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1.发明授权Linear stage and metrology architecture for reflective electron beam lithography 有权反射电子束光刻的线性阶段和计量结构公开(公告)号：US08724115B2
公开(公告)日：2014-05-13
申请号：US13914351
申请日：2013-06-10
Applicant: KLA-Tencor Corporation
Inventor： Upendra Ummethala , Layton Hale , Josh Clyne , Samir Nayfeh , Mark Williams , Joseph A. DiRegolo , Andrew Wilson
IPC: G01B11/02
CPC classification number: G01B11/02 , B82Y10/00 , B82Y40/00 , G01B11/14 , G01B21/16 , G03F7/70716 , G03F7/70775 , G03F7/70816 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J2237/2445 , H01J2237/24578 , H01J2237/30433 , H01J2237/30438
Abstract: A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Abstract translation: 适用于REBL的舞台计量包括配置成测量短行晶片扫描台的位置和旋转的干涉仪台计量系统，其中干涉仪计量系统包括用于每个测量轴的两个或更多个干涉仪，其中第一干涉仪镜是 设置在短冲程晶片扫描台的第一表面上，第二干涉仪镜设置在短行晶片扫描台的第二表面上;以及控制系统，被配置为使用两个第二干涉仪来确定第一干涉仪镜的形状误差 或更多的来自与第一干涉仪镜相关联的两个或更多个干涉仪的干涉仪测量，以及使用来自与第二干涉仪镜相关联的两个或更多个干涉仪的两个或更多个干涉仪测量的第二干涉仪镜的形状误差。
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2.发明申请Linear Stage and Metrology Architecture for Reflective Electron Beam Lithography 有权反射电子束光刻的线性阶段和计量结构公开(公告)号：US20130342827A1
公开(公告)日：2013-12-26
申请号：US13914351
申请日：2013-06-10
Applicant: KLA-Tencor Corporation
Inventor： Upendra Ummethala , Layton Hale , Josh Clyne , Samir Nayfeh , Mark Williams , Joseph A. DiRegolo , Andrew Wilson
CPC classification number: G01B11/02 , B82Y10/00 , B82Y40/00 , G01B11/14 , G01B21/16 , G03F7/70716 , G03F7/70775 , G03F7/70816 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J2237/2445 , H01J2237/24578 , H01J2237/30433 , H01J2237/30438
Abstract: A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Abstract translation: 适用于REBL的舞台计量包括配置成测量短行晶片扫描台的位置和旋转的干涉仪台计量系统，其中干涉仪计量系统包括用于每个测量轴的两个或更多个干涉仪，其中第一干涉仪镜是 设置在短冲程晶片扫描台的第一表面上，第二干涉仪镜设置在短行晶片扫描台的第二表面上;以及控制系统，被配置为使用两个第二干涉仪来确定第一干涉仪镜的形状误差 或更多的来自与第一干涉仪镜相关联的两个或更多个干涉仪的干涉仪测量，以及使用来自与第二干涉仪镜相关联的两个或更多个干涉仪的两个或更多个干涉仪测量的第二干涉仪镜的形状误差。
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