公开(公告)号：US06863727B1

公开(公告)日：2005-03-08

申请号：US10110730

申请日：2000-10-13

申请人： Kai-Erik Elers ,  Suvi Päivikki Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi Päivikki Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/285 ,  H01L21/768 ,  C30B25/14

CPC分类号： C30B29/38 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/76843

摘要： This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.

摘要翻译： 本发明涉及通过原子层沉积（ALD）型方法沉积过渡金属氮化物薄膜的方法。 根据该方法，可以将金属源材料的气相脉冲，能够还原金属源材料的还原剂和能够与还原金属源材料反应的氮源材料交替并依次送入反应空间并与 底物。 根据本发明，当使用还原剂时，当与金属源材料反应时能够形成气态反应副产物的硼化合物。