公开(公告)号：US20230091204A1

公开(公告)日：2023-03-23

申请号：US17681853

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takao KOSAKA ,  Hideto HORII ,  Hiroki TOKUHIRA ,  Kazuya MATSUZAWA ,  Hiroki KAWAI

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/4091 ,  H01L29/66

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.

公开(公告)号：US20220301625A1

公开(公告)日：2022-09-22

申请号：US17474904

申请日：2021-09-14

Applicant: Kioxia Corporation

Inventor： Tomoya SANUKI ,  Yasuhito YOSHIMIZU ,  Keisuke NAKATSUKA ,  Hideto HORII ,  Takashi MAEDA

IPC: G11C16/04 ,  G11C16/30 ,  G11C16/32 ,  G11C16/10 ,  G11C16/26 ,  G11C5/02 ,  G11C5/06

Abstract: A memory system has a memory cell array having a plurality of strings, the plurality of strings each having a plurality of memory cells connected in series, and a controller configured to perform control of transferring charges to be stored in the plurality of memory cells in the string or transferring charges according to stored data, between potential wells of channels in the plurality of memory cells.