公开(公告)号：US20240071478A1

公开(公告)日：2024-02-29

申请号：US18504018

申请日：2023-11-07

Applicant: Kioxia Corporation

Inventor： Hideyuki KATAOKA ,  Yoshinao SUZUKI ,  Mai SHIMIZU ,  Kazuyoshi MURAOKA ,  Masami MASUDA ,  Yoshikazu HOSOMURA

IPC: G11C11/4096 ,  G11C5/06 ,  G11C11/4072 ,  G11C11/4076

CPC classification number: G11C11/4096 ,  G11C5/063 ,  G11C11/4072 ,  G11C11/4076

Abstract: A semiconductor memory device comprises a first memory cell and a second memory cell. The semiconductor memory device is configured to be able to perform: a first operation which is a read operation or the like to the first memory cell; and a second operation which is a read operation or the like to the second memory cell. The semiconductor memory device transitions to a standby mode after performing the first operation in response to an input of a first command set and a second command set. The semiconductor memory device performs a charge share operation after the standby mode is released in response to an input of a third command set and a fourth command set during the standby mode. The semiconductor memory device performs the second operation using at least a part of an electric charge generated when the first operation is performed.

公开(公告)号：US20230083392A1

公开(公告)日：2023-03-16

申请号：US17680144

申请日：2022-02-24

Applicant: KIOXIA CORPORATION

Inventor： Yoshikazu HOSOMURA ,  Hideyuki KATAOKA ,  Yoshinao SUZUKI ,  Mai SHIMIZU ,  Kazuyoshi MURAOKA ,  Masami MASUDA

IPC: H01L27/11524 ,  G11C16/04 ,  G11C5/06 ,  H01L27/11519 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11578

Abstract: A semiconductor storage device includes a memory cell array having a plurality of first conductive layers stacked in a first direction and a plurality of memory cells connected to the plurality of first conductive layers, a wiring layer, and an insulating layer between the memory cell array and the wiring layer and separating the memory cell array and the wiring layer in a second direction intersecting the first direction. The wiring layer includes a plurality of second conductive layers stacked in the first direction, each of the second conductive layers having a corresponding first conductive layer at a same layer, and a contact connected to at least a part of the plurality of second conductive layers and extending in the first direction.