公开(公告)号：US11756633B2

公开(公告)日：2023-09-12

申请号：US17461848

申请日：2021-08-30

Applicant: KIOXIA CORPORATION

Inventor： Yoshinao Suzuki ,  Haruka Shibayama

IPC: G11C16/16 ,  G11C16/30 ,  G11C16/04 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26

Abstract: A semiconductor storage device includes a memory cell array and a voltage generation circuit configured to supply voltages of different levels to the memory cell array. The voltage generation circuit includes a first charge pump having a first characteristic and a second charge pump having a second characteristic that is substantially different from the first characteristic, and is controlled to electrically disconnect an output end of the first charge pump and an input end of the second charge pump in a first operation during which a first voltage is supplied to the memory cell array, and to electrically connect the output end of the first charge pump and the input end of the second charge pump in a second operation during which a second voltage higher than the first voltage is supplied to the memory cell array.