公开(公告)号：US07942976B2

公开(公告)日：2011-05-17

申请号：US11866457

申请日：2007-10-03

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： H01L21/304 ,  B08B3/00

CPC分类号： H01L21/02057 ,  B08B7/0014 ,  H01L21/0209 ,  H01L21/67051 ,  Y10S134/902

摘要： A rinsing liquid supplier includes a temperature adjuster. The temperature adjuster cools DIW to a temperature lower than room temperature. This temperature adjuster cools down DIW to a temperature not more than 10 degrees centigrade for instance, and cooling down to an even lower temperature of 5 degrees centigrade or below is more preferable. Meanwhile, the temperature adjuster maintains DIW at not less than 0 degrees centigrade, which prevents freezing of the DIW. The cooled DIW supplied to a rinsing liquid pipe is discharged from the rinsing liquid discharge nozzle toward the top surface of the substrate, to thereby form a liquid film. Further, the cooled DIW is discharged toward the rear surface of the substrate from the liquid discharge nozzle via the liquid supply pipe, to thereby form the liquid film on the rear surface. Since the liquid films are already cooled, they are frozen in a short time when the cooling gas is discharged toward the top surface and the rear surface of the substrate.

摘要翻译： 冲洗液供应商包括温度调节器。 温度调节器将DIW冷却至低于室温的温度。 该温度调节器例如将DIW冷却至不高于10摄氏度的温度，并且更优选冷却至更低的5摄氏度或更低的温度。 同时，温度调节器将DIW维持在不低于摄氏0度，防止DIW冻结。 供给到冲洗液管的冷却的DIW从冲洗液体排出喷嘴朝向基板的上表面排出，从而形成液膜。 此外，冷却的DIW经由液体供给管从液体排出喷嘴朝向基板的后表面排出，从而在后表面上形成液膜。 由于液膜已经被冷却，所以当冷却气体朝向基板的顶表面和后表面排出时，它们在短时间内被冷冻。

公开(公告)号：US20080078426A1

公开(公告)日：2008-04-03

申请号：US11860173

申请日：2007-09-24

申请人： Katsuhiko MIYA ,  Akira Izumi

发明人： Katsuhiko MIYA ,  Akira Izumi

IPC分类号： B08B3/10

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  Y10S134/902

摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

摘要翻译： 从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从 形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。 因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印 。

公开(公告)号：US08109282B2

公开(公告)日：2012-02-07

申请号：US11860173

申请日：2007-09-24

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： B08B3/10

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  Y10S134/902

摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

摘要翻译： 从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从 形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。 因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印 。

公开(公告)号：US07811412B2

公开(公告)日：2010-10-12

申请号：US10648918

申请日：2003-08-27

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： H01L21/304

CPC分类号： H01L21/67017 ,  H01L21/67028 ,  H01L21/67051

摘要： A substrate processing apparatus comprises a spin chuck holding and rotating a substrate and an atmosphere blocking member, corresponding in planar shape and size to the substrate, arranged oppositely and proximately to the upper surface of the substrate and formed with a processing solution discharge port and a gas discharge port discharging a processing solution and gas to the central portion of the upper surface of the substrate respectively. The atmosphere blocking member is formed with an outer gas discharge port outside the gas discharge port in plan view for discharging the gas to the upper surface of the substrate. The outer gas discharge port is so formed on the atmosphere blocking member that an arrival position of the gas discharged from the outer gas discharge port is closer to the center of the upper surface of the substrate held by a spin base than an intermediate portion between the center and the outer peripheral edge of the upper surface. Thus provided is an apparatus capable of effectively expelling droplets remaining on the substrate before spin-drying the substrate by high-speed rotation.

摘要翻译： 基板处理装置包括：旋转卡盘，其保持并旋转基板和气氛阻挡部件，所述基板和气氛阻挡部件相对于基板的平面形状和尺寸相对地布置在基板的上表面上，并形成有处理液排出口和 气体排出口分别将处理溶液和气体排放到衬底的上表面的中心部分。 气氛阻挡构件在平面图中形成有气体排出口外部的外部气体排出口，用于将气体排放到基板的上表面。 外部气体排出口形成在气氛阻挡构件上，从外部气体排出口排出的气体的到达位置比由旋转基座保持的基板的上表面的中心更靠近 中心和上表面的外周边缘。 因此提供了一种能够在通过高速旋转旋转干燥基板之前有效地排出留在基板上的液滴的装置。

公开(公告)号：US07584760B2

公开(公告)日：2009-09-08

申请号：US10659213

申请日：2003-09-10

申请人： Katsuhiko Miya ,  Akira Izumi ,  Takashi Kawamura ,  Itsuki Kajino

发明人： Katsuhiko Miya ,  Akira Izumi ,  Takashi Kawamura ,  Itsuki Kajino

IPC分类号： B08B3/00

CPC分类号： H01L21/68785 ,  B08B17/00 ,  G03F1/82 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/68792 ,  Y10S134/902

摘要： A substrate (W) is held and rotated in its horizontal position on a spin base (10). A processing liquid can be supplied from a processing liquid lower nozzle 15 to the lower surface of the substrate (W). The upper surface of the substrate (W) is covered with an atmosphere blocking plate (30). A splash guard (50) is disposed so as to circumscribe the substrate (W). A guard (52) is curved such that the vertical cross section of a recovery port (52f) of the splash guard (50) is of substantially U-shape opening to the center of the splash guard (50), so that the maximum internal diameter part of the recovery port (52f) is brought near a guard (53). The space between the internal wall surface of the recovery port (52f) and the substrate (W) is increased to thereby suppress the bounce of the processing liquid flying spattering from the substrate (W) in rotation.

摘要翻译： 衬底（W）在旋转基座（10）的水平位置被保持并旋转。 处理液可以从处理液下喷嘴15供给到基板（W）的下表面。 衬底（W）的上表面被气氛阻挡板（30）覆盖。 防溅罩（50）被设置成围绕基板（W）。 防护罩（52）弯曲成使得防溅罩（50）的回收口（52f）的垂直横截面大体上为U形，通向防溅罩（50）的中心，使得最大内部 回收口（52f）的直径部分靠近防护件（53）。 回收口（52f）的内壁面与基板（W）之间的空间增加，从而抑制从基板（W）旋转而飞溅的处理液体的反弹。

公开(公告)号：US20080017222A1

公开(公告)日：2008-01-24

申请号：US11770276

申请日：2007-06-28

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： B08B3/08 ,  B08B5/04

CPC分类号： H01L21/68728 ,  H01L21/67051 ,  H01L21/6708

摘要： Above a wafer which is held by a spin chuck, a blocking member whose opposed surface to the wafer is approximately horizontal is disposed at a higher position than an organic solvent component supplying outlet which is able to move from a central position of the wafer toward the periphery of the wafer. An organic solvent component nozzle scans (moves) together with the blocking member, thereby efficiently supplying a gas containing an organic solvent component discharged from the organic solvent component supplying outlet onto a surface of the wafer without getting discharged from the vicinity of the surface of the wafer owing to the blocking member. Hence, when the organic solvent component nozzle scans (moves), the concentration of the organic solvent component is always high near the organic solvent component supplying outlet.

摘要翻译： 在由旋转卡盘保持的晶片上方，与晶片相对的表面大致水平的阻挡构件设置在比可以从晶片的中心位置移动到有机溶剂成分供给出口的位置更高的位置 晶片周边。 有机溶剂成分喷嘴与阻挡部件一起扫描（移动），从而有效地将含有从有机溶剂成分供给出口排出的有机溶剂成分的气体供给到晶片的表面，而不从其表面附近排出 晶片由于阻挡构件而产生。 因此，当有机溶剂成分喷嘴扫描（移动）时，有机溶剂成分供给口附近的有机溶剂成分浓度总是高。

公开(公告)号：US20070113874A1

公开(公告)日：2007-05-24

申请号：US11623931

申请日：2007-01-17

申请人： Akira Izumi ,  Katsuhiko Miya

发明人： Akira Izumi ,  Katsuhiko Miya

IPC分类号： B08B7/00 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/08 ,  H01L21/6708 ,  Y10S438/906

摘要： Disclosed is a substrate processing method including a substrate rotating step for rotating a substrate with the substrate held almost horizontally within a chamber; a peripheral edge processing step for discharging a processing liquid to a lower surface of the substrate rotated in the substrate rotating step and causing the processing liquid to flow around an upper surface of the substrate at a peripheral edge thereof from the lower surface of the substrate to process the peripheral edge of the upper surface of the substrate in the chamber; and a both-surface processing step for discharging the processing liquid to both the surfaces of the substrate rotated in the substrate rotating step to process both the surfaces of the substrate in the chamber.

摘要翻译： 公开了一种基板处理方法，该方法包括基板旋转步骤，用于使基板旋转，所述基板几乎水平地保持在室内; 外围边缘处理步骤，用于将处理液体排放到在基板旋转步骤中旋转的基板的下表面，并使处理液体在其周边的基板的上表面周围从基板的下表面流到基板的下表面， 处理腔室中衬底的上表面的周边边缘; 以及用于将处理液体排出到在基板旋转步骤中旋转的基板的两个表面以处理室中的基板的两个表面的两表面处理步骤。

公开(公告)号：US08696825B2

公开(公告)日：2014-04-15

申请号：US13336729

申请日：2011-12-23

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： B08B3/04

CPC分类号： H01L21/67051 ,  H01L21/67028 ,  Y10S134/902

摘要： A rinsing liquid (DIW) is discharged from a rinsing liquid discharge port formed in a blocking member to perform rinsing processing to a substrate surface while a nitrogen gas is supplied into a clearance space, and a liquid mixture (IPA+DIW) is discharged from a liquid mixture discharge port formed in the blocking member to replace the rinsing liquid adhering to the substrate surface with the liquid mixture while the nitrogen gas is supplied into the clearance space. Thus, an increase of the dissolved oxygen concentration of the liquid mixture can be suppressed upon replacing the rinsing liquid adhering to the substrate surface with the liquid mixture, which makes it possible to securely prevent from forming an oxide film or generating watermarks on the substrate surface.

摘要翻译： 从形成在阻挡部件上的冲洗液体排出口排出冲洗液（DIW），在向间隙空间供给氮气的同时，向基板表面进行漂洗处理，并将液体混合物（IPA + DIW）从 形成在所述阻挡构件中的液体混合物排出口，以在将所述氮气供应到所述间隙空间中时，用所述液体混合物代替粘附到所述基板表面的冲洗液。 因此，当用液体混合物代替粘附到基板表面的冲洗液体时，可以抑制液体混合物的溶解氧浓度的增加，这使得可以可靠地防止在基板表面上形成氧化膜或产生水印 。

公开(公告)号：US08029622B2

公开(公告)日：2011-10-04

申请号：US11837575

申请日：2007-08-13

申请人： Katsuhiko Miya ,  Naozumi Fujiwara ,  Akira Izumi

发明人： Katsuhiko Miya ,  Naozumi Fujiwara ,  Akira Izumi

IPC分类号： B08B5/00

CPC分类号： B08B7/0014 ,  H01L21/02052 ,  H01L21/02057 ,  H01L21/67051 ,  H01L21/67109 ,  Y10S134/902

摘要： A cooling gas is discharged from a cooling gas discharge nozzle toward a local section of a front surface of a substrate on which a liquid film is formed. And then the cooling gas discharge nozzle moves from a rotational center position of the substrate toward an edge position of the substrate along a moving trajectory while the substrate is rotated. As a result, of the surface region of the front surface of the substrate, an area where the liquid film has been frozen (frozen area) expands toward the periphery edge from the center of the front surface of the substrate. It is therefore possible to form a frozen film all over the front surface of the substrate while suppressing deterioration of the durability of the substrate peripheral members since a section receiving supply of the cooling gas is limited to a local area on the front surface of the substrate.

摘要翻译： 冷却气体从冷却气体排出喷嘴朝向其上形成有液膜的基板的前表面的局部部分排出。 然后冷却气体排出喷嘴在基板旋转的同时沿着移动轨迹从基板的旋转中心位置朝向基板的边缘位置移动。 结果，在基板的前表面的表面区域中，液膜已被冷冻的区域（冻结区域）从基板的前表面的中心朝向周边边缘扩展。 因此，可以在抑制基板周边部件的耐久性劣化的同时在基板的正面上形成冷冻膜，因为冷却气体的供应部分被限制在基板的正面的局部区域 。

公开(公告)号：US20070295365A1

公开(公告)日：2007-12-27

申请号：US11767902

申请日：2007-06-25

申请人： Katsuhiko Miya ,  Akira Izumi

发明人： Katsuhiko Miya ,  Akira Izumi

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： After rinsing, while rotating a substrate, a front layer part of a rinsing liquid (DIW) adhering to a substrate surface is drained and removed from the substrate surface. This is followed by supply to the substrate surface of a liquid mixture which is obtained by mixing IPA and DIW together. Since a majority of the rinsing liquid on the substrate surface is removed off from the substrate surface, even when micro patterns are formed on the substrate surface, the liquid mixture replaces the liquid component adhering to the gaps between the patterns. Further, the IPA concentration in the liquid mixture supplied to the substrate surface is set to 50% or below. Hence, it is possible to effectively prevent destruction of the patterns while suppressing the consumption amount of

摘要翻译： 冲洗后，在旋转基板的同时，从基板表面排出附着在基板表面上的冲洗液（DIW）的前层部分。 然后，通过将IPA和DIW混合在一起而获得的液体混合物的基板表面供应。 由于基板表面上的大部分冲洗液体从基板表面除去，所以即使在基板表面上形成微图案，液体混合物也替代附着在图案之间的间隙的液体成分。 此外，供给到基板表面的液体混合物中的IPA浓度设定为50％以下。 因此，可以有效地防止图案的破坏同时抑制消耗量