摘要:
There has been a problem in that kinds of conventional light-emitting materials are not sufficient; therefore, choices of materials and manufacturers of light emitting materials are limited, resulting in an expensive light-emitting device. The present invention provides a novel method for manufacturing a light-emitting material suitable for mass production that can be manufactured at a low cost, and a novel light-emitting material which can provide light emission with high intensity. A mixture in which CuAlS2 is added in a small amount into ZnS as a base material is put in a reaction container. Then, the reaction container is hermetically sealed and the mixture is baked. Note that the reaction container is preferably hermetically sealed in a state where a reduced pressure is held in the reaction container. Further, in a light-emitting element using a light-emitting material obtained, electroluminescence with high luminance can be obtained.
摘要翻译:存在这种常规发光材料种类不足的问题。 因此,发光材料的材料和制造商的选择受到限制,导致昂贵的发光装置。 本发明提供了可以低成本制造适合于批量生产的发光材料的新型制造方法,以及能够提供高强度发光的新颖的发光材料。 将CuAlS 2 O 3少量添加到作为基材的ZnS中的混合物放入反应容器中。 然后,将反应容器密封并将混合物烘烤。 注意,反应容器优选在反应容器中保持减压的状态下气密密封。 此外,在使用得到的发光材料的发光元件中,可以获得高亮度的电致发光。
摘要:
It is an object of the present invention to provide a light-emitting material with high light emission intensity. It is another object to provide a light-emitting element with high light emission efficiency. Moreover, it is another object to provide a light-emitting device and an electronic appliance with reduced power consumption. A light-emitting material contains at least a light-emitting substance, a base material, and an additive which is an element belonging to group 14 of the periodic table or a compound containing two or more kinds of elements belonging to group 14, or a compound containing at least two or more kinds of elements each belonging to a different group chosen from group 13, group 14, and group 15. Due to the light-emitting material, a light-emitting element and an electronic appliance which has high light emission efficiency and can be driven at a low voltage can be obtained.
摘要:
It is an object of the present invention to provide a light emitting element which can be driven at a low voltage. Other objects of the present invention are to provide a light emitting element with a high luminescent efficiency; a light emitting element with a high luminance; a light emitting element having long-life luminescence; a light emitting element and an electronic device having reduced power consumption; and a light emitting element and an electronic device which can be manufactured at low cost. The light emitting element has a light emitting layer and a barrier layer between a first electrode and a second electrode, the light emitting layer contains a base material and an impurity element, and the barrier layer is provided so as to be in contact with the first electrode. Light emission is obtained when a voltage is applied such that a potential of the second electrode becomes higher than a potential of the first electrode.
摘要:
A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC2, referred to as a ‘chalcopyrite’ (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.
摘要:
An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译:目的是提供一种新颖的发光材料。 另一个目的是提供一种降低功耗的发光器件和电子器件。 另一个目的是提供一种可以以低成本制造的发光器件和电子器件。 提供了包括基材,第一杂质元素,第二杂质元素和第三杂质元素的发光元件。 基材是ZnS,CdS,CaS,Y 2 S 3,Ga 2 S 3, SrS,BaS,ZnO,Y 2 O 3,AlN,GaN,InN,ZnSe,ZnTe和SrGa 2 S 4 SUB> 第一杂质元素是Cu,Ag,Au,Pt和Si中的任一种; 第二杂质元素是F,Cl,Br,I,B,Al,Ga,In和Tl中的任一种; 并且第三杂质元素是Li,Na,K,Rb,Cs,N,P,As,Sb和Bi中的任一种。
摘要:
An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.
摘要:
It is an object of the present invention to provide a new light-emitting element and manufacturing method thereof in which actively diffusing a material into a film formation layer is utilized where an interface state and interdiffusion between a compound semiconductor substrate and a film formation layer formed thereover are not considered to be problematic. According to one feature of the present invention, unevenness is formed over the surface of a compound semiconductor substrate through chemical treatment, a compound semiconductor layer is formed over the surface of the compound semiconductor substrate having unevenness, atoms of the compound semiconductor substrate are diffused into the compound semiconductor layer through heat treatment, a first conductive layer is formed over the compound semiconductor substrate, and a second conductive layer is formed over the compound semiconductor layer.
摘要:
It is an object to provide a light emitting element capable of low-voltage driving; with high luminous efficiency; with high emission luminance; and with long emission lifetime. It is another object to provide a light emitting device and an electronic appliance in which power consumption is reduced; and which can be manufactured at low cost. A light emitting element is provided, including a light emitting layer and a layer including a composite material between a first electrode and a second electrode, where the light emitting layer includes a base material and an impurity element, the layer including the composite material includes an organic compound and an inorganic compound, the layer including the composite material is provided to be in contact with the second electrode, and light emission is obtained by application of a voltage so that an electric potential of the second electrode is higher than that of the first electrode.
摘要:
The present invention provides a light emitting material having high electric conductivity, and further a light emitting element which can be driven at low voltage. Light emitting devices and electronic devices with reduced power consumption can also be provided. A light emitting element including a light emitting material is provided in which a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104 and a second electrode 105 are provided over a first electrode 101, the light emitting layer 103 includes an inorganic compound that is any of a sulfide, a nitride and an oxide as a base material; at least one element selected from the group consisting of copper, silver, aluminum, fluorine and chlorine, as a luminescent center material; manganese; and either gallium phosphide or gallium antimonide.
摘要:
A light emitting element is provided, which comprises a pair of electrodes, a p-type semiconductor layer, and an n-type semiconductor layer. The p-type semiconductor layer and the n-type semiconductor layer are interposed between the pair of electrodes. The p-type semiconductor layer includes a first sulfide, and the n-type semiconductor layer includes a second sulfide. At least one of the p-type semiconductor layer and the n-type semiconductor layer includes a light emitting center.