公开(公告)号：US20220302385A1

公开(公告)日：2022-09-22

申请号：US17462819

申请日：2021-08-31

Applicant: Kioxia Corporation

Inventor： Takao KOSAKA ,  Hiroki TOKUHIRA

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistance change device of an embodiment includes: a first electrode; a second electrode; and a stack disposed between these electrodes, and including a first layer containing a resistance change material and a second layer in contact with the first layer. The resistance change material contains at least one of a first element such as Ge and a second element such as Sb, and at least one third element selected from Te, Se, S, and O. The second layer contains a crystal material containing at least one selected from a group consisting of a first material having a composition represented by (Ti,Zr,Hf)CoSb, (Zr,Hf)NiSn, or Fe(Nb,Zr,Hf)(Sb,Sn), a second material having a composition represented by Fe(V,Hf,W)(Al,Si), and a third material having a composition represented by Mg(Si,Ge,Sn).

公开(公告)号：US20240074151A1

公开(公告)日：2024-02-29

申请号：US18456383

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Takao KOSAKA

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/312 ,  H10B12/482 ,  H10B12/488

Abstract: According to one embodiment, a semiconductor device includes a conductive layer, an oxide semiconductor layer provided penetrating the conductive layer in a first direction, and a first insulating film provided between the conductive layer and the oxide semiconductor layer in a second direction that intersects the first direction. The first insulating film comprises boron nitride.

公开(公告)号：US20230091204A1

公开(公告)日：2023-03-23

申请号：US17681853

申请日：2022-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takao KOSAKA ,  Hideto HORII ,  Hiroki TOKUHIRA ,  Kazuya MATSUZAWA ,  Hiroki KAWAI

IPC: H01L27/108 ,  H01L29/786 ,  G11C11/4091 ,  H01L29/66

Abstract: A semiconductor device includes a first conductive layer extending along a first direction, a semiconductor layer extending along a second direction crossing the first direction, penetrating the first conductive layer, and including an oxide semiconductor, a first insulating layer between the first conductive layer and the semiconductor layer, a second conductive layer provided on one side of the semiconductor layer in the second direction and electrically connected thereto, a third conductive layer provided on the other side of the semiconductor layer in the second direction and electrically connected thereto, an electric conductor extending from the third conductive layer toward the second conductive layer along the semiconductor layer, and a charge storage film between the semiconductor layer and the electric conductor.