公开(公告)号：US20190319016A1

公开(公告)日：2019-10-17

申请号：US16442727

申请日：2019-06-17

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： JING-QIONG ZHANG ,  TSUNG-CHIEH LIN

IPC: H01L25/075 ,  H01L33/62 ,  H01L33/50 ,  H01L33/52

Abstract: An LED package structure includes a substrate and a light-emitting array. The substrate has a die bond area, and the light-emitting array is disposed in the die bond area. Each first light-emitting unit of the light-emitting array includes a first light-emitting chip and a first wavelength conversion layer of the light-emitting chip, each second light-emitting unit of the light-emitting array includes a second light-emitting chip and a second wavelength conversion layer covering the second light-emitting chip. A first light beam includes a first emission light generated by exciting the first wavelength conversion layer, and the second light beam includes a second emission light generated by exciting the second wavelength conversion layer, and the difference between the first and second emission light peak wavelengths is at least 30 nm.

公开(公告)号：US20210234065A1

公开(公告)日：2021-07-29

申请号：US16629367

申请日：2019-11-12

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： BEN-JIE FAN ,  JING-QIONG ZHANG ,  YI-QUN LI ,  HUNG-CHIH YANG ,  TSUNG-CHIEH LIN ,  HO-CHIEN CHEN ,  SHUEN-TA TENG ,  CHENG-CHANG HSIEH

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/50 ,  H01L33/32

Abstract: A light-emitting diode is provided. The light-emitting diode includes a multiple quantum well structure to generate a light beam with a broadband blue spectrum. The light beam contains a first sub-light beam with a first wavelength and a second sub-light beam with a second wavelength. A difference between the first wavelength and the second wavelength ranges from 1 nm to 50 nm, and the light-emitting diode has a Wall-Plug-Efficiency (WPE) of greater than 0.45 under an operating current density of 120 mA/mm2.

公开(公告)号：US20230387345A1

公开(公告)日：2023-11-30

申请号：US18232416

申请日：2023-08-10

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： BEN-JIE FAN ,  JING-QIONG ZHANG ,  YI-QUN LI ,  HUNG-CHIH YANG ,  TSUNG-CHIEH LIN ,  HO-CHIEN CHEN ,  SHUEN-TA TENG ,  CHENG-CHANG HSIEH

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/14 ,  H01L33/50

CPC classification number: H01L33/06 ,  H01L33/32 ,  H01L33/14 ,  H01L33/502

Abstract: A light-emitting device is provided. The light-emitting device generates a white light and includes at least one light-emitting diode. The at least one light-emitting diode generates a light beam with a broadband blue spectrum and includes a first semiconductor layer, a second semiconductor layer and a multiple quantum well structure. The multiple quantum well structure is located between the first semiconductor layer and the second semiconductor layer, and includes well layers and barrier layers. The well layers include a first well layer, a second well layer and third well layers different in indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of the well layers that are closest to the first semiconductor layer are the third well layers, and the first well layer is closer to the second semiconductor layer than the first semiconductor layer

公开(公告)号：US20220158026A1

公开(公告)日：2022-05-19

申请号：US17590098

申请日：2022-02-01

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： BEN-JIE FAN ,  JING-QIONG ZHANG ,  YI-QUN LI ,  HUNG-CHIH YANG ,  TSUNG-CHIEH LIN ,  HO-CHIEN CHEN ,  SHUEN-TA TENG ,  CHENG-CHANG HSIEH

IPC: H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L33/50

Abstract: A light-emitting diode is provided. The light-emitting diode includes a P-type semiconductor layer, a N-type semiconductor layer, and a light-emitting stack located therebetween. The light-emitting stack includes a plurality of well layers and a plurality of barrier layers that are alternately stacked, the well layers includes at least one first well layer, at least one second well layer, and third well layers that have different indium concentrations. The first well layer has the largest indium concentration, and the third well layers have the smallest indium concentration. Three of well layers that are closest to the P-type semiconductor layer are the third well layers, and the first well layer is closer to the N-type semiconductor layer than the P-type semiconductor layer.

公开(公告)号：US20210167052A1

公开(公告)日：2021-06-03

申请号：US17169644

申请日：2021-02-08

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： JING-QIONG ZHANG ,  TSUNG-CHIEH LIN

IPC: H01L25/13 ,  H01L33/48

Abstract: A light emitting device is provided. The light emitting device includes a light emitting assembly having a first light emitting diode package structure and a second light emitting diode package structure. The light emitting assembly can generate a mixed light source having a spectral deviation index. The first light emitting diode package structure can generate a first light source having a first spectral deviation index. The second light emitting diode package structure can generate a second light source having a second spectral deviation index. When the first light source and the second light source are within a range from 460 to 500 nm, a sum of the first spectral deviation index and the second spectral deviation index is within a range from −0.3 to 0.3, and a difference between the first spectral deviation index and the second spectral deviation index is at least greater than 0.2.

公开(公告)号：US20210167049A1

公开(公告)日：2021-06-03

申请号：US17169632

申请日：2021-02-08

Applicant: KAISTAR Lighting(Xiamen) Co., Ltd.

Inventor： JING-QIONG ZHANG ,  TSUNG-CHIEH LIN

IPC: H01L25/075 ,  H01L33/48 ,  H01L33/62

Abstract: A light emitting diode package structure is provided. The light emitting diode package structure includes first and second chips. A value of an intensity of a peak wavelength of a first shoulder wave of the first chip divided by an intensity of a peak wavelength of a first main wave of the first chip is defined as a first intensity ratio. A value of an intensity of a peak wavelength of a second shoulder wave of the second chip divided by an intensity of a peak wavelength of a second main wave of the second chip is defined as a second intensity ratio. The first and second chips satisfy “a difference between the intensities of the peak wavelengths of the first and second main waves being less than or equal to 2.5 nanometers” and “a difference between the first and second intensity ratios being greater than 0.1”.