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    METHOD FOR PREPARING SOLID ELECTROLYTE FOR SOLID OXIDE FUEL CELL, AND METHOD FOR PREPARING UNIT CELL
    1.
    发明申请
    METHOD FOR PREPARING SOLID ELECTROLYTE FOR SOLID OXIDE FUEL CELL, AND METHOD FOR PREPARING UNIT CELL 审中-公开
    固体氧化物燃料电池固体电解质的制备方法及制备单元电池的方法

    公开(公告)号：US20160079623A1

    公开(公告)日：2016-03-17

    申请号：US14787446

    申请日：2013-08-20

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Ho Sung Kim ,  Seong Jae Boo ,  Chae Hwan Jeong ,  Ik Hyun Oh ,  Hyeon Jong Jeon ,  Min Young Kim

    IPC: H01M8/12

    CPC classification number: H01M8/1246 ,  H01M8/1253 ,  H01M2008/1293 ,  H01M2300/0071 ,  H01M2300/0077 ,  Y02E60/525 ,  Y02P70/56

    Abstract: Provided are a method for preparing a solid electrolyte material for a cheap solid oxide fuel cell capable of implementing high ion conductivity at a medium-low temperature of 800° C. or lower, and a method for preparing a unit cell of a solid oxide fuel cell by using the same. The method for preparing a solid electrolyte material for a solid oxide fuel cell comprises: providing a starting material comprising ytterbium nitrate [Yb(NO3)3.H2O], scandium nitrate [Sc(NO3)3.H2O] and zirconium oxychloride [ZrOCl2.H2O] in a ratio of 6:4:90 by mol; forming a mixture metal salt aqueous solution by dissolving the starting material; forming a precursor by mixing the mixture metal salt aqueous solution and a chelating agent and coprecipitating the obtained mixture; washing the precursor by providing ultrapure water multiple times; filtering the washed precursor by using a vacuum filtration apparatus; and forming a solid electrolyte powder by heat treating the filtered precursor.

    Abstract translation: 提供一种在800℃以下的中低温下能够实现高离子传导性的便宜的固体氧化物型燃料电池用固体电解质材料的制造方法，以及制备固体氧化物燃料的单电池的方法 细胞使用相同。 制备用于固体氧化物燃料电池的固体电解质材料的方法包括：提供包含硝酸镱[Yb（NO 3）3·H 2 O]，硝酸钪[Sc（NO 3）3·H 2 O]和氧氯化锆[ZrOCl 2]的原料。 H 2 O]，其比例为6:4:90; 通过溶解原料形成混合金属盐水溶液; 通过混合所述混合金属盐水溶液和螯合剂形成前体并共沉淀所得混合物; 通过提供超纯水多次洗涤前体; 使用真空过滤装置过滤洗涤的前体; 并通过热处理过滤的前体形成固体电解质粉末。

    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam
    2.
    发明授权
    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam 有权

    公开(公告)号：US09680047B2

    公开(公告)日：2017-06-13

    申请号：US14437087

    申请日：2012-12-18

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58

    CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM
    4.
    发明申请
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM 有权
    使用线性电子束结晶大面积无定形硅薄膜的方法制造多晶硅薄膜太阳能电池的方法

    公开(公告)号：US20150280048A1

    公开(公告)日：2015-10-01

    申请号：US14437087

    申请日：2012-12-18

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18

    CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    Abstract translation: 本发明的一个实施方案涉及通过使用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，并且要解决的技术问题是使无定形 硅薄膜，其通过电子束形成在低价基板上，以便通过具有高结晶产率容易地获得高质量并在低温下进行处理。 为此，本发明的一个实施例提供一种利用线性电子束使大面积非晶硅薄膜结晶的方法制造多晶硅薄膜太阳能电池的方法，该方法包括： 制备底物的步骤; 1类非晶硅层沉积步骤，用于在衬底上形成1型非晶硅层; 1型非晶硅层沉积步骤，用于在1 +非晶硅层上形成1型非晶硅层; 吸收层形成步骤，用于通过将线性电子束照射到1型非晶硅层并因此使1型非晶层和1型非晶硅层结晶而形成吸收层; 用于在吸收层上形成2型非晶硅层的2型非晶硅层沉积步骤; 以及发射极层形成步骤，用于通过将线性电子束照射到2型非晶硅层并因此使2型非晶硅层结晶而形成发射极层，其中线性电子束从上述类型1和2型非晶硅 层，其以预定区域往复运动的线性扫描方式。

    MEDICAL MASK DEVICE WHICH USES OPTICAL FIBERS
    5.
    发明申请
    MEDICAL MASK DEVICE WHICH USES OPTICAL FIBERS 有权
    使用光纤的医疗屏蔽设备

    公开(公告)号：US20140379053A1

    公开(公告)日：2014-12-25

    申请号：US14358598

    申请日：2012-11-16

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Seong Jae Boo ,  Hye Jeong Jeong ,  Sung Min Joo ,  Won Taek Han

    IPC: A61N5/06

    CPC classification number: A61N5/0616 ,  A61N5/0625 ,  A61N2005/063 ,  A61N2005/0647 ,  A61N2005/067

    Abstract: Disclosed is a medical mask apparatus using optical fibers which can selectively project a laser beam to an entire treated portion or a local portion of skin. A medical mask apparatus using optical fibers for projecting a fine laser beam to the skin to activate skin cells and expedite circulation of blood in the skin includes: a laser light source generator for generating and supplying a laser beam having a predetermined wavelength band; a plurality of optical fibers branched from the laser light source generator; and a mask body having a cover portion having a predetermined area such that the cover portion covers a portion of a face and in which a portion of a distal end of the optical fiber is exposed along the entire cover. An electro-optic material is coated on an output end of the optical fiber such that an output of the output end of the optical fiber is controlled by an external electrical signal, and the output end of the optical fiber has a diameter smaller than that of an input end of the optical fiber connected to the laser light source generator such that fine projection is allowed.

    Abstract translation: 公开了一种使用光纤的医疗用掩模装置，其可以选择性地将激光束投射到整个处理部分或局部皮肤部分。 一种使用用于将细小激光束投射到皮肤以激活皮肤细胞并加快皮肤中血液循环的光纤的医疗用面具装置，包括：激光光源发生器，用于产生并提供具有预定波长带的激光束; 从激光光源发生器分支的多根光纤; 以及掩模体，其具有具有预定面积的盖部，使得所述盖部覆盖面部的一部分，并且所述光纤的远端的一部分沿着所述整个盖露出。 电光材料被涂覆在光纤的输出端，使得光纤的输出端的输出由外部电信号控制，并且光纤的输出端的直径小于 连接到激光光源发生器的光纤的输入端允许精细投影。

    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam
    6.
    发明授权
    Method for manufacturing polycrystalline silicon thin-film solar cells by means method for crystallizing large-area amorphous silicon thin film using linear electron beam 有权

    公开(公告)号：US10069031B2

    公开(公告)日：2018-09-04

    申请号：US15592421

    申请日：2017-05-11

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/068 ,  C23C14/58 ,  H01L31/028

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM
    7.
    发明申请
    METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING LARGE-AREA AMORPHOUS SILICON THIN FILM USING LINEAR ELECTRON BEAM 审中-公开

    公开(公告)号：US20170250303A1

    公开(公告)日：2017-08-31

    申请号：US15592421

    申请日：2017-05-11

    Applicant: KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY

    Inventor： Chae Hwan Jeong ,  Sun Hwa Lee ,  Sang Ryu ,  Ho Sung Kim ,  Seong Jae Boo

    IPC: H01L31/18 ,  H01L31/028

    CPC classification number: H01L31/182 ,  C23C14/5806 ,  H01L31/028 ,  H01L31/068 ,  H01L31/1872 ,  H05K999/99 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a large-area amorphous silicon thin film using a linear electron beam, and the technical problem to be solved is to crystallize an amorphous silicon thin film, which is formed on a low-priced substrate, by means of an electron beam so as for same to easily be of high quality by having high crystallization yield and to be processed at a low temperature. To this end, one embodiment of the present invention provides a method of manufacturing polycrystalline silicon thin-film solar cell by means of a method for crystallizing a large-area amorphous silicon thin film using a linear electron beam, the method comprising: a substrate preparation step for preparing a substrate; a type 1+ amorphous silicon layer deposition step for forming a type 1+ amorphous silicon layer on the substrate; a type 1 amorphous silicon layer deposition step for forming a type 1 amorphous silicon layer on the type 1+ amorphous silicon layer; an absorption layer formation step for forming an absorption layer by radiating a linear electron beam to the type 1 amorphous silicon layer and thus crystallizing the type 1 amorphous layer and the type 1+ amorphous silicon layer; a type 2 amorphous silicon layer deposition step for forming a type 2 amorphous silicon layer on the absorption layer; and an emitter layer formation step for forming an emitter layer by radiating a linear electron beam to the type 2 amorphous silicon layer and thus crystallizing the type 2 amorphous silicon layer, wherein the linear electron beam is radiated from above type 1 and type 2 amorphous silicon layers in a linear scanning manner in which to reciprocate in a predetermined area.

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