公开(公告)号：US20180102624A1

公开(公告)日：2018-04-12

申请号：US15726486

申请日：2017-10-06

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon ,  Young In Jhon ,  BYUNGHYUCK MOON ,  MINAH SEO ,  Taikjin Lee ,  JAE HUN KIM ,  Young Tae Byun ,  Seok Lee

IPC: H01S3/11 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/094 ,  C01B32/921 ,  C01C3/08 ,  C09K11/67 ,  C09K11/02

CPC classification number: H01S3/1115 ,  B82Y20/00 ,  B82Y30/00 ,  C01B32/921 ,  C01C3/08 ,  C09K11/025 ,  C09K11/67 ,  H01S3/067 ,  H01S3/06712 ,  H01S3/06791 ,  H01S3/094003 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/11 ,  H01S3/1118 ,  H01S3/1608 ,  Y10S977/755 ,  Y10S977/814 ,  Y10S977/825 ,  Y10S977/951

Abstract: Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

公开(公告)号：US10804674B2

公开(公告)日：2020-10-13

申请号：US15726486

申请日：2017-10-06

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon ,  Young In Jhon ,  Byunghyuck Moon ,  Minah Seo ,  Taikjin Lee ,  Jae Hun Kim ,  Young Tae Byun ,  Seok Lee

IPC: H01S3/11 ,  H01S3/067 ,  H01S3/0941 ,  H01S3/094 ,  C01B32/921 ,  C09K11/67 ,  C09K11/02 ,  C01C3/08 ,  B82Y20/00 ,  H01S3/16 ,  B82Y30/00

Abstract: Provided are a saturable absorber including at least one material selected from a group of MXenes, and a Q-switching and mode-locked pulsed laser system using the same.

公开(公告)号：US10245557B2

公开(公告)日：2019-04-02

申请号：US15822079

申请日：2017-11-24

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon ,  Young In Jhon ,  Seok Lee

IPC: C03C15/00 ,  B01D67/00 ,  B01D71/02 ,  C01B32/194 ,  C01B32/198

Abstract: One aspect of the disclosed is to provide a method of manufacturing a nanoporous multilayer graphene membrane, including a first step of oxidizing a surface of a multilayer graphene membrane, a second step of reducing the oxidized surface of the multilayer graphene to carry out reductive etching such that oxidized carbon atoms on the surface are naturally and randomly dispersed, and a third step of repeatedly performing a series of the first and the second steps until nanopores penetrating the multilayer graphene are formed.

公开(公告)号：US10753804B2

公开(公告)日：2020-08-25

申请号：US16292328

申请日：2019-03-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young Min Jhon ,  Minah Seo ,  Young In Jhon

IPC: G01J5/02 ,  G01J5/12 ,  G01J5/34 ,  H01L35/26

Abstract: The present invention relates to a terahertz (THz) wave detecting sensor including a MXene material represented by the following Formula 1 as a sensing material: M(n+1)Xn,  [Formula 1] wherein, in Formula 1, M is at least one transition metal selected from early transition metal elements, X is at least one selected from C and N, and n is an integer selected from 1 to 3.

公开(公告)号：US10401320B2

公开(公告)日：2019-09-03

申请号：US15939721

申请日：2018-03-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Young In Jhon ,  Young Tae Byun ,  Yong Tae Kim ,  Young Min Jhon

IPC: G01N27/414 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L27/088 ,  H01L27/12

Abstract: Provided are a method of fabricating a 3-dimensional transistor sensor and the sensor and a sensor array thereof. The method of fabricating the 3-dimensional transistor sensor includes forming an insulating layer on a silicon substrate, forming a silicon layer on the insulating layer and forming a 3-dimensional silicon fin by etching the silicon layer, forming a source area and a source electrode at one end of the silicon fin, forming a drain area and a drain electrode at the other end the silicon fin, and forming a gate area at a center of the silicon fin, surrounding three surfaces of a gate with a gate insulating layer, forming a sensing gate layer configured to surround a portion of the gate insulating layer, and sealing an upper portion of the gate insulating layer excluding the sensing gate layer.