Defect Classification by Fitting Optical Signals to a Point-Spread Function

    公开(公告)号:US20200175664A1

    公开(公告)日:2020-06-04

    申请号:US16355584

    申请日:2019-03-15

    Abstract: A semiconductor die is inspected using an optical microscope to generate a test image of the semiconductor die. A difference image between the test image of the semiconductor die and a reference image is derived. For each defect of a plurality of defects for the semiconductor die, a point-spread function is fit to the defect as indicated in the difference image and one or more dimensions of the fitted point-spread function are determined. Potential defects of interest in the plurality of defects are distinguished from nuisance defects, based at least in part on the one or more dimensions of the fitted point-spread function for respective defects of the plurality of defects.

    Tool health monitoring and matching

    公开(公告)号:US10360671B2

    公开(公告)日:2019-07-23

    申请号:US15646808

    申请日:2017-07-11

    Abstract: Systems and methods for tool health monitoring and matching through integrated real-time data collection, event prioritization, and automated determination of matched states through image analysis are disclosed. Data from the semiconductor production tools can be received in real-time. A control limit impact (CLI) of the parametric data and the defect attributes data can be determined and causation factors can be prioritized. Image analysis techniques can compare images and can be used to judge tool matching, such as by identifying one of the states at which the two or more of the semiconductor manufacturing tools match.

    Convolutional Neural Network-based Mode Selection and Defect Classification for Image Fusion

    公开(公告)号:US20180075594A1

    公开(公告)日:2018-03-15

    申请号:US15371882

    申请日:2016-12-07

    Inventor: Bjorn Brauer

    Abstract: Systems and methods for classifying defects using hot scans and convolutional neural networks (CNNs) are disclosed. Primary scanning modes are identified by a processor and a hot scan of a wafer is performed. Defects of interest and nuisance data are selected and images of those areas are captured using one or more secondary scanning modes. Image sets are collected and divided into subsets. CNNs are trained using the image subsets. An ideal secondary scanning mode is determined and a final hot scan is performed. Defects are filtered and classified according to the final hot scan and the ideal secondary scanning mode CNN. Disclosed systems for classifying defects utilize image data acquisition subsystems such as a scanning electron microscope as well as processors and electronic databases.

    Capture of repeater defects on a semiconductor wafer

    公开(公告)号:US10557802B2

    公开(公告)日:2020-02-11

    申请号:US16101553

    申请日:2018-08-13

    Abstract: Repeater analysis at a first threshold identifies repeater defects. The repeater defects are located at a coordinate that is the same on each reticle. Images on every reticle of the semiconductor wafer at the coordinate are received, and a plurality of signed difference images are obtained. A repeater threshold for signed difference images is calculated, as is consistency of the polarity. The threshold is applied to the images and a number of defects per each repeater that remain are determined. A secondary repeater threshold can be applied for nuisance filtering.

    COMBINING SIMULATION AND OPTICAL MICROSCOPY TO DETERMINE INSPECTION MODE

    公开(公告)号:US20190287232A1

    公开(公告)日:2019-09-19

    申请号:US16295715

    申请日:2019-03-07

    Inventor: Bjorn Brauer

    Abstract: A best optical inspection mode to detect defects can be determined when no defect examples or only a limited number of defect examples are available. A signal for a defect of interest at the plurality of sites and for the plurality of modes can be determined using electromagnetic simulation. A ratio of the signal for the defect of interest to the noise at each combination of the plurality of sites and the plurality of modes can be determined. A mode with optimized signal-to-noise characteristics can be determined based on the ratios.

    IDENTIFYING A SOURCE OF NUISANCE DEFECTS ON A WAFER

    公开(公告)号:US20190025229A1

    公开(公告)日:2019-01-24

    申请号:US15947730

    申请日:2018-04-06

    Inventor: Bjorn Brauer

    Abstract: Methods and systems for identifying a source of nuisance defects on a wafer are provided. One method includes detecting defects on a wafer by applying a hot threshold to output generated for the wafer by a detector of an inspection subsystem such that at least a majority of the detected defects include nuisance defects and determining locations of the detected defects with respect to design information for the wafer. In addition, the method includes stacking information for the detected defects based on the determined locations relative to a structure on the wafer such that the detected defects having the same locations relative to the structure are coincident with each other in results of the stacking. The method further includes identifying a source of the nuisance defects based on the results of the stacking.

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