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1.发明申请公开(公告)号：US20190330738A1
公开(公告)日：2019-10-31
申请号：US16507930
申请日：2019-07-10
IPC分类号： C23C16/455 , C23C16/44 , H01L21/02
摘要： According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a reaction tube; a substrate retainer; a cylindrical portion provided inside the reaction tube and concentric with the reaction tube and comprising a process chamber; a gas supply part in an annular gap between the reaction tube and the cylindrical portion; a gas supply port through which the gas supply part communicates with the process chamber; a first gas exhaust port provided at the cylindrical portion, through which the gap communicates with the process chamber; an outlet connected to the reaction tube at a location lower than the first gas exhaust port and opposite to the gas supply port; and a second gas exhaust port provided at the cylindrical portion at a location lower than the first gas exhaust port and aligned with a same orientation as the outlet.
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2.发明申请公开(公告)号：US20190096738A1
公开(公告)日：2019-03-28
申请号：US16137879
申请日：2018-09-21
IPC分类号： H01L21/687 , H01L21/67 , C23C16/455 , C23C16/458 , C23C16/34
摘要： A substrate processing apparatus includes: a reaction tube including inner and outer tubes installed to surround the inner tube; a substrate holder for holding substrates in a vertical direction; gas nozzles installed in a gap between the outer and inner tubes and having supply holes from which a gas is supplied toward an inlet port of the inner tube; a gas supply system for feeding gases to the reaction tube though the gas nozzles; an outlet port formed in the inner tube to flow out the gas; a discharge port for discharging the gas; a discharge part for discharging the gas staying in the gap from the discharge port; and a controller for controlling the gas supply system to supply a precursor gas and an inert gas and for causing the discharge part to purge the gas staying in the gap with the inert gas.
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公开(公告)号：US20240084448A1
公开(公告)日：2024-03-14
申请号：US18514494
申请日：2023-11-20
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/52 , H01L21/0217
摘要： Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.
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公开(公告)号：US20210202232A1
公开(公告)日：2021-07-01
申请号：US17204201
申请日：2021-03-17
发明人： Keigo NISHIDA , Takashi OZAKI , Takafumi SASAKI
IPC分类号： H01L21/02 , C23C16/52 , C23C16/455 , H01L21/67
摘要： Described herein is a technique capable of improving a controllability of a thickness distribution of an oxide film formed on a surface of a substrate. According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) forming a first oxide layer by supplying an oxygen-containing gas and an hydrogen-containing gas to a heated substrate at a first pressure less than an atmospheric pressure and by oxidizing a surface of the substrate; and (b) forming a second oxide layer by supplying the oxygen-containing gas and the hydrogen-containing gas to the heated substrate at a second pressure less than the atmospheric pressure and different from the first pressure and by oxidizing the surface of the substrate on which the first oxide layer is formed.
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公开(公告)号：US20200098653A1
公开(公告)日：2020-03-26
申请号：US16529501
申请日：2019-08-01
摘要： There is provided a technique of manufacturing a semiconductor device, including: by a processing performing part, processing a substrate based on setting parameter corresponding to process recipe stored in a controller; by a first transceiver, transmitting measurement value of the processing performing part to the controller; by the controller, causing a learning part to perform machine learning process on the measurement value received from the first transceiver as learning data; by the controller, after the act of causing the learning part to perform the machine learning process, generating update data for updating the setting parameter; by the controller, causing an arithmetic part to generate update parameter for updating the setting parameter based on the update data; by the controller, causing a second transceiver to transmit the update parameter to the first transceiver; and by the updating part, updating the setting parameter based on the update parameter received from the controller.
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公开(公告)号：US20200066551A1
公开(公告)日：2020-02-27
申请号：US16549492
申请日：2019-08-23
IPC分类号： H01L21/67
摘要： There is provided a technique that includes a substrate processing apparatus, comprising a process chamber having a cylindrical space configured to accommodate a substrate; and a plurality of nozzles communicating with a gas supply pipe and discharging processing gas in the process chamber, the process chamber includes a cylindrical reaction tube; a cylindrical manifold; and a lid, the lid includes a protection plate; and an introduction hole, the manifold includes a protection liner on an inner face of the manifold such that a second gap is formed between the manifold and the protection liner, the first gap being formed to allow the purge gas flowing toward the manifold to be deflected by the inner face of the manifold and to flow into the second gap.
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公开(公告)号：US20190255576A1
公开(公告)日：2019-08-22
申请号：US16280874
申请日：2019-02-20
发明人： Koei KURIBAYASHI , Kenji KAMEDA , Tsukasa KAMAKURA , Takeo HANASHIMA , Hiroaki HIRAMATSU , Shinya EBATA , Hiroto YAMAGISHI , Sadao HISAKADO , Takafumi SASAKI , Takatomo YAMAGUCHI , Shuhei SAIDO
摘要： There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).
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公开(公告)号：US20230227979A1
公开(公告)日：2023-07-20
申请号：US18186333
申请日：2023-03-20
IPC分类号： C23C16/455 , C23C16/44 , H01L21/02 , C23C16/52 , C23C16/40
CPC分类号： C23C16/45565 , C23C16/45519 , C23C16/4412 , H01L21/02164 , H01L21/02271 , C23C16/52 , C23C16/402
摘要： There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.
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公开(公告)号：US20220403510A1
公开(公告)日：2022-12-22
申请号：US17892423
申请日：2022-08-22
摘要： Described herein is a technique capable of improving a film thickness uniformity on a surface of a wafer whereon a film is formed. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a process gas nozzle configured to supply a process gas into the process chamber; an inert gas nozzle configured to supply an inert gas into the process chamber while a concentration of the process gas at the center of the substrate is higher than a concentration required for processing the substrate; and an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; wherein the process gas nozzle and the inert gas nozzle are disposed beside the edge of substrate with a predetermined distance therebetween corresponding to an angle of circumference of 90 to 180 degrees.
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10.发明申请公开(公告)号：US20220307137A1
公开(公告)日：2022-09-29
申请号：US17694134
申请日：2022-03-14
IPC分类号： C23C16/455 , C23C16/44
摘要： There is provided a technique capable of uniformizing a flow of a gas discharged from a discharger by reducing a pressure difference in a substrate arrangement region of a process chamber. According to one aspect of the technique, there is provided a reaction tube in which a process chamber is provided and including an adjusting structure configured to suppress a flow of a gas discharged from a discharger, wherein a gas supplier is provided at one end of the process chamber and the discharger is provided at the other end of the process chamber, and a flow of the gas from the gas supplier to the discharger in the process chamber is adjusted by the adjusting structure such that the flow of the gas discharged from the discharger is uniformized.
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