公开(公告)号：US20240058847A1

公开(公告)日：2024-02-22

申请号：US18496222

申请日：2023-10-27

Applicant: KIOXIA CORPORATION

Inventor： Minako INUKAI ,  Masatoshi TERAYAMA

IPC: B08B13/00 ,  B08B3/02

CPC classification number: B08B13/00 ,  B08B3/02 ,  H01L21/67253

Abstract: A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

公开(公告)号：US20230090997A1

公开(公告)日：2023-03-23

申请号：US17695512

申请日：2022-03-15

Applicant: Kioxia Corporation

Inventor： Minako INUKAI ,  Masatoshi TERAYAMA

IPC: B08B13/00 ,  B08B3/02

Abstract: A substrate processing apparatus for cleaning and drying a substrate under processing, including supplying a cleaning liquid onto the substrate under processing to form a cleaning liquid layer, supplying a gas onto the substrate under processing to partially remove the cleaning liquid layer and thus generate a first dry region on the substrate under processing, expanding the first dry region to generate a second dry region by controlling the movement speed of the boundary between the cleaning liquid layer and the first dry region to be less than or equal to a predetermined speed, and further expanding the second dry region to generate a third dry region.

公开(公告)号：US20230307261A1

公开(公告)日：2023-09-28

申请号：US17930856

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Kenji MASUI ,  Masatoshi TERAYAMA

IPC: H01L21/67 ,  H01L21/687

CPC classification number: H01L21/67051 ,  H01L21/67109 ,  H01L21/68764

Abstract: A substrate processing apparatus according to one embodiment includes a substrate holding part having a stage holding the substrate, a freezing solution supply part supplying the freezing solution to the substrate, a cooling part cooling the freezing solution to form a freezing film, and a thawing solution supply part having a nozzle extending in a first direction including a central part of the stage in a plan view, wherein an end and an other end opposite to the end of the nozzle in the first direction are located on an outer periphery outside of the central part, and the thawing solution supply part supplies a thawing solution having at least one of a different supply volume, temperature, or supply timing between the central part and the outer periphery to the substrate to thaw the freezing film.

公开(公告)号：US20230420291A1

公开(公告)日：2023-12-28

申请号：US18177979

申请日：2023-03-03

Applicant: Kioxia Corporation

Inventor： Masatoshi TERAYAMA

IPC: H01L21/768 ,  H01L21/027 ,  G03F7/00

CPC classification number: H01L21/76817 ,  H01L21/0271 ,  H01L21/76877 ,  G03F7/0002

Abstract: A pattern forming method includes: forming a second layer over a first layer; forming a first pattern along a surface of the second layer opposite to the first layer, the first pattern including an inclined portion with a recessed portion; and forming a second pattern on the first layer by performing, with the second layer as a mask, a first etching process to remove a part of the first layer.