公开(公告)号：US20100053041A1

公开(公告)日：2010-03-04

申请号：US12548796

申请日：2009-08-27

申请人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  H04N5/222

CPC分类号： G09G3/325 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0814 ,  G09G2300/0852 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0223

摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.

摘要翻译： 至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性来控制灰度的第一电流，其中所述薄膜晶体管具有背面 至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一 包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

公开(公告)号：US08659519B2

公开(公告)日：2014-02-25

申请号：US12548796

申请日：2009-08-27

申请人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Kenji Takahashi ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30

CPC分类号： G09G3/325 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0814 ,  G09G2300/0852 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/0223

摘要： A pixel circuit including at least a light emitting element, and a thin film transistor that supplies to the light emitting element a first current controlling a gray scale according to luminance-current characteristics of the light emitting element, wherein the thin film transistor has a back gate electrode, at least a driving period in which the thin film transistor supplies the first current to the light emitting element, and a writing period in which a second current is written to the thin film transistor before the driving period in order to pass the first current to the thin film transistor during the driving period are included, and by changing voltages which are applied to the back gate electrode in the driving period and the writing period, current capability to a gate voltage of the thin film transistor is made to differ.

摘要翻译： 至少包括发光元件的像素电路和薄膜晶体管，其向发光元件提供根据发光元件的亮度 - 电流特性控制灰度的第一电流，其中所述薄膜晶体管具有背面 至少一个驱动周期，其中薄膜晶体管将第一电流提供给发光元件;以及写入周期，其中第二电流在驱动周期之前被写入薄膜晶体管，以便通过第一 包括在驱动周期期间到薄膜晶体管的电流，并且通过改变在驱动周期和写入周期中施加到背栅电极的电压，使薄膜晶体管的栅极电压的电流能力不同。

公开(公告)号：US20110092016A1

公开(公告)日：2011-04-21

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/26 ,  H01L21/34

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US20090021536A1

公开(公告)日：2009-01-22

申请号：US12162929

申请日：2006-03-10

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G5/10 ,  G09G3/30

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A new driving circuit is provided. The driving circuit according to the present invention comprises a first period for setting a current to be supplied to a display element, a second period for setting a gray-scale of the display element, and a third period for supplying a driving current to the display element. The present invention, in the driving circuit of the display element, is provided with a current source circuit for supplying a constant current to the display element and a control circuit for controlling the time to supply a constant current to the display element from the current source circuit.

摘要翻译： 提供了新的驱动电路。 根据本发明的驱动电路包括用于设置要提供给显示元件的电流的第一周期，用于设置显示元件的灰度级的第二周期和用于向显示器提供驱动电流的第三周期 元件。 本发明在显示元件的驱动电路中设置有用于向显示元件供给恒定电流的电流源电路和控制电路，用于控制从电流源向显示元件提供恒定电流的时间 电路。

公开(公告)号：US08599111B2

公开(公告)日：2013-12-03

申请号：US12162929

申请日：2007-03-08

申请人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Katsumi Abe ,  Masafumi Sano ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： G09G3/30 ,  G09G5/10

CPC分类号： G09G3/3283 ,  G09G3/2014 ,  G09G3/325 ,  G09G2300/0819 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/066 ,  G09G2320/0238 ,  G09G2320/043

摘要： A driving circuit of a display element includes a current source circuit having a first transistor and a holding circuit for holding a gate voltage of the first transistor during a first period at an electric potential corresponding to a constant current to be supplied to the display element, and a control circuit including a second transistor connected in series to the current source circuit and connected in parallel to the display element and the capacitor element whose one terminal is connected to a gate of the second transistor and the other terminal is connected to a line, and controlling the light emission time of the display element by controlling the second transistor during a third period. A constant voltage is applied from the line during the first period. The gray-scale voltage is applied from the line during a second period, and the gate of the second transistor and the one terminal are short-circuited. In addition, an electric charge based on the difference between the gray-scale voltage and the gate voltage of the second transistor is accumulated in the capacitor element, and a sweep voltage is applied during the third period, so that the ON time of the second transistor is controlled.

摘要翻译： 显示元件的驱动电路包括具有第一晶体管和保持电路的电流源电路，所述保持电路用于在第一周期期间保持与要提供给显示元件的恒定电流相对应的电位的第一晶体管的栅极电压， 以及控制电路，包括与所述电流源电路串联连接并并联连接到所述显示元件的第二晶体管和所述电容器元件，所述电容器元件的一个端子连接到所述第二晶体管的栅极，并且所述另一端子连接到线路， 以及通过在第三周期期间控制所述第二晶体管来控制所述显示元件的发光时间。 在第一周期期间从线路施加恒定电压。 在第二周期期间，从线路施加灰度电压，并且第二晶体管的栅极和一个端子短路。 此外，基于第二晶体管的灰度电压和栅极电压之间的差异的电荷累积在电容器元件中，并且在第三周期期间施加扫描电压，使得第二时间的导通时间 晶体管被控制。

公开(公告)号：US08525175B2

公开(公告)日：2013-09-03

申请号：US13161328

申请日：2011-06-15

申请人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： H01L29/04

CPC分类号： H01L27/1225 ,  H01L27/124

摘要： An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

摘要翻译： 电子设备包括：多个电子元件，每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域，所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜，绝缘膜和元件隔离电极，所述元件隔离电极为电极， 通过绝缘膜与元件隔离区域的半导体膜分离，并施加电压以增加元件隔离区域的半导体膜的电阻，从而使多个电子元件彼此电隔离。

公开(公告)号：US20130214854A1

公开(公告)日：2013-08-22

申请号：US13881266

申请日：2011-10-31

申请人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

发明人： Katsumi Abe ,  Hideya Kumomi ,  Ryo Hayashi ,  Tatsuya Iwasaki

IPC分类号： H01L29/786 ,  G05F3/02

CPC分类号： H01L29/7869 ,  G05F3/02 ,  H01L27/0705 ,  H01L27/11807 ,  H01L27/1203 ,  H03K17/063 ,  H03K17/693 ,  H03K19/20

摘要： Provided is a semiconductor device, including an electrode, a first insulator, a first semiconductor having a bandgap of 2 eV or greater, a second insulator, and a second semiconductor, which are stacked on one another, and at least further including one or more electrodes in contact with the first semiconductor and two or more electrodes in contact with the second semiconductor.

摘要翻译： 提供了一种半导体器件，其包括彼此堆叠的电极，第一绝缘体，具有2eV以上的带隙的第一半导体，第二绝缘体和第二半导体，并且至少进一步包括一个或多个 与第一半导体接触的电极和与第二半导体接触的两个或多个电极。

公开(公告)号：US08084331B2

公开(公告)日：2011-12-27

申请号：US12865032

申请日：2009-03-02

申请人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

发明人： Masato Ofuji ,  Katsumi Abe ,  Hisae Shimizu ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi ,  Yasuyoshi Takai ,  Takehiko Kawasaki ,  Norio Kaneko

IPC分类号： H01L21/331

CPC分类号： H01L29/7869 ,  H01L29/66969 ,  H01L29/78633

摘要： In a method of treating a semiconductor element which at least includes a semiconductor, a threshold voltage of the semiconductor element is changed by irradiating the semiconductor with light with a wavelength longer than an absorption edge wavelength of the semiconductor. The areal density of in-gap states in the semiconductor is 1013 cm−2eV−1 or less. The band gap may be 2 eV or greater. The semiconductor may include at least one selected from the group consisting of In, Ga, Zn and Sn. The semiconductor may be one selected from the group consisting of amorphous In—Ga—Zn—O (IGZO), amorphous In—Zn—O (IZO) and amorphous Zn—Sn—O (ZTO). The light irradiation may induce the threshold voltage shift in the semiconductor element, the shift being of the opposite sign to the threshold voltage shift caused by manufacturing process history, time-dependent change, electrical stress or thermal stress.

摘要翻译： 在处理至少包括半导体的半导体元件的方法中，通过用比半导体的吸收边缘波长更长的光照射半导体来改变半导体元件的阈值电压。 半导体中间隙状态的面密度为1013cm-2eV-1或更小。 带隙可以是2eV或更大。 半导体可以包括选自In，Ga，Zn和Sn中的至少一种。 半导体可以是选自由无定形In-Ga-Zn-O（IGZO），非晶In-Zn-O（IZO）和无定形Zn-Sn-O（ZTO）组成的组中的一种。 光照射可以引起半导体元件中的阈值电压偏移，该偏移与由制造工艺历史，时间依赖变化，电应力或热应力引起的阈值电压偏移相反。

公开(公告)号：US08304298B2

公开(公告)日：2012-11-06

申请号：US12597211

申请日：2008-05-15

申请人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

发明人： Masato Ofuji ,  Katsumi Abe ,  Ryo Hayashi ,  Masafumi Sano ,  Hideya Kumomi

IPC分类号： H01L21/00

CPC分类号： H01L29/7869 ,  H01L27/1233

摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.

摘要翻译： 为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度 第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

公开(公告)号：US20120007085A1

公开(公告)日：2012-01-12

申请号：US13161328

申请日：2011-06-15

申请人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

发明人： Sho Suzuki ,  Katsumi Abe ,  Ryo Hayashi ,  Hideya Kumomi

IPC分类号： H01L29/786 ,  H01L21/02

CPC分类号： H01L27/1225 ,  H01L27/124

摘要： An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another.

摘要翻译： 电子设备包括：多个电子元件，每个电子元件包括半导体膜; 以及设置在所述多个电子元件的相邻元件之间的元件隔离区域，所述元件隔离区域包括具有1.95eV以上的带隙的半导体膜，绝缘膜和元件隔离电极，所述元件隔离电极为电极， 通过绝缘膜与元件隔离区域的半导体膜分离，并施加电压以增加元件隔离区域的半导体膜的电阻，从而使多个电子元件彼此电隔离。