公开(公告)号：US20240120395A1

公开(公告)日：2024-04-11

申请号：US18537954

申请日：2023-12-13

Applicant: KIOXIA CORPORATION

Inventor： Megumi ISHIDUKI ,  Hiroshi NAKAKI ,  Takamasa ITO

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/792 ,  H10B43/10 ,  H10B43/27 ,  H10B43/50

CPC classification number: H01L29/42344 ,  H01L29/66833 ,  H01L29/7926 ,  H10B43/10 ,  H10B43/27 ,  H10B43/50 ,  H01L23/528

Abstract: A semiconductor device includes a base body, a stacked body on the base body and a first columnar part. The base body includes a substrate, a first insulating film on the substrate, a first conductive film on the first insulating film, and a first semiconductor part on the first conductive film. The stacked body includes conductive layers and insulating layers stacked alternately in a stacking direction. The first columnar part is provided inside the stacked body and the first semiconductor part. The first columnar part includes a semiconductor body and a memory film between the semiconductor body and conductive layers. The semiconductor body extends in the stacking direction. The first columnar part has a first diameter and a second diameter in a first direction crossing the stacking direction. The first diameter inside the first semiconductor part is larger than the second diameter inside the stacked body.

公开(公告)号：US20220068948A1

公开(公告)日：2022-03-03

申请号：US17124808

申请日：2020-12-17

Applicant: Kioxia Corporation

Inventor： Takamasa ITO ,  Hiroshi MATSUMOTO

IPC: H01L27/11575 ,  H01L27/11565 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device includes a semiconductor substrate on which a first insulation film is provided. A first conductive film is on the first insulation film. First electrode films are on the first conductive film and stacked. A charge accumulation member is between one of the first electrode films and the semiconductor member. The first conductive film includes a main body arranged below the first electrode films and an outer peripheral portion provided in an outer periphery of the main body to be apart from the main body. First and second slits are alternately provided in the outer peripheral portion, and extend along the outer periphery of the main body. The first and second slits are apart from each other as viewed in the stacking direction, and partly overlap each other as viewed in a first direction directed from the main body toward the outer peripheral portion.

公开(公告)号：US20210066329A1

公开(公告)日：2021-03-04

申请号：US16805466

申请日：2020-02-28

Applicant: KIOXIA CORPORATION

Inventor： Takamasa ITO

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/02 ,  G11C5/06

Abstract: A semiconductor storage device includes a substrate, a first conductor layer, a plurality of second conductor layers, and a first contact. The substrate includes a core region, a first region surrounding the core region, and a second region connecting the core region and the first region. The first conductor layer is above the core region, the first region, and the second region. The second conductor layers are above the first conductor layer above the core region. The first contact is above the first region and extends in the thickness direction. The first contact separates the first conductor layer above the first region into a first portion surrounded by the first contact and a second portion surrounding the first contact. The first portion of the first conductor layer includes a first oxidized portion, and the second portion of the first conductor layer includes a second oxidized portion.

公开(公告)号：US20240040782A1

公开(公告)日：2024-02-01

申请号：US18484492

申请日：2023-10-11

Applicant: KIOXIA CORPORATION

Inventor： Takamasa ITO

IPC: H10B41/27 ,  G11C5/06 ,  G11C5/02 ,  H10B43/27

CPC classification number: H10B41/27 ,  G11C5/06 ,  G11C5/025 ,  H10B43/27

Abstract: According to an embodiment, a semiconductor memory device includes a first conductive layer and second conductive layers arranged at intervals in a first direction above the first conductive layer. A semiconductor layer extends in the first direction in the second conductive layers to be in contact with the first conductive layer. A charge storage layer is between the semiconductor layer and the second conductive layers. A metal layer extends in the first direction and a second direction above the first conductive layer, and separates the second conductive layers. The device further includes an insulating layer. The insulating layer includes a portion between the metal layer and the first conductive layer and a portion between the metal layer and the second conductive layers.

公开(公告)号：US20220285509A1

公开(公告)日：2022-09-08

申请号：US17825542

申请日：2022-05-26

Applicant: Kioxia Corporation

Inventor： Megumi ISHIDUKI ,  Hiroshi NAKAKI ,  Takamasa ITO

IPC: H01L29/423 ,  H01L29/66 ,  H01L27/11575 ,  H01L27/11582 ,  H01L27/11565 ,  H01L29/792

Abstract: A semiconductor device includes a base body, a stacked body on the base body and a first columnar part. The base body includes a substrate, a first insulating film on the substrate, a first conductive film on the first insulating film, and a first semiconductor part on the first conductive film. The stacked body includes conductive layers and insulating layers stacked alternately in a stacking direction. The first columnar part is provided inside the stacked body and the first semiconductor part. The first columnar part includes a semiconductor body and a memory film between the semiconductor body and conductive layers. The semiconductor body extends in the stacking direction. The first columnar part has a first diameter and a second diameter in a first direction crossing the stacking direction. The first diameter inside the first semiconductor part is larger than the second diameter inside the stacked body.

公开(公告)号：US20210082933A1

公开(公告)日：2021-03-18

申请号：US16798577

申请日：2020-02-24

Applicant: Kioxia Corporation

Inventor： Takamasa ITO

IPC: H01L27/11556 ,  H01L27/11582 ,  G11C5/02 ,  G11C5/06

Abstract: According to an embodiment, a semiconductor memory device includes a first conductive layer and second conductive layers arranged at intervals in a first direction above the first conductive layer. A semiconductor layer extends in the first direction in the second conductive layers to be in contact with the first conductive layer. A charge storage layer is between the semiconductor layer and the second conductive layers. A metal layer extends in the first direction and a second direction above the first conductive layer, and separates the second conductive layers. The device further includes an insulating layer. The insulating layer includes a portion between the metal layer and the first conductive layer and a portion between the metal layer and the second conductive layers.