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公开(公告)号：US20170131129A1
公开(公告)日：2017-05-11
申请号：US15261639
申请日：2016-09-09
Applicant: KLA-Tencor Corporation
Inventor： Brian Ahr , Alexander Bykanov , Rudy F. Garcia , Layton Hale , Oleg Khodykin
CPC classification number: H05G2/008 , H05G2/006 , H05H2240/00
Abstract: The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.
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2.发明授权Linear stage and metrology architecture for reflective electron beam lithography 有权反射电子束光刻的线性阶段和计量结构公开(公告)号：US08724115B2
公开(公告)日：2014-05-13
申请号：US13914351
申请日：2013-06-10
Applicant: KLA-Tencor Corporation
Inventor： Upendra Ummethala , Layton Hale , Josh Clyne , Samir Nayfeh , Mark Williams , Joseph A. DiRegolo , Andrew Wilson
IPC: G01B11/02
CPC classification number: G01B11/02 , B82Y10/00 , B82Y40/00 , G01B11/14 , G01B21/16 , G03F7/70716 , G03F7/70775 , G03F7/70816 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J2237/2445 , H01J2237/24578 , H01J2237/30433 , H01J2237/30438
Abstract: A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Abstract translation: 适用于REBL的舞台计量包括配置成测量短行晶片扫描台的位置和旋转的干涉仪台计量系统，其中干涉仪计量系统包括用于每个测量轴的两个或更多个干涉仪，其中第一干涉仪镜是 设置在短冲程晶片扫描台的第一表面上，第二干涉仪镜设置在短行晶片扫描台的第二表面上;以及控制系统，被配置为使用两个第二干涉仪来确定第一干涉仪镜的形状误差 或更多的来自与第一干涉仪镜相关联的两个或更多个干涉仪的干涉仪测量，以及使用来自与第二干涉仪镜相关联的两个或更多个干涉仪的两个或更多个干涉仪测量的第二干涉仪镜的形状误差。
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Patent Agency Ranking
公开(公告)号：US20140374611A1
公开(公告)日：2014-12-25
申请号：US14309393
申请日：2014-06-19
Applicant: KLA-Tencor Corporation
Inventor： Layton Hale , Francis Chilese , Qiang Q. Zhang
CPC classification number: H05G2/008 , G01N21/95 , G01N21/9501 , G01N21/956 , G03F7/70033
Abstract: The generation of EUV light includes rotating a cylinder at least partially coated with a plasma-forming target material, directing pulsed illumination to a first set of helically-arranged spots traversing a material-coated portion of the rotating cylinder in a first direction and directing pulsed illumination to a second set of helically-arranged spots traversing the material-coated portion of the rotating cylinder in a second direction, the pulsed illumination being suitable for exciting the plasma-forming target material.
Abstract translation: EUV灯的产生包括使至少部分地涂覆有等离子体形成目标材料的圆筒旋转，将脉冲照明引导到在第一方向上穿过旋转圆柱体的材料涂覆部分的第一组螺旋排列的点，并且引导脉冲 照射到在第二方向上穿过旋转圆筒的材料涂覆部分的第二组螺旋排列的点，脉冲照明适合于激发等离子体形成目标材料。
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公开(公告)号：US09544984B2
公开(公告)日：2017-01-10
申请号：US14335442
申请日：2014-07-18
Applicant: KLA-Tencor Corporation
Inventor： Alexander Bykanov , Oleg Khodykin , Daniel C. Wack , Konstantin Tsigutkin , Layton Hale , Joseph Walsh , Frank Chilese , Rudy F. Garcia , Brian Ahr
IPC: G01J1/42 , H05G2/00 , G01J1/16 , G01N21/956 , G03F7/20
CPC classification number: H05G2/008 , G01J1/16 , G01N21/956 , G01N2021/95676 , G01N2201/061 , G03F1/84 , G03F7/70033 , G03F7/70891 , H05H2240/00
Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.
Abstract translation: EUV光源包括可旋转的圆柱对称元件，其具有涂覆有等离子体形成目标材料的表面;驱动激光源，被配置为产生足以通过激发等离子体产生EUV光的一个或多个激光脉冲 等离子体形成目标材料，一组聚焦光学元件，其被配置为将一个或多个激光脉冲聚焦到可旋转的圆柱形对称元件的表面上;一组收集光学器件，被配置为接收从所产生的等离子体发出的EUV光，并进一步配置 将照明引导到中间焦点，以及气体管理系统，其包括被配置为将等离子体形成目标材料供应到可旋转的圆柱对称元件的表面的气体供应子系统。
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公开(公告)号：US08963110B2
公开(公告)日：2015-02-24
申请号：US14309393
申请日：2014-06-19
Applicant: KLA-Tencor Corporation
Inventor： Layton Hale , Francis Chilese , Qiang Q. Zhang
CPC classification number: H05G2/008 , G01N21/95 , G01N21/9501 , G01N21/956 , G03F7/70033
Abstract: The generation of EUV light includes rotating a cylinder at least partially coated with a plasma-forming target material, directing pulsed illumination to a first set of helically-arranged spots traversing a material-coated portion of the rotating cylinder in a first direction and directing pulsed illumination to a second set of helically-arranged spots traversing the material-coated portion of the rotating cylinder in a second direction, the pulsed illumination being suitable for exciting the plasma-forming target material.
Abstract translation: EUV灯的产生包括使至少部分地涂覆有等离子体形成目标材料的圆筒旋转，将脉冲照明引导到在第一方向上穿过旋转圆柱体的材料涂覆部分的第一组螺旋排列的点，并且引导脉冲 照射到在第二方向上穿过旋转圆筒的材料涂覆部分的第二组螺旋排列的点，脉冲照明适合于激发等离子体形成目标材料。
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公开(公告)号：US20150076359A1
公开(公告)日：2015-03-19
申请号：US14335442
申请日：2014-07-18
Applicant: KLA-Tencor Corporation
Inventor： Alexander Bykanov , Oleg Khodykin , Daniel C. Wack , Konstantin Tsigutkin , Layton Hale , Joseph Walsh , Frank Chilese
IPC: H05G2/00 , G01N21/956 , G03F7/20 , G01J1/16
CPC classification number: H05G2/008 , G01J1/16 , G01N21/956 , G01N2021/95676 , G01N2201/061 , G03F1/84 , G03F7/70033 , G03F7/70891 , H05H2240/00
Abstract: An EUV light source includes a rotatable, cylindrically-symmetric element having a surface coated with a plasma-forming target material, a drive laser source configured to generate one or more laser pulses sufficient to generate EUV light via formation of a plasma by excitation of the plasma-forming target material, a set of focusing optics configured to focus the one or more laser pulses onto the surface of the rotatable, cylindrically-symmetric element, a set of collection optics configured to receive EUV light emanated from the generated plasma and further configured to direct the illumination to an intermediate focal point, and a gas management system including a gas supply subsystem configured to supply plasma-forming target material to the surface of the rotatable, cylindrically-symmetric element.
Abstract translation: EUV光源包括可旋转的圆柱对称元件，其具有涂覆有等离子体形成目标材料的表面;驱动激光源，被配置为产生足以通过激发等离子体产生EUV光的一个或多个激光脉冲 等离子体形成目标材料，一组聚焦光学元件，其被配置为将一个或多个激光脉冲聚焦到可旋转的圆柱形对称元件的表面上;一组收集光学器件，被配置为接收从所产生的等离子体发出的EUV光，并进一步配置 将照明引导到中间焦点，以及气体管理系统，其包括被配置为将等离子体形成目标材料供应到可旋转的圆柱对称元件的表面的气体供应子系统。
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7.发明申请Linear Stage and Metrology Architecture for Reflective Electron Beam Lithography 有权反射电子束光刻的线性阶段和计量结构公开(公告)号：US20130342827A1
公开(公告)日：2013-12-26
申请号：US13914351
申请日：2013-06-10
Applicant: KLA-Tencor Corporation
Inventor： Upendra Ummethala , Layton Hale , Josh Clyne , Samir Nayfeh , Mark Williams , Joseph A. DiRegolo , Andrew Wilson
CPC classification number: G01B11/02 , B82Y10/00 , B82Y40/00 , G01B11/14 , G01B21/16 , G03F7/70716 , G03F7/70775 , G03F7/70816 , H01J37/20 , H01J37/244 , H01J37/3174 , H01J2237/2445 , H01J2237/24578 , H01J2237/30433 , H01J2237/30438
Abstract: A stage metrology suitable for REBL includes an interferometer stage metrology system configured to measure the position and rotation of a short-stroke wafer scanning stage, wherein the interferometer metrology system includes two or more interferometers for each axis of measurement, wherein a first interferometer mirror is disposed on a first surface of the short-stroke wafer scanning stage and a second interferometer mirror is disposed on a second surface of the short-stroke wafer scanning stage, and a control system configured to determine a shape error for the first interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the first interferometer mirror and a shape error for the second interferometer mirror using two or more interferometer measurements from the two or more interferometers associated with the second interferometer mirror.
Abstract translation: 适用于REBL的舞台计量包括配置成测量短行晶片扫描台的位置和旋转的干涉仪台计量系统，其中干涉仪计量系统包括用于每个测量轴的两个或更多个干涉仪，其中第一干涉仪镜是 设置在短冲程晶片扫描台的第一表面上，第二干涉仪镜设置在短行晶片扫描台的第二表面上;以及控制系统，被配置为使用两个第二干涉仪来确定第一干涉仪镜的形状误差 或更多的来自与第一干涉仪镜相关联的两个或更多个干涉仪的干涉仪测量，以及使用来自与第二干涉仪镜相关联的两个或更多个干涉仪的两个或更多个干涉仪测量的第二干涉仪镜的形状误差。
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