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公开(公告)号:US10976224B2
公开(公告)日:2021-04-13
申请号:US15753115
申请日:2016-08-24
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor: Hojeong Jeon , Indong Jun , Kangwon Lee , Hyung-Seop Han , Jimin Park , Myoung-Ryul Ok , Yu Chan Kim , Hyun Kwang Seok
Abstract: A cell patterning material, a method of preparing the cell patterning material, a cell patterning method using the cell patterning material, and a biosensor including patterned cells obtained by using the cell patterning method are provided. According to the present disclosure, cells may be conveniently and efficiently patterned and the time for applying external stimulation for patterning may be controlled. In addition, the patterned cells may have an excellent proliferation rate and excellent differentiation efficiency, and may be re-patterned in a different direction, and High-throughput screening using the patterned cells is possible.
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公开(公告)号:US11738123B2
公开(公告)日:2023-08-29
申请号:US16891195
申请日:2020-06-03
Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION
Inventor: Myoung-Ryul Ok , Jimin Park , Yu Chan Kim , Hyun Kwang Seok , Hyung-Seop Han , Hojeong Jeon , Hyunseon Seo , Jee-Wook Lee , Jin Kyung Jeon , Gayoung Jung , Jong Woong Park , Ji Hun Park
IPC: A61L31/16 , A61B17/86 , A61B17/80 , A61K9/00 , A61K33/00 , A61L31/02 , F16B35/04 , A61F2/28 , A61B17/00 , C25D11/00
CPC classification number: A61L31/16 , A61B17/80 , A61B17/8605 , A61B17/866 , A61F2/2846 , A61K9/0024 , A61K33/00 , A61L31/022 , F16B35/04 , A61B2017/00893 , C25D11/00
Abstract: Provided is an implant having a controlled generation rate of reactive oxygen species and a method of controlling generation of reactive oxygen species using the same. The implant having a controlled generation rate of reactive oxygen species according to the present invention includes a body formed of a metallic material and having a groove, a first filling metal filling one region of the groove, and a second filling metal filling the groove on the first filling metal, wherein the second filling metal has an ionization tendency different from that of the first filling metal.
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