HYBRID PHOTONIC RING MODULATORS
    1.
    发明申请

    公开(公告)号:US20220107542A1

    公开(公告)日:2022-04-07

    申请号:US17065118

    申请日:2020-10-07

    Abstract: Photonic ring modulators with high tuning efficiency and small footprint can be formed in a hybrid material platform from a silicon bus waveguide vertically coupled to an optically active compound semiconductor (e.g., III-V) ring resonator. The performance of the modulator, e.g., in terms of the tuning efficiency and the maximum insertion loss, may be optimized by suitable levels of an applied bias voltage and a heater power of a heater optionally included in the ring modulator. The disclosed hybrid photonic ring modulators may be used, e.g., in photonic transceiver circuits with high lane count.

    OPTICAL TEMPERATURE MEASUREMENTS IN PHOTONIC CIRCUITS

    公开(公告)号:US20220107229A1

    公开(公告)日:2022-04-07

    申请号:US17062885

    申请日:2020-10-05

    Abstract: Temperature measurements of photonic circuit components may be performed optically, exploiting a temperature-dependent spectral property of the photonic device to be monitored itself, or of a separate optical temperature sensor placed in its vicinity. By facilitating measurements of the temperature of the individual photonic devices rather than merely the photonic circuit at large, such optical temperature measurements can provide more accurate temperature information and help improve thermal design.

    INTEGRATED BANDGAP TEMPERATURE SENSOR

    公开(公告)号:US20210405291A1

    公开(公告)日:2021-12-30

    申请号:US16916781

    申请日:2020-06-30

    Abstract: Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.

    ELECTRO-ABSORPTION MODULATOR WITH IMPROVED PHOTOCURRENT UNIFORMITY

    公开(公告)号:US20250070533A1

    公开(公告)日:2025-02-27

    申请号:US18946337

    申请日:2024-11-13

    Inventor: John Parker

    Abstract: Disclosed are integrated electro-absorption modulators (EAM) that are structured and/or operated to improve uniformity of the photocurrent density along the active region. In various embodiments, this improvement results from increased optical absorption at the rear of the EAM, e.g., as achieved by heating a region at the rear, increasing a bias voltage applied across the EAM towards the rear, or changing a material composition of an intrinsic layer towards the rear. In another embodiment, the improvement is achieved by coupling light from a waveguide into the EAM active region continuously along a length of the EAM, using overlap between a tapered section of the waveguide and the EAM.

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