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公开(公告)号：US20150320378A1
公开(公告)日：2015-11-12
申请号：US14807119
申请日：2015-07-23
CPC分类号： A61B6/464 , A61B6/0407 , A61B6/0457 , A61B6/4266 , A61B6/4441 , A61B6/4464 , A61B6/461
摘要： According to one embodiment, an X-ray diagnosis apparatus includes a couch where a subject is placed, a projector, a display controller, and a system controller. The projector includes an X-ray tube having a cathode and an anode that receives electrons from the cathode and irradiates X-rays to the subject, and a first detector configured to detect X-rays that have passed through the subject and are incident on the detection surface. The display controller displays a first image generated based on first detection data from the projector on a display. Having received an enlargement instruction to display an enlarged image of part of the subject illustrated in the first image, the system controller controls the display controller to display a second image generated based on second detection data obtained by detecting X-rays incident on the partial detection surface corresponding to the anode side in the detection surface as the enlarged image.
摘要翻译： 根据一个实施例，X射线诊断装置包括放置被摄体的沙发，投影仪，显示控制器和系统控制器。 投影仪包括具有从阴极接收电子并将X射线照射到被摄体的阴极和阳极的X射线管，以及第一检测器，被配置为检测穿过被摄体的X射线并入射到 检测面。 显示控制器在显示器上显示基于来自投影仪的第一检测数据生成的第一图像。 在接收到放大指示以显示第一图像所示的被摄体的放大图像之后，系统控制器控制显示控制器显示基于通过检测入射在部分检测上的X射线而获得的第二检测数据而生成的第二图像 作为放大图像，与检测面的阳极侧对应的面。
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公开(公告)号：US20140350350A1
公开(公告)日：2014-11-27
申请号：US14455047
申请日：2014-08-08
CPC分类号： G06T7/0012 , A61B6/12 , A61B6/463 , A61B6/481 , A61B6/487 , A61B6/501 , A61B6/504 , A61B6/5217 , A61F2/82 , A61F2002/823 , G06K9/4604 , G06T7/11 , G06T7/62 , G06T7/64 , G06T2207/10081 , G06T2207/30101
摘要： A medical image processing apparatus includes, an unit (12) extracting a blood vessel wall region from the image in a range including an aneurysm in an object, an unit (13) calculating the blood vessel diameter change rates of the neck portions of the aneurysm, blood vessel curvature, and blood vessel flattening ratio at each of discrete points on a blood vessel region based on the extracted blood vessel region, an unit (14) extracting, from discrete points, feature points at each of which at least one of a blood vessel diameter change rate, blood vessel curvature, and blood vessel flattening ratio exceeds a corresponding one of thresholds and decide a range for the indwelling of a stent graft in accordance with the extracted feature points, and a display unit (19) superimposing and display unrecommended ranges on a stored image.
摘要翻译： 一种医疗用图像处理装置，包括从包含物体中的动脉瘤的范围内的图像中提取血管壁区域的单元（12），计算动脉瘤颈部的血管直径变化率的单元（13） 基于所提取的血管区域在血管区域上的离散点处的血管曲率和血管平坦化比例，从离散点提取各自的特征点的单元（14），其中， 血管直径变化率，血管曲率，血管平坦化比例超过相应的阈值，根据所提取的特征点决定支架移植物的留置范围，以及显示单元（19），叠加显示部 存储图像上的不建议的范围。
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3.发明申请公开(公告)号：US20160371837A1
公开(公告)日：2016-12-22
申请号：US15257664
申请日：2016-09-06
CPC分类号： G06T7/0012 , A61B6/12 , A61B6/463 , A61B6/481 , A61B6/487 , A61B6/501 , A61B6/504 , A61B6/5217 , A61F2/82 , A61F2002/823 , G06K9/4604 , G06T7/11 , G06T7/62 , G06T7/64 , G06T2207/10081 , G06T2207/30101
摘要： A medical image processing apparatus includes, an unit (12) extracting a blood vessel wall region from the image in a range including an aneurysm in an object, an unit (13) calculating the blood vessel diameter change rates of the neck portions of the aneurysm, blood vessel curvature, and blood vessel flattening ratio at each of discrete points on a blood vessel region based on the extracted blood vessel region, an unit (14) extracting, from discrete points, feature points at each of which at least one of a blood vessel diameter change rate, blood vessel curvature, and blood vessel flattening ratio exceeds a corresponding one of thresholds and decide a range for the indwelling of a stent graft in accordance with the extracted feature points, and a display unit (19) superimposing and display unrecommended ranges on a stored image.
摘要翻译： 一种医疗用图像处理装置，包括从包含物体中的动脉瘤的范围内的图像中提取血管壁区域的单元（12），计算动脉瘤颈部的血管直径变化率的单元（13） 基于所提取的血管区域在血管区域上的离散点处的血管曲率和血管平坦化比例，从离散点提取各自的特征点的单元（14），其中， 血管直径变化率，血管曲率，血管平坦化比例超过相应的阈值，根据所提取的特征点决定支架移植物的留置范围，以及显示单元（19），叠加显示部 存储图像上的不建议的范围。
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公开(公告)号：US20170271585A1
公开(公告)日：2017-09-21
申请号：US15387105
申请日：2016-12-21
发明人： Takayuki ISHIKAWA , Harumi SEKI , Shosuke FUJII , Masumi SAITOH
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L45/085 , H01L45/1266 , H01L45/145
摘要： According to one embodiment, a nonvolatile memory device includes a first conductive layer, a second conductive layer, and an intermediate layer. The first conductive layer includes a first element. The first element includes a at least one selected from the group consisting of Ag, Cu, Ni, Co, Ti, Al, and Au. The intermediate layer is provided between the first conductive layer and the second conductive layer. The intermediate layer includes an oxide. The oxide includes a second element and a third element. The second element includes at least one second element being selected from the group consisting of Ti, Ta, Hf, W, Mg, Al, and Zr. The third element is different from the second element and includes at least one selected from the group consisting of Si, Ge, Hf, Al, Ta, W, Zr, Ti, and Mg.
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公开(公告)号：US20140284544A1
公开(公告)日：2014-09-25
申请号：US14022798
申请日：2013-09-10
IPC分类号： H01L45/00
CPC分类号： H01L45/1266 , H01L27/2436 , H01L27/2481 , H01L45/085 , H01L45/1226 , H01L45/1233 , H01L45/145
摘要： A resistance random access memory device according an embodiment includes a first electrode, a second electrode and a resistance change layer. The first electrode includes a metal. The resistance change layer is provided between the first electrode and the second electrode. One of the metal is able to reversibly move within the resistance change layer. The second electrode is formed of a material ionizing less easily than the metal. The resistance change layer contains silicon, oxygen, and nitrogen, a nitrogen concentration of the resistance change layer is less than 46 atomic % and not less than 20 atomic %.
摘要翻译： 根据实施例的电阻随机存取存储器件包括第一电极，第二电极和电阻变化层。 第一电极包括金属。 电阻变化层设置在第一电极和第二电极之间。 金属之一能够在电阻变化层内可逆地移动。 第二电极由比金属更容易离子化的材料形成。 电阻变化层含有硅，氧和氮，电阻变化层的氮浓度小于46原子％且为20原子％以上。
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公开(公告)号：US20170040380A1
公开(公告)日：2017-02-09
申请号：US15227053
申请日：2016-08-03
CPC分类号： H01L27/249 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/145
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode, a first layer, and a second layer. The first electrode includes a first element. The first layer is provided between the first electrode and the second electrode. The first layer includes at least one of an insulator or a first semiconductor. The second layer is provided between the first layer and the second electrode. The second layer includes a first region and a second region. The second region is provided between the first region and the second electrode. The second region includes a second element. A standard electrode potential of the second element is lower than a standard electrode potential of the first element. A concentration of nitrogen in the first region is higher than a concentration of nitrogen in the second region.
摘要翻译： 根据一个实施例，存储器件包括第一电极，第二电极，第一层和第二层。 第一电极包括第一元件。 第一层设置在第一电极和第二电极之间。 第一层包括绝缘体或第一半导体中的至少一个。 第二层设置在第一层和第二电极之间。 第二层包括第一区域和第二区域。 第二区域设置在第一区域和第二电极之间。 第二区域包括第二元件。 第二元件的标准电极电位低于第一元件的标准电极电位。 第一区域中的氮浓度高于第二区域中的氮浓度。
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公开(公告)号：US20170005261A1
公开(公告)日：2017-01-05
申请号：US15266181
申请日：2016-09-15
发明人： Shosuke FUJII , Takayuki ISHIKAWA
IPC分类号： H01L45/00
CPC分类号： H01L45/14 , G11C13/0007 , H01L27/105 , H01L27/2436 , H01L45/00 , H01L45/04 , H01L45/12 , H01L45/1253 , H01L45/146 , H01L49/00
摘要： According to one embodiment, a memory device includes a first layer, a second layer, and a third layer provided between the first layer and the second layer. The first layer includes first interconnections and a first insulating portion. The first interconnections extend in a first direction. The first insulating portion is provided between the first interconnections. The second layer includes a plurality of second interconnections and a second insulating portion. The second interconnections extend in a second direction crossing the first direction. The second insulating portion is provided between the second interconnections. The third layer includes a ferroelectric portion and a paraelectric portion. The ferroelectric portion and the paraelectric portion include hafnium oxide.
摘要翻译： 根据一个实施例，存储器件包括设置在第一层和第二层之间的第一层，第二层和第三层。 第一层包括第一互连和第一绝缘部分。 第一互连沿第一方向延伸。 第一绝缘部分设置在第一互连之间。 第二层包括多个第二互连和第二绝缘部分。 第二互连沿与第一方向交叉的第二方向延伸。 第二绝缘部分设置在第二互连之间。 第三层包括铁电部分和顺电部分。 铁电部分和顺电部分包括氧化铪。
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公开(公告)号：US20160276410A1
公开(公告)日：2016-09-22
申请号：US15069540
申请日：2016-03-14
发明人： Harumi SEKI , Takayuki ISHIKAWA , Masumi SAITOH
CPC分类号： H01L27/2463 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/1253 , H01L45/1266 , H01L45/145 , H01L45/165 , H01L45/1675
摘要： According to one embodiment, a memory device includes a first layer, a second layers, a third layer provided between the first layer and the second layer, and first electrodes. The first layer includes first interconnections and a first insulating portion provided between the first interconnections. The second layer includes second interconnections and a second insulating portion provided between the second interconnections. The third layer includes first and second portions including silicon oxide. The first portion is provided between the first and the second interconnections. The second portion is provided between the first and the second insulating portions. The first electrodes are provided between the first interconnections and the first portion, and include a first material. The second interconnections include a second material. The first material is easier to ionize than the second material. A density of the first portion is lower than a density of the second portion.
摘要翻译： 根据一个实施例，存储器件包括第一层，第二层，设置在第一层和第二层之间的第三层以及第一电极。 第一层包括第一互连和设置在第一互连之间的第一绝缘部分。 第二层包括第二互连和设置在第二互连之间的第二绝缘部分。 第三层包括包括氧化硅的第一和第二部分。 第一部分设置在第一和第二互连之间。 第二部分设置在第一和第二绝缘部分之间。 第一电极设置在第一互连和第一部分之间，并且包括第一材料。 第二互连包括第二材料。 第一种材料比第二种材料更容易离子化。 第一部分的密度低于第二部分的密度。
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公开(公告)号：US20150076439A1
公开(公告)日：2015-03-19
申请号：US14446419
申请日：2014-07-30
发明人： Masumi SAITOH , Takayuki ISHIKAWA , Shosuke FUJII , Hidenori MIYAGAWA , Chika TANAKA , Ichiro MIZUSHIMA
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2436 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/148 , H01L45/1616 , H01L45/1641
摘要： According to one embodiment, a memory device includes a first electrode, a second electrode and a variable resistance layer. The second electrode includes a metal. The metal is more easily ionizable than a material of the first electrode. The variable resistance layer is disposed between the first electrode and the second electrode. The variable resistance layer includes a first layer and a second layer. The first layer has a relatively high crystallization rate. The second layer contacts the first layer. The second layer has a relatively low crystallization rate. The first layer and the second layer are stacked along a direction connecting the first electrode and the second electrode.
摘要翻译： 根据一个实施例，存储器件包括第一电极，第二电极和可变电阻层。 第二电极包括金属。 金属比第一电极的材料更容易电离。 可变电阻层设置在第一电极和第二电极之间。 可变电阻层包括第一层和第二层。 第一层具有较高的结晶速率。 第二层接触第一层。 第二层具有相对低的结晶速率。 第一层和第二层沿着连接第一电极和第二电极的方向堆叠。
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公开(公告)号：US20160141493A1
公开(公告)日：2016-05-19
申请号：US14944568
申请日：2015-11-18
发明人： Harumi SEKI , Takayuki ISHIKAWA , Shosuke FUJII , Masumi SAITOH
IPC分类号： H01L45/00
CPC分类号： H01L45/085 , H01L27/2463 , H01L27/2481 , H01L45/12 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146 , H01L45/148
摘要： According to one embodiment, a nonvolatile memory device includes a first metal layer, a second metal layer, a first layer, a second layer, and a third layer. The first metal layer contains at least one first metal selected from the group consisting of Al, Ni, Ti, Co, Mg, Cr, Mn, Zn, and In. The second metal layer contains at least one second metal selected from the group consisting of Ag, Cu, Fe, Sn, Pb, and Bi. The first layer is provided between the first metal layer and the second metal layer, and contains a first oxide. The second layer is provided between the first layer and the second metal layer, and contains a second oxide. The third layer is provided between the first layer and the second layer, and contains one of a silicon oxide, a silicon nitride, and a silicon oxynitride.
摘要翻译： 根据一个实施例，非易失性存储器件包括第一金属层，第二金属层，第一层，第二层和第三层。 第一金属层含有选自Al，Ni，Ti，Co，Mg，Cr，Mn，Zn和In中的至少一种第一金属。 第二金属层含有选自Ag，Cu，Fe，Sn，Pb和Bi中的至少一种第二金属。 第一层设置在第一金属层和第二金属层之间，并且包含第一氧化物。 第二层设置在第一层和第二金属层之间，并且包含第二氧化物。 第三层设置在第一层和第二层之间，并且包含氧化硅，氮化硅和氮氧化硅之一。
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