconductor layer brought into contact with the first semiconductor layer and arranged at least in part on the light-receiving side of the first semiconductor layer; a light-receiving face-side electrode provided so as to be electrically connected to the second semiconductor layer on its light-receiving side; a second electrode arranged on the back side of the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connected to the second semiconductor layer; and a penetrating-connecting section penetrating the first semiconductor layer, and electrically separated from the first semiconductor layer, but electrically connecting the light-receiving face-side electrode with the second electrode, wherein the photoelectric conversion element is characterized in that the first electrode and the second electrode are arranged equidistantly apart from a central axis passing through a center of the photoelectric conversion element.

    摘要翻译： 提供一种光电转换元件，其允许通过廉价的布线构件连接相邻的光电转换元件。 本发明的光电转换元件包括：第一导电类型的第一半导体层; 布置在所述第一半导体层的背侧并电连接到所述第一半导体层的第一电极; 第二导电类型的第二半导体层，第二半导体层与第一半导体层接触并且至少部分地布置在第一半导体层的光接收侧上; 光接收面侧电极，被设置为与其受光侧的第二半导体层电连接; 布置在所述第一半导体层的背面上并与所述第一半导体层电分离但电连接到所述第二半导体层的第二电极; 以及穿透所述第一半导体层的穿透连接部，与所述第一半导体层电分离，但是将所述受光面侧电极与所述第二电极电连接，所述光电转换元件的特征在于，所述第一电极和 第二电极与通过光电转换元件的中心的中心轴线等距离设置。