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公开(公告)号：US20230282505A1
公开(公告)日：2023-09-07
申请号：US17940135
申请日：2022-09-08
IPC分类号： H01L21/677 , H01L21/67 , H01L21/687 , F27B17/00
CPC分类号： H01L21/67742 , F27B17/0025 , H01L21/67196 , H01L21/67201 , H01L21/68764
摘要： There is provided a technique for suppressing interference between processes respectively performed in the plurality of reactors. According to one aspect thereof, a substrate processing apparatus includes: a first vessel including a transfer port and a process chamber; a second vessel adjacent to the first vessel and communicating with the first vessel via the transfer port; a lid for closing the transfer port; a seal arranged between the transfer port and the lid; and a controller for controlling the inner pressure of the first vessel to be lower than the inner pressure of the second vessel with the transfer port closed by the lid while the substrate is processed in the process chamber and the inner pressure of the first vessel to be higher than the inner pressure of the second vessel after the substrate is processed and before the first vessel comes into communication with the second vessel.
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公开(公告)号：US20230073084A1
公开(公告)日：2023-03-09
申请号：US17987456
申请日：2022-11-15
发明人： Naofumi OHASHI , Hidehiro YANAI , Tadashi TAKASAKI
IPC分类号： C23C16/455 , H01L21/67 , C23C16/46 , C23C16/458 , H01L21/687
摘要： A technique capable of improving uniformity of characteristics of a film formed on a surface of a substrate by a rotary type apparatus. According to one aspect a substrate processing apparatus is provided including: a process chamber for processing a substrate; a substrate support in the process chamber and including a plurality of placement parts for placing the substrate; a rotating part to rotate the substrate support; a heater provided below or within the substrate support; a first nozzle above the placement parts so as to face the placement parts and including a first portion with no hole to thermally decompose a process gas; and a second nozzle above the placement parts and parallel with the first nozzle and including a second portion with no hole to thermally decompose the process gas; and controller for controlling a positional relationship between the substrate and first nozzle via the rotating part.
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公开(公告)号：US20230068877A1
公开(公告)日：2023-03-02
申请号：US17897275
申请日：2022-08-29
发明人： Naofumi OHASHI
IPC分类号： H01L21/311 , H01J37/32
摘要： There is provided a technique that includes forming a modified film by supplying a modifying gas to modify an unmasked deposited film on a substrate; and removing the modified film, including supplying a removal gas activated by plasma and supplying a protective-film-forming gas at least at the same time.
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公开(公告)号：US20230064868A1
公开(公告)日：2023-03-02
申请号：US17887921
申请日：2022-08-15
发明人： Naofumi OHASHI , Teruo YOSHINO , Masanori NAKAYAMA
IPC分类号： H01L21/687
摘要： There is provided a technique capable of preventing a diffusion of a film-forming gas through a through-hole. According to one aspect thereof, there is provided a substrate processing apparatus including: a substrate mounting table; through-holes at the substrate mounting table; lift pins; an elevator capable of elevating or lowering the substrate mounting table or the lift pins or both; and a controller capable of controlling the elevator so as to perform: (a) placing a substrate on the lift pins protruding from a surface of the substrate mounting table through the through-holes; (b) placing the substrate on the surface of the substrate mounting table by moving the substrate mounting table or the lift pins or both; (c) stopping the substrate mounting table at a substrate processing position; and (d) moving the lift pins to positions in the through-holes at which the lift pins are out of contact with the substrate.
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5.发明申请公开(公告)号：US20220115254A1
公开(公告)日：2022-04-14
申请号：US17556307
申请日：2021-12-20
IPC分类号： H01L21/677 , H01L21/67
摘要： Described herein is a technique capable of optimizing a timing of a maintenance process. According to one aspect of the technique of the present disclosure, there is provided a method of manufacturing a semiconductor device including: (a) transferring a substrate to a process chamber, and performing a substrate processing; (b) receiving maintenance reservation information of the process chamber wherein a maintenance timing at which the process chamber enters into a maintenance enable state is determined by the maintenance reservation information; and (c) continuously performing the substrate processing after the maintenance reservation information is received in (b) until the substrate processing in the process chamber related to the maintenance reservation information is completed, stopping one or more substrates including the substrate from being transferred into the process chamber, and thereafter setting the process chamber to the maintenance enable state.
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公开(公告)号：US20220093447A1
公开(公告)日：2022-03-24
申请号：US17479436
申请日：2021-09-20
IPC分类号： H01L21/687 , C23C16/455 , H01L21/205
摘要： Some embodiments of the present disclosure provide a technique capable of reducing an amount of deposits on a back surface of a rotary table. According to one aspect thereof, there is provided a technique that includes: a process chamber provided with process regions; a rotary table configured to rotate a substrate about a point outside the substrate such that the substrate sequentially passes through the process regions; and a rotator configured to rotate the rotary table, wherein the process regions include: a first region in which a process gas is supplied; and a second region in which an inert gas is supplied, and wherein a space corresponding to the second region below the rotary table is configured such that a pressure at the space corresponding to the second region below the rotary table is higher than a pressure at a space corresponding to the first region below the rotary table.
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公开(公告)号：US20210395887A1
公开(公告)日：2021-12-23
申请号：US17208306
申请日：2021-03-22
IPC分类号： C23C16/458 , H01L21/02 , C23C16/40 , C23C16/34
摘要： There is provided a technique that includes: a process chamber in which a substrate is processed; a gas supplier configured to supply a gas into the process chamber; at least one substrate mounting table disposed in the process chamber and including a substrate mounting surface on which the substrate is mounted; and an arm configured to transfer the substrate to the substrate mounting surface while supporting a lower surface of the substrate, wherein the arm includes a support that includes an inclination and is configured to support the substrate.
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公开(公告)号：US20210098251A1
公开(公告)日：2021-04-01
申请号：US16826844
申请日：2020-03-23
IPC分类号： H01L21/02 , C23C16/34 , C23C16/458 , C23C16/44 , H01L21/687
摘要： There is provided a technique that includes: substrate mounting plate where substrates are arranged circumferentially; rotator rotating the substrate mounting plate; gas supply structure disposed above the substrate mounting plate from center to outer periphery thereof; gas supplier including the gas supply structure and controlling supply amount of gas supplied from the gas supply structure; gas exhaust structure installed above the substrate mounting plate at downstream side of the gas supply structure in rotation direction; gas exhauster including the gas exhaust structure and controlling exhaust amount of gas exhausted from the gas exhaust structure; and gas main component amount controller including the gas supplier and the gas exhauster and controlling gas main component amount in the gas supplied from the gas supply structure to the substrates and the gas main component amount in the gas supplied to the substrates from the center to the outer periphery of the mounting plate.
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公开(公告)号：US20190393057A1
公开(公告)日：2019-12-26
申请号：US16560266
申请日：2019-09-04
IPC分类号： H01L21/67 , H01L21/677 , C23C16/52 , C23C16/50 , C23C16/24 , H01L21/687
摘要： A substrate processing apparatus includes: a single frequency process chamber installed inside a process module and for processing a substrate on which an insulating film is formed; a two-frequency process chamber installed adjacent to the single frequency process chamber inside the process module and for processing the substrate processed in the single frequency process chamber; a gas supply part configured to supply a silicon-containing gas containing at least silicon and an impurity to each of the process chambers; a plasma generation part connected to each of the process chambers; an ion control part connected to the two-frequency process chamber; a substrate transfer part installed inside the process module and configured to transfer the substrate between the single frequency process chamber and the two-frequency process chamber; and a controller configured to control at least the gas supply part, the plasma generation part, the ion control part, and the substrate transfer part.
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公开(公告)号：US20190221468A1
公开(公告)日：2019-07-18
申请号：US16367398
申请日：2019-03-28
发明人： Naofumi OHASHI , Kazuyuki TOYODA , Shun MATSUI
IPC分类号： H01L21/687 , H01J37/32
CPC分类号： H01L21/68771 , H01J37/32082 , H01J37/32192 , H01J37/32422 , H01J37/32541 , H01J37/32568 , H01L21/68764
摘要： Described herein is a technique capable of adjusting a plasma distribution of a processing region. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a substrate support configured to support a substrate; a dividing structure defining a processing region in a space facing the substrate support; a gas supply unit supplying a processing gas into the processing region; and a plasma generating unit generating an active species by plasmatizing the processing gas supplied into the processing region by the gas supply unit, and to control an activity of the active species independently for each portion of the processing region when plasmatizing the processing gas, wherein the plasma generating unit includes: a high frequency power supply unit installed in each portion of the processing region; and an impedance adjusting unit installed to correspond to the high frequency power supply unit.
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