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    Nuisance reduction using location-based attributes
    1.
    发明授权
    Nuisance reduction using location-based attributes 有权

    公开(公告)号：US10600177B2

    公开(公告)日：2020-03-24

    申请号：US15858511

    申请日：2017-12-29

    Applicant: KLA-Tencor Corporation

    Inventor： Bjorn Brauer ,  Junqing Huang ,  Lisheng Gao

    IPC: G06T7/00 ,  G06T7/73

    Abstract: Methods and systems are disclosed that provide nuisance reduction in images, such as semiconductor images that include one or more metal lines. A potential defect is correlated against pixel grey level intensity charts for two perpendicular axes. A position of the potential defect relative to a pattern, such as a metal line, is determined along the two axes. The potential defect can be classified as a defect of interest or nuisance event.

    PREVIOUS LAYER NUISANCE REDUCTION THROUGH OBLIQUE ILLUMINATION
    2.
    发明申请
    PREVIOUS LAYER NUISANCE REDUCTION THROUGH OBLIQUE ILLUMINATION 审中-公开

    公开(公告)号：US20190279357A1

    公开(公告)日：2019-09-12

    申请号：US16293599

    申请日：2019-03-05

    Applicant: KLA-Tencor Corporation

    Inventor： Jingshan Zhong ,  Bjorn Brauer ,  Lisheng Gao

    IPC: G06T7/00 ,  G06F17/50

    Abstract: Methods and systems for determining a layer on which a defect detected on a wafer is located are provided. One method includes detecting defects on a wafer by directing light to the wafer at first and second angles of incidence and determining locations of the defects on the wafer based on the output corresponding to the defects. For one of the defects detected in the output generated for one spot illuminated on the wafer with the light directed to the wafer at the first and second angles, the method includes comparing the locations of the one of the defects determined based on the output generated with the light directed to the one spot on the wafer at the first and second angles. The method further includes determining a layer of the wafer on which the one of the defects is located based on results of the comparing.

    Method and system for correlating optical images with scanning electron microscopy images
    3.
    发明授权
    Method and system for correlating optical images with scanning electron microscopy images 有权

    公开(公告)号：US10410338B2

    公开(公告)日：2019-09-10

    申请号：US14506407

    申请日：2014-10-03

    Applicant: KLA-Tencor Corporation

    Inventor： Hucheng Lee ,  Lisheng Gao ,  Jan Lauber ,  Yong Zhang

    IPC: G06T7/00 ,  G06T5/00 ,  H01J37/22 ,  H01J37/28

    Abstract: The correlation of optical images with SEM images includes acquiring a full optical image of a sample by scanning the sample with an optical inspection sub-system, storing the full optical image, identifying a location of a feature-of-interest present in the full optical image with an additional sources, acquiring an SEM image of a portion of the sample that includes the feature at the identified location with a SEM tool, acquiring an optical image portion at the location identified by the additional source, the image portions including a reference structure, correlating the image portion and the SEM image based on the presence of the feature-of-interest and the reference structure in both the image portions and the SEM image, and transferring a location of the feature-of-interest in the SEM image into the coordinate system of the image portion of the full optical image to form a corrected optical image.

    Optical die to database inspection
    5.
    发明授权
    Optical die to database inspection 有权

    公开(公告)号：US09915625B2

    公开(公告)日：2018-03-13

    申请号：US15391753

    申请日：2016-12-27

    Applicant: KLA-Tencor Corporation

    Inventor： Lisheng Gao ,  Tao Luo ,  Keith Wells ,  Xiaochun Li

    IPC: G01N21/95 ,  G01N21/956 ,  G06T7/00

    CPC classification number: G01N21/95607 ,  G01N21/9501 ,  G01N2201/12 ,  G06T7/001 ,  G06T2207/20084 ,  G06T2207/30148

    Abstract: Methods and systems for detecting defects on a wafer are provided. One system includes one or more computer subsystems configured for generating a rendered image based on information for a design printed on the wafer. The rendered image is a simulation of an image generated by an optical inspection subsystem for the design printed on the wafer. Generating the rendered image includes one or more steps, and the computer subsystem(s) are configured for performing at least one of the one or more steps by executing a generative model. The computer subsystem(s)) are also configured for comparing the rendered image to an optical image of the wafer generated by the optical inspection subsystem. The design is printed on the wafer using a reticle. In addition, the computer subsystem(s) are configured for detecting defects on the wafer based on results of the comparing.

    Based sampling and binning for yield critical defects
    9.
    发明授权
    Based sampling and binning for yield critical defects 有权
    用于产量关键缺陷的基于抽样和合并

    公开(公告)号：US09563943B2

    公开(公告)日：2017-02-07

    申请号：US15092510

    申请日：2016-04-06

    Applicant: KLA-Tencor Corporation

    Inventor： Satya Kurada ,  Raghav Babulnath ,  Kwok Ng ,  Lisheng Gao

    IPC: G06K9/00 ,  G06T7/00 ,  G01N21/956 ,  G01N21/95

    CPC classification number: G06T7/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/95676 ,  G01N2201/06113 ,  G01N2201/068 ,  G01N2201/10 ,  G01N2201/12 ,  G06K9/00 ,  G06K9/66 ,  G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

    Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

    Abstract translation: 提供了用于产量关键缺陷的基于设计的抽样和装箱的方法和系统。 一种方法包括通过检查系统的光学子系统对于为晶片生成的每个检查图像帧中的每个图像补片进行对准以设计晶片的信息。 该方法还包括在图像斑块中检测到的缺陷位置导出多层设计属性。 另外，该方法包括使用多层设计属性构建决策树。 决策树用于将缺陷分离成对晶片上形成的器件产生不同产量的影响。 该方法还包括使用决策树将缺陷合并。

    Based sampling and binning for yield critical defects
    10.
    发明授权
    Based sampling and binning for yield critical defects 有权
    用于产量关键缺陷的基于抽样和合并

    公开(公告)号：US09310320B2

    公开(公告)日：2016-04-12

    申请号：US14251415

    申请日：2014-04-11

    Applicant: KLA-Tencor Corporation

    Inventor： Satya Kurada ,  Raghav Babulnath ,  Kwok Ng ,  Lisheng Gao

    IPC: G06K9/00 ,  G01N21/956 ,  G06T7/00 ,  G01N21/95

    CPC classification number: G06T7/0006 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/95676 ,  G01N2201/06113 ,  G01N2201/068 ,  G01N2201/10 ,  G01N2201/12 ,  G06K9/00 ,  G06K9/66 ,  G06T7/0008 ,  G06T7/001 ,  G06T2207/20081 ,  G06T2207/30148

    Abstract: Methods and systems for design based sampling and binning for yield critical defects are provided. One method includes aligning each image patch in each inspection image frame generated for a wafer by an optical subsystem of an inspection system to design information for the wafer. The method also includes deriving multiple layer design attributes at locations of defects detected in the image patches. In addition, the method includes building a decision tree with the multiple layer design attributes. The decision tree is used to separate the defects into bins with different yield impacts on a device being formed on the wafer. The method also includes binning the defects with the decision tree.

    Abstract translation: 提供了用于产量关键缺陷的基于设计的抽样和装箱的方法和系统。 一种方法包括通过检查系统的光学子系统对于为晶片生成的每个检查图像帧中的每个图像补片进行对准以设计晶片的信息。 该方法还包括在图像斑块中检测到的缺陷位置导出多层设计属性。 另外，该方法包括使用多层设计属性构建决策树。 决策树用于将缺陷分离成对晶片上形成的器件产生不同产量的影响。 该方法还包括使用决策树将缺陷合并。

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