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    BORON CARBIDE COMPOSITE AND PRODUCTION METHOD THEREFOR
    1.
    发明申请
    BORON CARBIDE COMPOSITE AND PRODUCTION METHOD THEREFOR 有权

    公开(公告)号：US20210269364A1

    公开(公告)日：2021-09-02

    申请号：US17184081

    申请日：2021-02-24

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sang Whan PARK ,  Mi Rae YOUM ,  SUNG IL YUN ,  Jun Hyung PARK

    IPC: C04B35/563 ,  C04B35/645

    Abstract: The present disclosure provides a boron carbide composite material having a novel composition with excellent mechanical properties, and a production method therefor. The boron carbide composite material has high fracture toughness and may be applied as a lightweight bulletproof ceramic material. The boron carbide composite material is a boron carbide/silicon carbide/titanium boride/graphite (B4C—SiC—TiB2—C) composite material. The composite material may overcome a technical limitation on increasing the fracture toughness of the boron carbide composite material, and may be produced as a high-density boron carbide composite material using a reactive hot-pressing sintering process at a relatively low temperature. The boron carbide composite material having excellent mechanical properties may be applied to general industrial wear-resistant parts and nuclear-power-related industrial parts, and particularly, may be actively used as a lightweight bulletproof material for personal use and for military aircraft including helicopters.

    METHOD FOR PRODUCING LARGE GRANULAR ALPHA-PHASE SILICON CARBIDE POWDERS WITH A HIGH-PURITY
    2.
    发明申请
    METHOD FOR PRODUCING LARGE GRANULAR ALPHA-PHASE SILICON CARBIDE POWDERS WITH A HIGH-PURITY 有权

    公开(公告)号：US20210163301A1

    公开(公告)日：2021-06-03

    申请号：US17105200

    申请日：2020-11-25

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sang Whan PARK ,  Mi Rae YOUM ,  SUNG IL YUN

    IPC: C01B32/97 ,  C01B32/977

    Abstract: The present disclosure provide a method for producing large granular high-purity α-phase silicon carbide powders using a silicon dioxide/carbon composite, the method including: producing a gel in which the carbonaceous compound is dispersed in a silicon dioxide network structure through a sol-gel process using starting materials including liquid phase silicon containing compounds and liquid phase carbonaceous compounds; subjecting the gel to first heat treatment to thermally decompose the carbon carbonaceous compound, thereby producing a silicon dioxide/carbon composite including nano-sized carbon particles; and subjecting the silicon dioxide/carbon composite to second heat treatment at a higher temperature than that of the first heat treatment to obtain large granular high-purity α-phase silicon carbide powders.

    METHOD FOR MANUFACTURING SiC POWDERS WITH HIGH PURITY
    3.
    发明申请
    METHOD FOR MANUFACTURING SiC POWDERS WITH HIGH PURITY 有权
    高纯度制备SiC粉末的方法

    公开(公告)号：US20130243682A1

    公开(公告)日：2013-09-19

    申请号：US13826521

    申请日：2013-03-14

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sang Whan PARK ,  Kyoung Sop HAN ,  Sung Ho YUN ,  Jin Oh YANG ,  Gyoung Sun CHO ,  Mi Rae YOUM ,  Yung Chul JO

    IPC: C01B31/36

    CPC classification number: C01B31/36 ,  C01B32/956

    Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.

    Abstract translation: 本发明公开了一种高纯度SiC粉末的制造方法，更具体地说，涉及一种以固相碳源为原料制造具有高纯度的SiC粉末的方法，所述SiC粉末是由由 金属硅和二氧化硅粉末，其中通过将气相硅源的组成改变为固相碳源摩尔比容易控制SiC粉末的尺寸和结晶相，并且其温度和时间为 热处理。

    POROUS SILICON DIOXIDE-CARBON COMPOSITE AND METHOD FOR PREPARING HIGH-PURITY GRANULAR BETA-PHASE SILICON CARBIDE POWDER WITH USING THE SAME
    4.
    发明申请
    POROUS SILICON DIOXIDE-CARBON COMPOSITE AND METHOD FOR PREPARING HIGH-PURITY GRANULAR BETA-PHASE SILICON CARBIDE POWDER WITH USING THE SAME 有权

    公开(公告)号：US20170081197A1

    公开(公告)日：2017-03-23

    申请号：US15075751

    申请日：2016-03-21

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sang Whan PARK ,  Mi Rae YOUM ,  Sung Il YOUN ,  Gyoung Sun CHO

    IPC: C01B31/36

    CPC classification number: C01B32/956

    Abstract: The present disclosure relates to porous silicon dioxide-carbon composites and a method for preparing high-purity β-phase silicon carbide granular powders using the same. More particularly, it relates to a method for preparing high-purity β-phase silicon carbide granular powders in accordance with a first step of preparing gel wherein carbon compounds are uniformly dispersed in silicon dioxide network structures generated by a sol-gel process using a silicon compound and a carbon compound in a liquid state as raw materials, a second step of preparing porous silicon dioxide-carbon composites, in which the carbon compounds are solidified, dried and then thermally treated to have a high specific area, and a third step of conducting both of a direct reaction between carbon and metallic silicon and a carbothermal reduction between carbon and silicon dioxide through a two-step treatment process of the prepared porous silicon dioxide-carbon composites powders with the added metallic silicon, wherein the average particle size, particle size distribution and purity of the silicon carbide powder can be adjusted by controlling a heating rate, a heat treatment temperature and time during the heat treatment process.

    METHOD FOR PREPARING ULTRAHIGH-PURITY SILICON CARBIDE POWDER
    5.
    发明申请
    METHOD FOR PREPARING ULTRAHIGH-PURITY SILICON CARBIDE POWDER 审中-公开
    制备超高纯度碳化硅粉末的方法

    公开(公告)号：US20170073233A1

    公开(公告)日：2017-03-16

    申请号：US15072724

    申请日：2016-03-17

    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

    Inventor： Sang Whan PARK ,  Mi Rae YOUM ,  Sung Il YOUN ,  Gyoung Sun CHO

    IPC: C01B31/36

    CPC classification number: C01B31/36 ,  C01B32/956 ,  C01P2004/51 ,  C01P2004/60

    Abstract: The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.

    Abstract translation: 本发明涉及一种制备超高纯度碳化硅粉末的方法，更具体地说，涉及通过制备其中硅化合物和碳化合物通过溶胶均匀分散的凝胶制备超高纯度碳化硅颗粒粉末的方法 使用液态硅化合物和不同纯度的固体或液态碳化合物作为原料，通过热解制备的凝胶制备二氧化硅 - 碳（SiO 2 -C）复合物，制备碳化硅 - 二氧化硅 - 碳（SiC-SiO2-C）复合粉末通过二次碳热还原制备的二氧化硅 - 碳复合材料，加入硅金属，然后通过热处理同时进行碳化和碳热还原，从而生长合成碳化硅 具有增加的碳化硅产率的颗粒。

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