Solar cell and method for manufacturing solar cell

    公开(公告)号:US12107176B2

    公开(公告)日:2024-10-01

    申请号:US17647937

    申请日:2022-01-13

    摘要: A back-contact solar cell having a first conductivity-type semiconductor layer in a first region on a back side of a semiconductor substrate, and a second conductivity-type semiconductor layer in a second region and the first region on the back side. In the first region, an intrinsic semiconductor layer and the first and second conductivity-type semiconductor layers are stacked successively on the back side. In the second region, the intrinsic semiconductor layer and the second conductivity-type semiconductor layer are stacked on the back side. In a boundary region between the first and second regions, an insulating layer, and the first and second conductivity-type semiconductor layers, are stacked successively on the back side, with the intrinsic semiconductor layer disposed between the layers and the back side. The insulating layer is interposed between the first conductivity-type semiconductor layer in the first region and the second conductivity-type semiconductor layer in the second region.

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20180294366A1

    公开(公告)日:2018-10-11

    申请号:US16002310

    申请日:2018-06-07

    摘要: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region. The second electrode is not disposed over a region where the first conductivity-type semiconductor layer is formed, and thus is separated from the first electrode.

    Solar cell and method for manufacturing same

    公开(公告)号:US10854767B2

    公开(公告)日:2020-12-01

    申请号:US15556469

    申请日:2016-03-07

    摘要: The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

    PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING SAME

    公开(公告)号:US20190393370A1

    公开(公告)日:2019-12-26

    申请号:US16560505

    申请日:2019-09-04

    摘要: A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and forming a separation groove that separates the electrode layer.

    SOLAR CELL AND PRODUCTION METHOD THEREFOR, AND SOLAR CELL MODULE

    公开(公告)号:US20190123221A1

    公开(公告)日:2019-04-25

    申请号:US16221076

    申请日:2018-12-14

    摘要: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

    Method for manufacturing solar cell

    公开(公告)号:US11211519B2

    公开(公告)日:2021-12-28

    申请号:US17000226

    申请日:2020-08-21

    摘要: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution. The linear expansion coefficients of the semiconductor substrate and the lift-off layer satisfy the relational expression: the linear expansion coefficient of the lift-off layer

    Photoelectric conversion device and method for manufacturing same

    公开(公告)号:US10446698B2

    公开(公告)日:2019-10-15

    申请号:US16002310

    申请日:2018-06-07

    摘要: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region. The second electrode is not disposed over a region where the first conductivity-type semiconductor layer is formed, and thus is separated from the first electrode.

    SOLAR CELL AND METHOD FOR MANUFACTURING SAME, AND SOLAR CELL PANEL

    公开(公告)号:US20190109253A1

    公开(公告)日:2019-04-11

    申请号:US16197843

    申请日:2018-11-21

    摘要: A solar cell includes a conductive crystalline silicon substrate, a first conductive silicon layer, a second conductive silicon layer, a first intrinsic silicon layer, and a second intrinsic silicon layer. The first conductive silicon layer and the second conductive silicon layer are disposed on one principal surface of the conductive crystalline silicon substrate and are electrically insulated from each other. The second conductive silicon layer includes a first portion and a second portion, where the first portion is separated from the conductive crystalline silicon substrate by the first intrinsic silicon layer and the first conductive silicon layer, and where the second portion is separated from the conductive crystalline silicon substrate by the second intrinsic silicon layer. The first intrinsic silicon layer has a greater thickness than the second intrinsic silicon layer.

    SOLAR BATTERY AND SOLAR BATTERY MODULE
    10.
    发明申请

    公开(公告)号:US20180062012A1

    公开(公告)日:2018-03-01

    申请号:US15710343

    申请日:2017-09-20

    IPC分类号: H01L31/0465

    摘要: A solar cell includes: first conductivity-type layers and second conductivity-type layers each provided on a rear surface of a semiconductor substrate; first electrodes provided on the first conductivity-type layers; and second electrodes provided on the second conductivity-type layers. The first electrodes and the second electrodes are spaced apart from each other, and the first electrodes include a plurality of regions isolated from one another by the second electrodes disposed therebetween. Each of the plurality of regions of the first electrodes includes a non-mounting electrode section and a wiring-mounting electrode section having a larger electrode height than the non-connection electrode section. In two adjacent first electrode regions, an imaginary line connecting the top of the wiring-mounting electrode section of one of the regions and the top of the wiring-mounting electrode section of the other region does not cross the second electrode disposed between the two regions.