公开(公告)号：US20250098545A1

公开(公告)日：2025-03-20

申请号：US18829343

申请日：2024-09-10

Applicant: Kioxia Corporation

Inventor： Kenji FUKUDA ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Soichi OIKAWA

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

Abstract: According to one embodiment, a magnetic memory device includes a first ferromagnetic layer having a fixed magnetization direction, a second ferromagnetic layer having a variable magnetization direction, a first nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer provided on an opposite side to a side on which the first nonmagnetic layer is provided with respect to the second ferromagnetic layer. At least one of the first nonmagnetic layer and the second nonmagnetic layer is an oxide layer including magnesium (Mg) and a group 4 element. The group 4 element includes at least one element selected from a group consisting of zirconium (Zr), hafnium (Hf), and rutherfordium (Rf).

公开(公告)号：US20240324470A1

公开(公告)日：2024-09-26

申请号：US18606182

申请日：2024-03-15

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Takuya SHIMANO ,  Hyungjun CHO

IPC: H10N50/80 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

CPC classification number: H10N50/80 ,  H10B61/10 ,  H10N50/01 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a lower structure, a bottom electrode provided on the lower structure and formed of a conductive material, a top electrode provided above the bottom electrode, a magnetoresistance effect element provided between the bottom electrode and the top electrode, and an oxide insulating layer including a first portion provided on a side surface of the bottom electrode and a second portion provided on a side surface of the magnetoresistance effect element, and formed of an oxide of the conductive material.

公开(公告)号：US20240099158A1

公开(公告)日：2024-03-21

申请号：US18466727

申请日：2023-09-13

Applicant: Kioxia Corporation

Inventor： Kenichi YOSHINO ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Hyungjun CHO

IPC: H10N50/85 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/85 ,  G11C11/161 ,  H10B61/00 ,  H10N50/10

Abstract: According to one embodiment, a magnetic memory device includes a first wiring line extending in a first direction, a second wiring line provided on an upper layer side of the first wiring line and extending in a second direction intersecting the first direction, and a memory cell provided between the first wiring line and the second wiring line and including a magnetoresistance effect element and a switching element which are stacked in a third direction intersecting the first direction and the second direction. The first wiring line includes a first conductive layer and a second conductive layer provided on the first conductive layer and formed of a material containing carbon (C).

公开(公告)号：US20230301116A1

公开(公告)日：2023-09-21

申请号：US17943151

申请日：2022-09-12

Applicant: Kioxia Corporation ,  SK hynix Inc.

Inventor： Kenichi YOSHINO ,  Kazuya SAWADA ,  Naoki AKIYAMA ,  Takuya SHIMANO ,  Cha Deok DONG ,  Keorock CHOI ,  Bokyung JUNG ,  Gukcheon KIM

IPC: H01L27/22 ,  H01L43/12

CPC classification number: H01L27/224 ,  H01L43/12

Abstract: According to one embodiment, a magnetic: memory device includes a stacked structure in which a magnetoresistance effect element and a switching element are stacked. The switching element is provided on a lower layer side of the magnetoresistance effect element, and when viewed in a stacking direction of the magnetoresistance effect element and the switching element, a pattern of the switching element is located inside a pattern of the magnetoresistance effect element.

公开(公告)号：US20230292529A1

公开(公告)日：2023-09-14

申请号：US17943160

申请日：2022-09-12

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Hyungjun CHO ,  Takuya SHIMANO

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

CPC classification number: H01L27/224 ,  H01L43/02 ,  H01L43/12

Abstract: According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

公开(公告)号：US20230269950A1

公开(公告)日：2023-08-24

申请号：US17842417

申请日：2022-06-16

Applicant: Kioxia Corporation

Inventor： Tadaaki OIKAWA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Takuya SHIMANO ,  Young Min EEH ,  Taiga ISODA

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L27/224 ,  H01L43/02 ,  G11C11/161 ,  H01L43/10

Abstract: A magnetic memory device according to an embodiment includes a first ferromagnetic layer, a first nonmagnetic layer on the first ferromagnetic layer, a second ferromagnetic layer on the first nonmagnetic layer, an oxide layer on the second ferromagnetic layer, and a second nonmagnetic layer on the oxide layer. The oxide layer contains an oxide of a rare-earth element. The second nonmagnetic layer contains cobalt (Co), iron (Fe), boron (B), and molybdenum (Mo).

公开(公告)号：US20220085279A1

公开(公告)日：2022-03-17

申请号：US17471340

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Kazuya SAWADA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Eiji KITAGAWA ,  Taiga ISODA

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16

Abstract: According to one embodiment, a magnetic memory device includes a magnetoresistance effect element. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a first non-magnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second non-magnetic layer between the second ferromagnetic layer and the third ferromagnetic layer. The second ferromagnetic layer is between the first ferromagnetic layer and the third ferromagnetic layer. The first non-magnetic layer contains an oxide containing magnesium (Mg). The third ferromagnetic layer contains silicon (Si) or germanium (Ge).

公开(公告)号：US20210287728A1

公开(公告)日：2021-09-16

申请号：US17016256

申请日：2020-09-09

Applicant: Kioxia Corporation ,  SK hynix Inc.

Inventor： Taiga ISODA ,  Eiji KITAGAWA ,  Young Min EEH ,  Tadaaki OIKAWA ,  Kazuya SAWADA ,  Jin Won JUNG

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  G01R33/09

Abstract: According to one embodiment, a memory device includes: a first ferromagnetic layer; an insulating layer above the first ferromagnetic layer; a second ferromagnetic layer above the insulating layer; a capping layer on an upper surface of the second ferromagnetic layer; and an electrode on an upper surface of the capping layer. The second ferromagnetic layer includes iron atoms. The capping layer includes one or more elements identical to one or more elements in the second ferromagnetic layer. The electrode including one or more elements identical to one or more of the elements in the capping layer and includes a material having a Vickers hardness higher than a Vickers hardness of an iron atom.

公开(公告)号：US20240099021A1

公开(公告)日：2024-03-21

申请号：US18465759

申请日：2023-09-12

Applicant: Kioxia Corporation

Inventor： Naoki AKIYAMA ,  Kenichi YOSHINO ,  Kazuya SAWADA ,  Hyungjun CHO ,  Takuya SHIMANO

IPC: H10B61/00

CPC classification number: H10B61/10

Abstract: According to one embodiment, a magnetic memory device includes a lower insulating layer, first and second conductive portions provided in the lower insulating layer, first and second memory cells provided on the lower insulating layer and on the respective first and second conductive portions, and each including a magnetoresistance effect element, a switching element and a bottom electrode connected to corresponding one of the first and second conductive portions. As viewed from a third direction, a width of each of the first and second conductive portions is less than a width of a corresponding bottom electrode. The lower insulating layer has a void under a region between the first and second memory cells.

公开(公告)号：US20230284537A1

公开(公告)日：2023-09-07

申请号：US17884790

申请日：2022-08-10

Applicant: Kioxia Corporation

Inventor： Kazuhiro TOMIOKA ,  Kazuya SAWADA

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

CPC classification number: H01L43/08 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12 ,  H01L43/10

Abstract: According to one embodiment, a memory device includes a memory element provided above a substrate in a first direction perpendicular to a first surface of the substrate; a switching element provided between the substrate and the memory element; and a first layer provided between the memory element and the switching element. The first layer includes at least one selected from the group including boron, carbon, silicon, magnesium, aluminum, scandium, titanium, vanadium, gallium, germanium, yttrium, zirconium, niobium, molybdenum, palladium, silver, hafnium, tantalum, tungsten, iridium, and platinum. The first layer includes an air gap.