公开(公告)号：US20170243882A1

公开(公告)日：2017-08-24

申请号：US15253320

申请日：2016-08-31

申请人： KI-WON KIM ,  SUNG-HOON KIM ,  JAE-ICK SON

发明人： KI-WON KIM ,  SUNG-HOON KIM ,  JAE-ICK SON

IPC分类号： H01L27/115 ,  G11C16/04 ,  H01L27/02 ,  G11C16/06

CPC分类号： H01L27/11582 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/06 ,  H01L27/0207 ,  H01L27/11565 ,  H01L27/1157

摘要： A method of verifying a layout of a vertical memory device includes classifying a plurality of channel holes included in the layout of the vertical memory device into a plurality of types based on at least one of a distance between each channel hole and an isolation region adjacent thereto, shapes of the plurality of channel holes in the layout, and coordinates of the plurality of channel holes in the layout. Types of channel holes connected to each of a plurality of bit lines included in the layout are identified, and a determination is made whether loads of the plurality of bit lines are equalized, based on the identified types of the channel holes for each bit line.

公开(公告)号：US20170250195A1

公开(公告)日：2017-08-31

申请号：US15402258

申请日：2017-01-10

申请人： CHANG-BUM KIM ,  SUNG-HOON KIM ,  WOO-JOUNG KIM ,  HYANG-JA YANG

发明人： CHANG-BUM KIM ,  SUNG-HOON KIM ,  WOO-JOUNG KIM ,  HYANG-JA YANG

IPC分类号： H01L27/11582 ,  G03F1/36 ,  G06F17/50 ,  H01L21/027 ,  H01L27/11568 ,  H01L27/11573

CPC分类号： H01L27/11582 ,  G03F1/36 ,  G06F17/5081 ,  H01L21/027 ,  H01L27/11568 ,  H01L27/11573 ,  H01L27/11575

摘要： An optical proximity correction (OPC) verifying method including checking a first location of a first pattern in a layout of a stacked memory device, calculating a shift value of the first pattern according to the first location, obtaining a difference value between the first location and a second location of a second pattern formed through an OPC with respect to the first pattern, and determining whether the OPC is to be performed again, based on the shift value and the difference value.