公开(公告)号：US20110024741A1

公开(公告)日：2011-02-03

申请号：US12882404

申请日：2010-09-15

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US07863611B2

公开(公告)日：2011-01-04

申请号：US11269646

申请日：2005-11-09

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US08203146B2

公开(公告)日：2012-06-19

申请号：US12882404

申请日：2010-09-15

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/20

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于1018 / cm3的非晶形氧化物用于N型区域。

公开(公告)号：US20060113565A1

公开(公告)日：2006-06-01

申请号：US11269646

申请日：2005-11-09

申请人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Katsumi Abe ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L31/109

CPC分类号： H01L29/7869

摘要： Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.

摘要翻译： 提供了使用透明氧化膜的半导体器件和电路。 具有P型区域和N型区域的半导体器件，其中电子载流子浓度小于10/30/3/3的非晶形氧化物用于N- 类型区域。

公开(公告)号：US08797246B2

公开(公告)日：2014-08-05

申请号：US13396180

申请日：2012-02-14

申请人： Katsumi Abe

发明人： Katsumi Abe

IPC分类号： G09G3/36

CPC分类号： G09G3/3696 ,  G09G3/3614 ,  G09G3/3648 ,  G09G2300/08 ,  G09G2320/02 ,  G09G2320/0223

摘要： A liquid crystal display substrate has a data driver circuit and a gate driver circuit for driving the liquid crystal display integrated thereon together with a common drive circuit, where common voltages VCOMH and VCOML are applied from the outside through a pad. The gate driver circuit is placed to be adjacent to one of the four terminals of the liquid crystal display. The common drive circuit is placed to be adjacent to the terminal opposite to where the gate driver circuit is placed and as close to the pad as possible while having almost the same width as the area of the gate driver circuit. The pad close to where the common drive circuit is placed is used as the pad for applying the common voltages VCOMH and VCOML.

摘要翻译： 液晶显示基板具有用于驱动集成在其上的液晶显示器的数据驱动电路和栅极驱动电路以及公共驱动电路，其中通过焊盘从外部施加公共电压VCOMH和VCOML。 栅极驱动器电路被放置成与液晶显示器的四个端子中的一个相邻。 公共驱动电路放置成与栅极驱动电路放置的位置相对的端子，并且尽可能靠近焊盘，同时具有与栅极驱动器电路的面积几乎相同的宽度。 靠近公共驱动电路放置的焊盘用作施加公共电压VCOMH和VCOML的焊盘。

公开(公告)号：US08722288B2

公开(公告)日：2014-05-13

申请号：US13503227

申请日：2010-11-04

申请人： Shigetaka Numazawa ,  Katsumi Abe ,  Makoto Koike ,  Kiyotaka Ihara

发明人： Shigetaka Numazawa ,  Katsumi Abe ,  Makoto Koike ,  Kiyotaka Ihara

IPC分类号： G03G15/02

CPC分类号： C07C211/58 ,  G03G5/0614

摘要： [Problems] To provide a novel compound which has a high carrier mobility and is useful as a charge-transporting agent that is not only capable of stably forming a photosensitive layer without precipitating crystals or forming pinholes at the time of forming the photosensitive layer but is also capable of forming an organic photosensitive material for electrophotography that has a high sensitivity and a low residual potential.[Means for Solution] A diphenylnaphthylamine derivative represented by the following general formula (1), wherein R1 to R3 are alkyl groups, k is an integer of 0 to 3, j is an integer of 0 to 4, l is an integer of 0 to 6, and X1 and X2 are hydrocarbon groups having at least one ethylenically unsaturated bond.

摘要翻译： [问题]提供具有高载流子迁移率并可用作电荷输送剂的新型化合物，其不仅能够在形成感光层时不会析出晶体或形成针孔而稳定地形成感光层，而且可以形成光敏层 也能够形成具有高灵敏度和低残留电位的电子照相用有机感光材料。 [解决方案]由以下通式（1）表示的二苯基萘胺衍生物，其中R 1至R 3为烷基，k为0至3的整数，j为0至4的整数，l为0的整数 至6，并且X 1和X 2为具有至少一个烯属不饱和键的烃基。

公开(公告)号：US08654114B2

公开(公告)日：2014-02-18

申请号：US12667827

申请日：2008-07-29

申请人： Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

发明人： Hisae Shimizu ,  Katsumi Abe ,  Ryo Hayashi

IPC分类号： G09G5/00

CPC分类号： G09G3/3258 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/043

摘要： In order to suppress an influence of an electrical stress on a TFT characteristic in use of a TFT, a light emitting display apparatus according to the present invention comprises organic EL devices and driving circuits for driving the organic EL devices. The driving circuit includes plural pixels each having a thin film transistor of which a threshold voltage reversibly changes due to the electrical stress applied between a gate terminal and a source terminal, and a voltage applying unit which sets gate potential of the thin film transistor higher than source potential. The voltage applying unit applies the electrical stress between the gate terminal and the source terminal at a time when the thin film transistor is not driven, so as to drive the thin film transistor in a region that the threshold voltage is saturated to the electrical stress.

摘要翻译： 为了抑制电应力对使用TFT的TFT特性的影响，根据本发明的发光显示装置包括有机EL器件和用于驱动有机EL器件的驱动电路。 驱动电路包括多个像素，每个像素具有薄膜晶体管，其阈值电压由于在栅极端子和源极端子之间施加的电应力而可逆地改变;以及电压施加单元，其将薄膜晶体管的栅极电位设置为高于 源潜力。 电压施加单元在薄膜晶体管未被驱动时在栅极端子和源极端子之间施加电应力，以便在阈值电压饱和到电应力的区域中驱动薄膜晶体管。

公开(公告)号：US08599111B2

公开(公告)日：2013-12-03

申请号：US12162929

申请日：2007-03-08

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

摘要翻译： 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压， 以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路， 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。 此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间 晶体管被控制。

公开(公告)号：US08525175B2

公开(公告)日：2013-09-03

申请号：US13161328

申请日：2011-06-15

申请人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： H01L29/04

CPC分类号： H01L27/1225 ,  H01L27/124

摘要： An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

摘要翻译： 电子设备包括：多个电子元件，每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域，所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜，绝缘膜和元件隔离电极，所述元件隔离电极为电极， 通过绝缘膜与元件隔离区域的半导体膜分离，并施加电压以增加元件隔离区域的半导体膜的电阻，从而使多个电子元件彼此电隔离。

公开(公告)号：US20130214854A1

公开(公告)日：2013-08-22

申请号：US13881266

申请日：2011-10-31

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L29/786 ,  G05F3/02

CPC分类号： H01L29/7869 ,  G05F3/02 ,  H01L27/0705 ,  H01L27/11807 ,  H01L27/1203 ,  H03K17/063 ,  H03K17/693 ,  H03K19/20

摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

摘要翻译： 提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个 与第一半导体接触的电极和与第二半导体接触的两个或多个电极。