公开(公告)号：US09680047B2

公开(公告)日：2017-06-13

申请号：US14437087

申请日：2012-12-18

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58

CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

公开(公告)号：US20150280048A1

公开(公告)日：2015-10-01

申请号：US14437087

申请日：2012-12-18

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18

CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

Abstract translation: 本发明的一个实施方案涉及通过使用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，并且要解决的技术问题是使无定形 硅薄膜，其通过电子束形成在低价基板上，以便通过具有高结晶产率容易地获得高质量并在低温下进行处理。 为此，本发明的一个实施例提供一种利用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，该方法包括： 制备底物的步骤; 1类非晶硅层沉积步骤，用于在衬底上形成1型非晶硅层; 1型非晶硅层沉积步骤，用于在1 +非晶硅层上形成1型非晶硅层; 吸收层形成步骤，用于通过将线性电子束照射到1型非晶硅层并因此使1型非晶层和1型非晶硅层结晶而形成吸收层; 用于在吸收层上形成2型非晶硅层的2型非晶硅层沉积步骤; 以及发射极层形成步骤，用于通过将线性电子束照射到2型非晶硅层并因此使2型非晶硅层结晶而形成发射极层，其中线性电子束从上述类型1和2型非晶硅 层，其以预定区域往复运动的线性扫描方式。

公开(公告)号：US10069031B2

公开(公告)日：2018-09-04

申请号：US15592421

申请日：2017-05-11

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58 ,  H01L31/028

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

公开(公告)号：US20170250303A1

公开(公告)日：2017-08-31

申请号：US15592421

申请日：2017-05-11

Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

IPC: H01L31/18 ,  H01L31/028

CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.