Abstract:
A method of manufacturing a thin-film transistor is provided, including preparing ink including a solution in which a graphene oxide, a reduced graphene oxide, or a combination thereof is dispersed, forming the ink on a substrate in the form of a pattern, and forming a source electrode and a drain electrode that are positioned at edges of the pattern and a semiconductor channel positioned between the electrodes by a coffee-ring effect in the ink by using the graphene oxide, the reduced graphene oxide, or the combination thereof within the formed pattern.
Abstract:
Disclosed are a method of manufacturing a reduced graphene oxide pattern which includes forming a graphene oxide pattern on a substrate and providing the graphene oxide pattern with a white light pulse to reduce the graphene oxide, a reduced graphene oxide obtained by the method, and an electronic device and a thin film transistor including the reduced graphene oxide.
Abstract:
A device for forming a roll-to-roll pattern includes: a plurality of rollers, that are separated from each other, for transferring a substrate in one direction; a pattern former provided on the substrate between neighboring rollers from among the plurality of rollers, and forming a pattern on the substrate; an absorber facing the pattern former with the substrate therebetween, and absorbing the substrate; a light irradiator neighboring the pattern former and irradiating light to the pattern; and a controller for controlling the roller, the pattern former, the absorber, and the light irradiator so that the pattern may be formed on the substrate and light may be irradiated to the pattern.