IMPRINT APPARATUS, PATTERN FORMING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240201606A1

    公开(公告)日:2024-06-20

    申请号:US18456639

    申请日:2023-08-28

    CPC classification number: G03F9/7042 G03F7/2012 G03F7/70708

    Abstract: An imprint apparatus includes: a chuck including a temperature controller configured to adjust a temperature of a substrate having a shot region, the chuck configured to hold the substrate; a template stage configured to hold a template so that a surface of the template with a pattern faces the substrate and configured to change a relative position of the substrate to the template in a vertical direction; and a controller configured to control the chuck and the template stage. The controller is configured to control the temperature controller such that the temperature of the substrate is adjusted based on a magnification error between the pattern and the shot region. The controller controls the template stage such that the pattern is transferred to the shot region of the substrate of which the temperature is adjusted.

    PATTERN FORMING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND TEMPLATE

    公开(公告)号:US20230408935A1

    公开(公告)日:2023-12-21

    申请号:US18178358

    申请日:2023-03-03

    Inventor: Anupam MITRA

    CPC classification number: G03F9/7042 G03F7/0002 H01L21/0274

    Abstract: According to one embodiment, a pattern forming method includes placing a resin material on a film to be processed; pressing a template including a plurality of patterns protruding from a reference plane against the resin material to form a first resin film having first and second patterns, separated from each other in a first direction, and a third pattern between the first and second patterns; forming a second resin film that covers the first resin film; selectively exposing and developing the second resin film to expose the first and second patterns; and processing the film to be processed via the first and second resin films to transfer the first and second patterns to the film to be processed.

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