公开(公告)号：US07144809B2

公开(公告)日：2006-12-05

申请号：US10990424

申请日：2004-11-16

申请人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C16/08

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45555 ,  C30B25/02 ,  C30B25/14 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

公开(公告)号：US06863727B1

公开(公告)日：2005-03-08

申请号：US10110730

申请日：2000-10-13

申请人： Kai-Erik Elers ,  Suvi Päivikki Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi Päivikki Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C16/455 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/285 ,  H01L21/768 ,  C30B25/14

CPC分类号： C30B29/38 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45531 ,  C23C16/45534 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  H01L21/28562 ,  H01L21/76843

摘要： This invention concerns a method for depositing transition metal nitride thin films by an Atomic Layer Deposition (ALD) type process. According to the method vapor-phase pulse of a source material, a reducing agent capable of reducing metal source material, and a nitrogen source material capable of reacting with the reduced metal source material are alternately and sequentially fed into a reaction space and contacted with the substrate. According to the invention as the reducing agent is used a boron compound which is capable of forming gaseous reaction byproducts when reacting with the metal source material.

摘要翻译： 本发明涉及通过原子层沉积（ALD）型方法沉积过渡金属氮化物薄膜的方法。 根据该方法，可以将金属源材料的气相脉冲，能够还原金属源材料的还原剂和能够与还原金属源材料反应的氮源材料交替并依次送入反应空间并与 底物。 根据本发明，当使用还原剂时，当与金属源材料反应时能够形成气态反应副产物的硼化合物。

公开(公告)号：US06800552B2

公开(公告)日：2004-10-05

申请号：US10246131

申请日：2002-09-17

申请人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C1632

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45555 ,  C30B25/02 ,  C30B25/14 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.

摘要翻译： 本发明一般涉及沉积过渡金属碳化物薄膜的方法。 特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。 公开了各种金属和碳源气体。 该方法适用于在半导体制造中形成金属碳化物薄膜，特别是在集成电路内形成薄的，导电的扩散阻挡层。

公开(公告)号：US06599572B2

公开(公告)日：2003-07-29

申请号：US09764692

申请日：2001-01-18

申请人： Ville Antero Saanila ,  Kai-Erik Elers ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Ville Antero Saanila ,  Kai-Erik Elers ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C1606

CPC分类号： H01L21/28556 ,  C23C16/08 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76877

摘要： A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.

摘要翻译： 用化学气相沉积工艺在衬底上生长导电准金属薄膜的方法。 将能够将金属源材料还原为还原状态的金属源材料和还原剂蒸发并进料到金属源材料和还原剂与基板接触的反应空间中。 还原剂是具有至少一个硼 - 碳键的硼化合物，当与金属源材料反应时，硼化合物形成气态副产物。 通常，硼化合物是与硼连接的0-3个卤素基团的烷基硼化合物。 金属源材料和还原剂可以在沉积过程中连续或以脉冲进料。

公开(公告)号：US06821889B2

公开(公告)日：2004-11-23

申请号：US10210715

申请日：2002-07-30

申请人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C1608

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45555 ,  C30B25/02 ,  C30B25/14 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

摘要翻译： 本发明一般涉及沉积元素薄膜。 特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。 在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。 优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

公开(公告)号：US07485340B2

公开(公告)日：2009-02-03

申请号：US11634818

申请日：2006-12-05

申请人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C16/08

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45555 ,  C30B25/02 ,  C30B25/14 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

摘要翻译： 本发明一般涉及沉积元素薄膜。 特别地，本发明涉及使用硼化合物作为还原剂通过原子层沉积（ALD）生长元素金属薄膜的方法。 在优选实施方案中，该方法包括将至少一种金属源化合物和至少一种硼源化合物的气相脉冲引入到其中沉积有金属薄膜的基底的反应空间中。 优选地，硼化合物能够将金属源化合物的吸附部分还原成其元电态。

公开(公告)号：US06794287B2

公开(公告)日：2004-09-21

申请号：US10394309

申请日：2003-03-20

申请人： Ville Antero Saanila ,  Kai-Erik Elers ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Ville Antero Saanila ,  Kai-Erik Elers ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： H01L2144

CPC分类号： H01L21/28556 ,  C23C16/08 ,  C23C16/18 ,  H01L21/76843 ,  H01L21/76877

摘要： A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.

摘要翻译： 用化学气相沉积工艺在衬底上生长导电准金属薄膜的方法。 将能够将金属源材料还原为还原状态的金属源材料和还原剂蒸发并进料到金属源材料和还原剂与基板接触的反应空间中。 还原剂是具有至少一个硼 - 碳键的硼化合物，当与金属源材料反应时，硼化合物形成气态副产物。 通常，硼化合物是与硼连接的0-3个卤素基团的烷基硼化合物。 金属源材料和还原剂可以在沉积过程中连续或以脉冲进料。

公开(公告)号：US06482262B1

公开(公告)日：2002-11-19

申请号：US09687204

申请日：2000-10-13

申请人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： C23C1632

CPC分类号： C23C16/0272 ,  C23C16/045 ,  C23C16/08 ,  C23C16/14 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/45555 ,  C30B25/02 ,  C30B25/14 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76807 ,  H01L21/76838 ,  H01L21/76843 ,  H01L21/76871 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/53242 ,  H01L23/53252 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates generally to a method of depositing transition metal carbide thin films. In particular, the invention concerns a method of depositing transition metal carbide thin films by atomic layer deposition (ALD), in which a transition metal source compound and a carbon source compound are alternately provided to the substrate. A variety of metal and carbon source gases are disclosed. The methods are applicable to forming metal carbide thin films in semiconductor fabrication, and particularly to forming thin, conductive diffusion barriers within integrated circuits.

摘要翻译： 本发明一般涉及沉积过渡金属碳化物薄膜的方法。 特别地，本发明涉及通过原子层沉积（ALD）沉积过渡金属碳化物薄膜的方法，其中过渡金属源化合物和碳源化合物交替地提供给基底。 公开了各种金属和碳源气体。 该方法适用于在半导体制造中形成金属碳化物薄膜，特别是在集成电路内形成薄的，导电的扩散阻挡层。

公开(公告)号：US07749871B2

公开(公告)日：2010-07-06

申请号：US11288872

申请日：2005-11-28

申请人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： H01L21/322

CPC分类号： C23C16/45534 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877

摘要： The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

摘要翻译： 本方法提供用于生长适形金属氮化物，金属碳化物和金属薄膜以及从侵蚀性化学品中掺入这些膜的纳米结构结构的工具。 过渡金属，过渡金属碳化物和过渡金属氮化物薄膜在各种表面如金属和氧化物的沉积过程中，腐蚀性化合物（如卤代卤化氢）的量减少。 吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。 还公开了纳入氮化钛（30）和氮化钨（40）的金属氮化物的金属碳化物的纳米级层压结构（20）及其形成方法。

公开(公告)号：US07329590B2

公开(公告)日：2008-02-12

申请号：US10969297

申请日：2004-10-19

申请人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

发明人： Kai-Erik Elers ,  Suvi P. Haukka ,  Ville Antero Saanila ,  Sari Johanna Kaipio ,  Pekka Juha Soininen

IPC分类号： H01L21/322

CPC分类号： C23C16/45534 ,  C23C16/32 ,  C23C16/34 ,  C23C16/44 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/02 ,  C30B29/36 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877

摘要： The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.

摘要翻译： 本方法提供用于生长适形金属氮化物，金属碳化物和金属薄膜以及从侵蚀性化学品中掺入这些膜的纳米结构结构的工具。 过渡金属，过渡金属碳化物和过渡金属氮化物薄膜在各种表面如金属和氧化物的沉积过程中，腐蚀性化合物（如卤代卤化氢）的量减少。 吸气剂保护对卤化氢和卤化铵敏感的表面，如铝，铜，氧化硅和沉积层，以防腐蚀。 还公开了纳入氮化钛（30）和氮化钨（40）的金属氮化物的金属碳化物的纳米级层压结构（20）及其形成方法。