-
公开(公告)号：US11335818B2
公开(公告)日：2022-05-17
申请号：US17144911
申请日：2021-01-08
申请人： KANEKA CORPORATION
IPC分类号： H01L31/0224 , H01L31/18 , H01L31/0747 , H01L31/048
摘要： A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.
-
公开(公告)号：US20210135027A1
公开(公告)日：2021-05-06
申请号：US17144911
申请日：2021-01-08
申请人： KANEKA CORPORATION
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/048 , H01L31/18
摘要： A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.
-
公开(公告)号：US10727360B2
公开(公告)日：2020-07-28
申请号：US16560505
申请日：2019-09-04
申请人： KANEKA CORPORATION
IPC分类号： H01L31/18 , H01L31/072 , H01L31/0224 , H01L31/0747
摘要： A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and forming a separation groove that separates the electrode layer.
-
公开(公告)号：US10205040B2
公开(公告)日：2019-02-12
申请号：US15991702
申请日：2018-05-29
申请人： KANEKA CORPORATION
发明人： Gensuke Koizumi , Daisuke Adachi , Kunihiro Nakano
IPC分类号： H01L31/02 , H01L31/04 , H01L31/05 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0747
摘要： A method for manufacturing a solar cell comprises forming a first conductivity-type silicon-based thin-film on a first surface of a substrate; forming a second conductivity-type silicon-based thin-film different from the first conductivity-type silicon-based thin-film, on a second surface of the substrate that is opposite to the first surface of the substrate; forming a first transparent electrode layer on the first conductivity-type silicon-based thin-film; and forming a second transparent electrode layer on the second conductivity-type silicon-based thin-film; forming a first metal seed layer on a first transparent electrode layer; forming a second metal seed layer on a second transparent electrode layer; forming a third metal seed layer on a peripheral edge and on an end-edge of the second conductivity-type silicon-based thin-film; forming a first plating layer on the first metal seed layer and a third plating layer on the third metal seed layer simultaneously by an electroplating method.
-
公开(公告)号：US10916667B2
公开(公告)日：2021-02-09
申请号：US16221076
申请日：2018-12-14
申请人： KANEKA CORPORATION
IPC分类号： H01L31/0224 , H01L31/0747 , H01L31/048 , H01L31/18
摘要： A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.
-
公开(公告)号：US10361325B2
公开(公告)日：2019-07-23
申请号：US15128360
申请日：2015-03-26
申请人： KANEKA CORPORATION
IPC分类号： H02N6/00 , H01L31/042 , H01L31/043 , H01L31/0224 , H01L31/05 , H01L31/02 , H01L31/0216 , H01L31/0352 , H01L31/077 , H01L31/20
摘要： In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.
-
公开(公告)号：US20180122966A1
公开(公告)日：2018-05-03
申请号：US15856877
申请日：2017-12-28
申请人： Kaneka Corporation
IPC分类号： H01L31/0224 , H01L31/0465 , H01L31/048 , H01L31/18
CPC分类号： H01L31/022425 , H01L31/02013 , H01L31/0465 , H01L31/048 , H01L31/0504 , H01L31/056 , H01L31/0747 , H01L31/1884 , Y02E10/50 , Y02P70/521
摘要： A solar cell module includes a first solar cell including, in the following order, a single-crystalline silicon substrate, a conductive silicon layer, and a back side transparent electrode layer, where the conductive silicon layer and the back side transparent electrode layer are disposed on a back side of the single-crystalline silicon substrate; an encapsulant; and a flexible metal foil disposed between the back side transparent electrode layer and the encapsulant. The flexible metal foil is in contact with the back side transparent electrode layer in a non-bonded state. The encapsulant encapsulates the first solar cell and maintains a contact state between the flexible metal foil and the back side transparent electrode layer.
-
公开(公告)号：US20180062012A1
公开(公告)日：2018-03-01
申请号：US15710343
申请日：2017-09-20
申请人： Kaneka Corporation
IPC分类号： H01L31/0465
CPC分类号： H01L31/0465 , H01L31/0224 , H01L31/022433 , H01L31/022441 , H01L31/0516 , H01L31/0682 , H01L31/0747 , Y02E10/50
摘要： A solar cell includes: first conductivity-type layers and second conductivity-type layers each provided on a rear surface of a semiconductor substrate; first electrodes provided on the first conductivity-type layers; and second electrodes provided on the second conductivity-type layers. The first electrodes and the second electrodes are spaced apart from each other, and the first electrodes include a plurality of regions isolated from one another by the second electrodes disposed therebetween. Each of the plurality of regions of the first electrodes includes a non-mounting electrode section and a wiring-mounting electrode section having a larger electrode height than the non-connection electrode section. In two adjacent first electrode regions, an imaginary line connecting the top of the wiring-mounting electrode section of one of the regions and the top of the wiring-mounting electrode section of the other region does not cross the second electrode disposed between the two regions.
-
公开(公告)号：US11302829B2
公开(公告)日：2022-04-12
申请号：US16499175
申请日：2017-12-22
申请人： KANEKA CORPORATION
IPC分类号： H01L31/0216 , H01L31/0224 , H01L31/18
摘要： A photovoltaic device according to the present disclosure includes: a first-conductivity-type semiconductor film provided on a back side of a semiconductor substrate; a second-conductivity-type semiconductor film in which at least a part thereof is provided in a position different, in plan view, from a position of the first-conductivity-type semiconductor film on the back side of the semiconductor substrate; a protective film, which is formed on a back side of the first-conductivity-type semiconductor film and a back side of the second-conductivity-type semiconductor film, and which includes a conductive portion and a non-conductive transformed portion; and an electrode film formed on a back side of the conductive portion. The transformed portion of the protective film is provided along a conduction path between a back surface of the first-conductivity-type semiconductor film and a back surface of the second-conductivity-type semiconductor film.
-
公开(公告)号：US10854767B2
公开(公告)日：2020-12-01
申请号：US15556469
申请日：2016-03-07
申请人： KANEKA CORPORATION
IPC分类号： H01L31/068 , H01L31/0747 , H01L31/20 , H01L31/18 , H01L31/0216 , H01L31/0224 , H01L31/0352
摘要： The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.
-
-
-
-
-
-
-
-
-
搜索结果
25 条记录 (耗时 0.041 秒)