公开(公告)号：US20090147118A1

公开(公告)日：2009-06-11

申请号：US12207871

申请日：2008-09-10

Applicant: Karim Sallaudin Karim ,  Farhad Taghibakhsh

Inventor： Karim Sallaudin Karim ,  Farhad Taghibakhsh

IPC: H04N5/335

CPC classification number: H04N5/335 ,  H01L27/14634 ,  H01L27/14658 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/3745 ,  H04N5/37455

Abstract: The present invention discloses structure of a two-gate field effect transistor (FET), named as charge gated FET, and presents various active pixel sensor (APS) and multimode architectures using the device which has only one, or two on-pixel transistors for high resolution, high gain and fast frame rate APS arrays. It is also disclosed a new method of addressing pixels of an APS array by applying the addressing voltage pulse directly to the gate of the amplifying transistor of the pixel architecture, eliminating the row select transistor from the pixel circuit.

Abstract translation: 本发明公开了一种称为电荷门控FET的双栅极场效应晶体管（FET）的结构，并且使用仅具有一个或两个像素上晶体管的器件来呈现各种有源像素传感器（APS）和多模式结构 高分辨率，高增益和快速帧速率APS阵列。 还公开了通过将寻址电压脉冲直接施加到像素结构的放大晶体管的栅极来消除APS阵列的像素的新方法，从像素电路消除了行选择晶体管。

公开(公告)号：US20120080607A1

公开(公告)日：2012-04-05

申请号：US13315793

申请日：2011-12-09

Applicant: Karim Sallaudin Karim

Inventor： Karim Sallaudin Karim

IPC: G01T1/24 ,  H01L31/18 ,  H01L31/02 ,  G01T1/16

CPC classification number: G01T1/247 ,  H01L31/115 ,  H01L31/119

Abstract: The disclosure is directed at a radiation detector comprising a substrate layer of detector material; a set of readout electronics deposited and integrated on one side of the substrate layer; and a contact layer deposited on a side of the substrate layer opposite the set of readout electronics.

Abstract translation: 本公开涉及包括检测器材料的基底层的辐射检测器; 一组读出电子器件，沉积并集成在衬底层的一侧; 以及沉积在衬底层的与读出电子组相对的一侧上的接触层。

公开(公告)号：US10468450B2

公开(公告)日：2019-11-05

申请号：US14245200

申请日：2014-04-04

Applicant: Karim Sallaudin Karim

Inventor： Karim Sallaudin Karim

IPC: H01L29/04 ,  H01L27/146 ,  H01L31/0216 ,  H01L31/0232 ,  H01L31/08

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising at least one semiconducting layer for absorbing photons, a first electrode coupled to a surface of said semiconducting layer, a second electrode coupled to a surface of said semiconducting layer, wherein said first electrode and said second electrode are separated horizontally, and at least one of said electrodes is electrically isolated from said semiconducting layer by an insulating layer; a readout circuit element coupled to said detector element; and a dielectric layer between said detector element and said readout circuit element.

公开(公告)号：US09401383B2

公开(公告)日：2016-07-26

申请号：US14208702

申请日：2014-03-13

Applicant: Karim Sallaudin Karim

Inventor： Karim Sallaudin Karim

IPC: H01L51/00 ,  H01L27/146 ,  H01L27/30

CPC classification number: H01L27/14676 ,  H01L27/14609 ,  H01L27/14685 ,  H01L27/14694 ,  H01L27/308

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising a semiconducting layer for absorbing photons, an insulator layer on at least one surface of said semiconducting layer and at least two electrodes on one surface of said insulator layer; and a switching element wherein at least one layer within said switching element is in the same plane as at least one said layer within said detector element.

Abstract translation: 本公开涉及用于数字X射线成像系统的光电导元件，其由包括用于吸收光子的半导体层，在所述半导体层的至少一个表面上的绝缘体层和在一个表面上的至少两个电极的检测器元件组成 的所述绝缘体层; 以及开关元件，其中所述开关元件内的至少一个层与所述检测器元件内的至少一个所述层在同一平面内。

公开(公告)号：US20150287760A1

公开(公告)日：2015-10-08

申请号：US14245200

申请日：2014-04-04

Applicant: Karim Sallaudin Karim

Inventor： Karim Sallaudin Karim

IPC: H01L27/146 ,  H01L31/028

CPC classification number: H01L27/14663 ,  H01L27/14612 ,  H01L27/14692 ,  H01L31/0216 ,  H01L31/02322 ,  H01L31/085

Abstract: This disclosure is directed at a photoconductive element for a digital X-ray imaging system which consists of a detector element comprising at least one semiconducting layer for absorbing photons, a first electrode coupled to a surface of said semiconducting layer, a second electrode coupled to a surface of said semiconducting layer, wherein said first electrode and said second electrode are separated horizontally, and at least one of said electrodes is electrically isolated from said semiconducting layer by an insulating layer; a readout circuit element coupled to said detector element; and a dielectric layer between said detector element and said readout circuit element.

Abstract translation: 本公开涉及用于数字X射线成像系统的光电导元件，其由包括用于吸收光子的至少一个半导体层的检测器元件，耦合到所述半导体层的表面的第一电极，耦合到 所述半导体层的表面，其中所述第一电极和所述第二电极水平分离，并且所述电极中的至少一个通过绝缘层与所述半导体层电隔离; 耦合到所述检测器元件的读出电路元件; 以及在所述检测器元件和所述读出电路元件之间的介电层。

公开(公告)号：US08199236B2

公开(公告)日：2012-06-12

申请号：US12207871

申请日：2008-09-10

Applicant: Karim Sallaudin Karim ,  Farhad Taghibakhsh

Inventor： Karim Sallaudin Karim ,  Farhad Taghibakhsh

IPC: H04N5/335 ,  H04N3/14 ,  H04N5/235

CPC classification number: H04N5/335 ,  H01L27/14634 ,  H01L27/14658 ,  H04N5/374 ,  H04N5/3741 ,  H04N5/3745 ,  H04N5/37455

Abstract: The present invention discloses structure of a two-gate field effect transistor (FET), named as charge gated FET, and presents various active pixel sensor (APS) and multimode architectures using the device which has only one, or two on-pixel transistors for high resolution, high gain and fast frame rate APS arrays. It is also disclosed a new method of addressing pixels of an APS array by applying the addressing voltage pulse directly to the gate of the amplifying transistor of the pixel architecture, eliminating the row select transistor from the pixel circuit.

Abstract translation: 本发明公开了一种称为电荷门控FET的双栅极场效应晶体管（FET）的结构，并且使用仅具有一个或两个像素上晶体管的器件来呈现各种有源像素传感器（APS）和多模式结构 高分辨率，高增益和快速帧速率APS阵列。 还公开了通过将寻址电压脉冲直接施加到像素结构的放大晶体管的栅极来消除APS阵列的像素的新方法，从像素电路消除了行选择晶体管。