公开(公告)号：US10697073B2

公开(公告)日：2020-06-30

申请号：US15608082

申请日：2017-05-30

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong Lee ,  Young-Jin Ko ,  Young Joon Baik ,  Jong-Keuk Park ,  Kyeong Seok Lee ,  Inho Kim ,  Doo Seok Jeong

IPC: C25B11/04 ,  C23C16/56 ,  C23C16/503 ,  C23C16/32 ,  C25B11/02 ,  B82Y30/00 ,  B82Y40/00

Abstract: A method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake may include: forming a tungsten carbide nanoflake on a nanocrystalline diamond film by means of a chemical vapor deposition process in which hydrogen plasma is applied; and increasing activity of the tungsten carbide nanoflake to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake. Since an oxide layer and/or a graphene layer of a surface of tungsten carbide is removed by means of cyclic cleaning after tungsten carbide is formed, hydrogen evolution reaction (HER) activity of the tungsten carbide may be increased, thereby enhancing utilization as a catalyst electrode.

公开(公告)号：US09175387B2

公开(公告)日：2015-11-03

申请号：US13746185

申请日：2013-01-21

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong Lee ,  Hak Joo Lee ,  Young Joon Baik ,  Jong Keuk Park

IPC: C23C16/32 ,  H05H1/24 ,  C23C16/448

CPC classification number: C23C16/32 ,  C23C16/4488

Abstract: 2-dimensional nanostructured tungsten carbide which is obtained by control of the alignment of nanostructure during growth of tungsten carbide through control of the degree of supersaturation and a method for fabricating same are disclosed. The method for fabricating 2-dimensional nanostructured tungsten carbide employs a chemical vapor deposition process wherein a hydrogen plasma is applied to prepare 2-dimensional nanostructured tungsten carbide vertically aligned on a nanocrystalline diamond film. The chemical vapor deposition process wherein the hydrogen plasma is applied includes: disposing a substrate with the nanocrystalline diamond film formed thereon on an anode in a chamber, disposing a surface-carburized tungsten cathode above and at a distance from the substrate, and applying the hydrogen plasma into the chamber.

Abstract translation: 公开了通过控制碳酸钨生长期间纳米结构的取向控制而获得的二维纳米结构碳化钨，其过饱和度及其制造方法。 用于制造二维纳米结构碳化钨的方法采用化学气相沉积方法，其中施加氢等离子体以制备在纳米晶体金刚石膜上垂直对准的二维纳米结构碳化钨。 其中施加氢等离子体的化学气相沉积方法包括：将其上形成有纳米晶体金刚石膜的衬底设置在室中的阳极上，将表面渗碳的钨阴极在衬底之上和距离衬底处设置，并施加氢 等离子体进入室。

公开(公告)号：US09074281B2

公开(公告)日：2015-07-07

申请号：US13799419

申请日：2013-03-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Wook Seong Lee ,  Hak Joo Lee ,  Young Joon Baik ,  Jong Keuk Park

IPC: C23C16/27 ,  C23C16/02

CPC classification number: C23C16/27 ,  C23C16/02 ,  C23C16/0254 ,  C23C16/271 ,  C23C16/272

Abstract: Methods for fabricating uniform nanocrystalline diamond thin films with minimized voids are presented. These uniform nanocrystalline diamond thin films can be formed on any number of treated silicon oxide surfaces such as on hydrogen plasma treated surfaces of silicon oxide-coated substrates or on hydrocarbon plasma pre-treated surfaces of silicon oxide-coated substrates. It is believed that treating these surfaces results in maximizing electrostatic attraction between these treated surfaces with nanodiamond particles during a subsequent ultrasonic seeding of the nanodiamond particles onto these threated surfaces. This can result in the nanodiamond particles being substantially uniformly distributed and bound on the treated silicon oxide surface.

Abstract translation: 提出了制造具有最小空隙的均匀纳米晶金刚石薄膜的方法。 这些均匀的纳米晶体金刚石薄膜可以在任何数量的经处理的氧化硅表面上形成，例如在经氧化硅涂覆的基底的氢等离子体处理的表面上或在氧化硅涂覆的基底的烃等离子体预处理的表面上。 据信处理这些表面导致在纳米金刚石颗粒随后的超声波接种到这些处理的表面上之后，使纳米金刚石颗粒在这些处理的表面之间的静电吸引力最大化。 这可能导致纳米金刚石颗粒基本上均匀分布并结合在经处理的氧化硅表面上。

公开(公告)号：US08852406B2

公开(公告)日：2014-10-07

申请号：US13744557

申请日：2013-01-18

Applicant: Korea Institute of Science and Technology

Inventor： Young Joon Baik ,  Jong Keuk Park ,  Wook Seong Lee

IPC: C23C14/34 ,  C23C14/46 ,  C23C16/34 ,  C23C14/06

CPC classification number: C23C16/342 ,  C23C14/024 ,  C23C14/06 ,  C23C14/0647 ,  C23C14/34 ,  C23C14/46 ,  C23C16/271 ,  Y10T428/30

Abstract: A method for producing a cubic boron nitride (cBN) thin film includes depositing cBN onto nanocrystalline diamond having controlled surface irregularity characteristics to improve the adhesion at the interface of cBN/nanocrystalline diamond, while incorporating hydrogen to a reaction gas upon the synthesis of cBN and controlling the feed time of hydrogen, so that harmful reactions occurring on a surface of nanocrystalline diamond and residual stress applied to cBN may be inhibited. Also, a cBN thin film structure is obtained by the method. The cBN thin film is formed on the nanocrystalline diamond thin film by using a physical vapor deposition process, wherein a reaction gas supplied when the deposition of a thin film occurs is a mixed gas of argon (Ar) with nitrogen (N2), and hydrogen (H2) is added to the reaction gas at a time after the deposition of a thin film occurs.

Abstract translation: 立方氮化硼（cBN）薄膜的制造方法包括将cBN沉积到具有受控的表面不规则特性的纳米晶体金刚石上，以改善在cBN /纳米晶体金刚石的界面处的粘合性，同时在合成cBN时将氢气加入到反应气体中， 控制氢的进料时间，从而可以抑制在金刚石表面发生的有害反应和施加到cBN上的残余应力。 此外，通过该方法获得cBN薄膜结构。 通过使用物理气相沉积工艺在纳米晶体金刚石薄膜上形成cBN薄膜，其中当发生薄膜沉积时供应的反应气体是氩（Ar）与氮气（N 2）的混合气体，氢气 在发生薄膜沉积之后的时刻将（H2）加入到反应气体中。