公开(公告)号：US20240008278A1

公开(公告)日：2024-01-04

申请号：US18359112

申请日：2023-07-26

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H10B43/35 ,  H01L21/28 ,  H10B43/27

CPC classification number: H10B43/35 ,  H01L29/40117 ,  H10B43/27

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.

公开(公告)号：US20240422984A1

公开(公告)日：2024-12-19

申请号：US18816566

申请日：2024-08-27

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H10B43/35 ,  H01L21/28 ,  H10B43/27

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.

公开(公告)号：US20230027173A1

公开(公告)日：2023-01-26

申请号：US17958849

申请日：2022-10-03

Applicant: Kioxia Corporation

Inventor： Kaito SHIRAI ,  Hideto TAKEKIDA ,  Tatsuo IZUMI ,  Reiko SHAMOTO ,  Takahisa KANEMURA ,  Shigeo KONDO

IPC: H01L27/11582 ,  H01L29/51 ,  H01L27/11565 ,  H01L21/28 ,  H01L27/1157

Abstract: A semiconductor device is provided, including: a substrate; a first stacked portion including a plurality of first electrode layers stacked in a first direction via a first insulator; a second stacked portion provided above the first stacked portion and including a plurality of second electrode layers stacked in the first direction via a second insulator; a connection portion provided between the first stacked portion and the second stacked portion, and including a third insulator; a column-shaped portion extending in the first stacked portion, the second stacked portion, and the connection portion in the first direction, and including a semiconductor body and a charge storage portion; and a semiconductor pillar provided between the substrate and the column-shaped portion, and in contact with the substrate and the semiconductor body of the column-shaped portion.

公开(公告)号：US20220231032A1

公开(公告)日：2022-07-21

申请号：US17716450

申请日：2022-04-08

Applicant: KIOXIA CORPORATION

Inventor： Hiroki TOKUHIRA ,  Takahisa KANEMURA ,  Shigeo KONDO ,  Michiru HOGYOKU

IPC: H01L27/1157 ,  H01L27/11582 ,  H01L21/28

Abstract: A semiconductor memory device according to an embodiment includes a first stacked body, a second stacked body, an intermediate conductive layer, an intermediate insulating layer, a semiconductor pillar, a charge storage film, and an insulating film. The semiconductor pillar includes a first part, a second part, and a third part. The charge storage film includes a first charge storage portion and a second charge storage portion. The charge storage film includes at least one first element selected from the group consisting of nitrogen, hafnium, and aluminum. The insulating film provides in at least a portion between the intermediate conductive layer and the first part. The insulating film not includes the first element, or the insulating film has a concentration of the first element lower than a concentration of the first element of the charge storage film.