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公开(公告)号：US07151307B2
公开(公告)日：2006-12-19
申请号：US10718426
申请日：2003-11-20
IPC分类号： H01L31/0328 , H01L31/117
CPC分类号： H01L31/1852 , H01L21/02381 , H01L21/02461 , H01L21/02543 , H01L21/02546 , Y02E10/544
摘要： A semiconductor device having at least one layer of a group III–V semiconductor material epitaxially deposited on a group III–V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III–V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.
摘要翻译： 具有外延沉积在与锗衬底相邻的III-V族成核层上的III-V族半导体材料的至少一层的半导体器件。 通过在半导体器件的一个或多个层上引入电触点，可以以相当大的成本节约在各种半导体器件上形成各种光电子和微电子电路，其具有与常规III-V族基板相似的质量。 或者，可以将具有电接触的活性锗器件层引入锗衬底的一部分，以在锗衬底上形成光电子集成电路或双光电子和微电子器件，这取决于电接触是否与电接触 锗衬底和外延层，从而增加了半导体器件的功能。
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公开(公告)号：US07119271B2
公开(公告)日：2006-10-10
申请号：US10356028
申请日：2003-01-31
CPC分类号： H01L31/02168 , H01L31/03046 , H01L31/03048 , H01L31/0687 , H01L31/0725 , H01L31/1852 , Y02E10/544
摘要： A photovoltaic cell or other optoelectronic device having a wide-bandgap semiconductor used in the window layer. This wider bandgap is achieved by using a semiconductor composition that is not lattice-matched to the cell layer directly beneath it and/or to the growth substrate. The wider bandgap of the window layer increases the transmission of short wavelength light into the emitter and base layers of the photovoltaic cell. This in turn increases the current generation in the photovoltaic cell. Additionally, the wider bandgap of the lattice mismatched window layer inhibits minority carrier injection and recombination in the window layer.
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公开(公告)号：US6150603A
公开(公告)日：2000-11-21
申请号：US298248
申请日：1999-04-23
IPC分类号： H01L31/04 , H01L31/068 , H01L31/0232
CPC分类号： H01L31/068 , H01L31/02167 , Y02E10/547
摘要： An improved photovoltaic cell, according to one embodiment, includes a base layer; a primary window layer having a first type of doping, with the primary window layer being disposed over the base layer; and a secondary window layer having the first type of doping, with the secondary window layer being disposed over the primary window layer. In another embodiment, the improved photovoltaic cell has a multilayer back-surface field structure; a base layer disposed over the back-surface field structure; and a primary window layer disposed over the base layer. In yet another embodiment, the photovoltaic cell includes a base layer; and a primary window layer disposed over the base layer, with the primary window layer having a thickness of at least about 1000 Angstroms.
摘要翻译： 根据一个实施例，改进的光伏电池包括基极层; 具有第一类型掺杂的主窗口层，其中所述主窗口层设置在所述基底层上; 以及具有第一类型掺杂的次级窗口层，其中副窗口层设置在主窗口层之上。 在另一个实施例中，改进的光伏电池具有多层背表面场结构; 设置在背面场结构上的基层; 以及设置在所述基底层上的主窗口层。 在另一个实施例中，光伏电池包括基层; 以及设置在所述基底层上的主窗口层，其中所述主窗口层具有至少约1000埃的厚度。
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4.发明授权Multilayer semiconductor structure with phosphide-passivated germanium substrate 有权具有磷化物钝化锗基板的多层半导体结构公开(公告)号：US06380601B1
公开(公告)日：2002-04-30
申请号：US09280771
申请日：1999-03-29
申请人： James H. Ermer , Li Cai , Moran Haddad , Bruce T. Cavicchi , Nasser H. Karam
发明人： James H. Ermer , Li Cai , Moran Haddad , Bruce T. Cavicchi , Nasser H. Karam
IPC分类号： H01L31042
CPC分类号： H01L31/0687 , H01L29/267 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a phosphide material overlies and contacts the first surface of the germanium substrate. A layer of gallium arsenide overlies and contacts the layer of the phosphide material, and electrical contacts may be added to form a solar cell. Additional photovoltaic junctions may be added to form multijunction solar cells. The solar cells may be assembled together to form solar panels.
摘要翻译： 多层半导体结构包括具有第一表面的锗衬底。 锗衬底具有两个区域，大块p型锗区和邻近第一表面的磷掺杂的n型锗区。 一层磷化物材料覆盖并接触锗衬底的第一表面。 砷化镓层覆盖并接触磷化物材料层，并且可以加入电接触以形成太阳能电池。 可以添加额外的光伏结以形成多结太阳能电池。 太阳能电池可以组装在一起以形成太阳能电池板。
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公开(公告)号：US06787818B2
公开(公告)日：2004-09-07
申请号：US10172310
申请日：2002-06-14
申请人： Charles B. Morrison , Rengarajan Sudharsanan , Moran Haddad , Dimitri Krut , Joseph C. Boisvert , Richard R. King , Nasser H. Karam
发明人： Charles B. Morrison , Rengarajan Sudharsanan , Moran Haddad , Dimitri Krut , Joseph C. Boisvert , Richard R. King , Nasser H. Karam
IPC分类号： H01L310328
CPC分类号： H01L31/0687 , H01L31/109 , Y02E10/544
摘要： A diffused junction semiconductor (12) for detecting light (48) at a predetermined wavelength is provided including a base (30) and an epitaxial structure (32) electrically coupled to the base (30). The epitaxial structure (32) forms a p-n junction (38) in the base (30). The epitaxial structure (32) includes at least one diffusion layer (50) electrically coupled to the base (30). At least one of the diffusion layers (50) contributes impurities in at least a portion of the base (30) to form the p-n junction (38) during growth of the epitaxial structure (32). A method for performing the same is also provided.
摘要翻译： 提供了用于检测预定波长的光（48）的扩散结半导体（12），其包括电耦合到基座（30）的基极（30）和外延结构（32）。 外延结构（32）在基底（30）中形成p-n结（38）。 外延结构（32）包括电耦合到基底（30）的至少一个扩散层（50）。 至少一个扩散层（50）在外延结构（32）的生长期间在基底（30）的至少一部分中提供杂质以形成p-n结（38）。 还提供了一种执行该方法的方法。
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6.发明授权Multijunction photovoltaic cells and panels using a silicon or silicon-germanium active substrate cell for space and terrestrial applications 有权使用硅或硅 - 锗活性底物单元进行空间和地面应用的多结光伏电池和面板公开(公告)号：US06340788B1
公开(公告)日：2002-01-22
申请号：US09454063
申请日：1999-12-02
申请人： Richard R. King , Nasser H. Karam , Moran Haddad
发明人： Richard R. King , Nasser H. Karam , Moran Haddad
IPC分类号： H01L3100
CPC分类号： H01J37/3023 , H01J2237/1503 , H01J2237/30488 , H01L31/0687 , H01L31/06875 , Y02E10/544
摘要： An improved photovoltaic cell has an active silicon (Si) or silicon-germanium (SiGe) substrate subcell having an active upper side and characterized by a substrate bandgap. One or more upper subcells are disposed adjacent the upper side and current matched with the substrate subcell, with the upper subcell(s) typically having bandgap(s) greater than the substrate bandgap. A transition layer may be placed intermediate the upper side and the upper subcell(s).
摘要翻译： 改进的光伏电池具有具有活性上侧的活性硅（Si）或硅 - 锗（SiGe）衬底子电池，其特征在于衬底带隙。 一个或多个上部子电池被布置成与上侧相邻并且与衬底子电池匹配的电流，上部子电池通常具有大于衬底带隙的带隙。 过渡层可以放置在上侧和上部子电池的中间。
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公开(公告)号：US06255580B1
公开(公告)日：2001-07-03
申请号：US09556171
申请日：2000-04-20
IPC分类号： H01L310232
CPC分类号： H01L31/068 , H01L31/02167 , Y02E10/547
摘要： An improved photovoltaic cell, according to one embodiment, includes a base layer; a primary window layer having a first type of doping, with the primary window layer being disposed over the base layer; and a secondary window layer having the first type of doping, with the secondary window layer being disposed over the primary window layer. In another embodiment, the improved photovoltaic cell has a multilayer back-surface field structure; a base layer disposed over the back-surface field structure; and a primary window layer disposed over the base layer. In yet another embodiment, the photovoltaic cell includes a base layer; and a primary window layer disposed over the base layer, with the primary window layer having a thickness of at least about 1000 Angstroms.
摘要翻译： 根据一个实施例，改进的光伏电池包括基极层; 具有第一类型掺杂的主窗口层，其中所述主窗口层设置在所述基底层上; 以及具有第一类型掺杂的次级窗口层，其中副窗口层设置在主窗口层之上。 在另一个实施例中，改进的光伏电池具有多层背表面场结构; 设置在背面场结构上的基层; 以及设置在所述基底层上的主窗口层。 在另一个实施例中，光伏电池包括基层; 以及设置在所述基底层上的主窗口层，其中所述主窗口层具有至少约1000埃的厚度。
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公开(公告)号：US20050110041A1
公开(公告)日：2005-05-26
申请号：US10718426
申请日：2003-11-20
申请人： Karim Boutros , Nasser Karam , Dimitri Krut , Moran Haddad
发明人： Karim Boutros , Nasser Karam , Dimitri Krut , Moran Haddad
IPC分类号： H01L31/0328 , H01L31/18
CPC分类号： H01L31/1852 , H01L21/02381 , H01L21/02461 , H01L21/02543 , H01L21/02546 , Y02E10/544
摘要： A semiconductor device having at least one layer of a group III-V semiconductor material epitaxially deposited on a group III-V nucleation layer adjacent to a germanium substrate. By introducing electrical contacts on one or more layers of the semiconductor device, various optoelectronic and microelectronic circuits may be formed on the semiconductor device having similar quality to conventional group III-V substrates at a substantial cost savings. Alternatively, an active germanium device layer having electrical contacts may be introduced to a portion of the germanium substrate to form an optoelectronic integrated circuit or a dual optoelectronic and microelectronic device on a germanium substrate depending on whether the electrical contacts are coupled with electrical contacts on the germanium substrate and epitaxial layers, thereby increase the functionality of the semiconductor devices.
摘要翻译： 具有外延沉积在与锗衬底相邻的III-V族成核层上的III-V族半导体材料的至少一层的半导体器件。 通过在半导体器件的一个或多个层上引入电触点，可以以相当大的成本节约在各种半导体器件上形成各种光电子和微电子电路，其具有与常规III-V族基板相似的质量。 或者，可以将具有电接触的活性锗器件层引入锗衬底的一部分，以在锗衬底上形成光电子集成电路或双光电子和微电子器件，这取决于电接触是否与电接触 锗衬底和外延层，从而增加了半导体器件的功能。
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