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    Liquid crystal display device and manufacturing method thereof
    3.
    发明授权
    Liquid crystal display device and manufacturing method thereof 有权
    液晶显示装置及其制造方法

    公开(公告)号：US08610868B2

    公开(公告)日：2013-12-17

    申请号：US13042490

    申请日：2011-03-08

    申请人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

    发明人： Terunori Saitou ,  Hidekazu Miyake ,  Takuo Kaitoh ,  Yoshiharu Owaku

    IPC分类号： G02F1/1345

    CPC分类号： G02F1/13458 ,  G02F1/1333 ,  G02F1/136204 ,  G02F2001/133388 ,  G02F2202/103 ,  G02F2202/22

    摘要： In order to prevent dielectric breakdown of TFT or an interlayer insulating film by static electricity with a reduced area at low cost, a liquid crystal display device has a configuration in which an interlayer insulating film and an a-Si film are formed in a display area and a control area inside terminals. Image signal lines and scan lines are insulated from each other through the interlayer insulating film and a-Si film in their intersections. On the other hand, only the interlayer insulating film is formed between static electricity protection lines and an earth line outside the terminals. When static electricity is induced, dielectric breakdown is caused to occur in the area outside the terminals. Thus, the display area and the control area are protected from the static electricity.

    摘要翻译： 为了以低成本减小面积的静电来防止TFT或层间绝缘膜的电介质击穿，液晶显示装置具有在显示区域中形成层间绝缘膜和a-Si膜的构造 和端子内部的控制区域。 图像信号线和扫描线通过其交叉点中的层间绝缘膜和a-Si膜彼此绝缘。 另一方面，在静电保护线与端子外的接地线之间仅形成层间绝缘膜。 当感应到静电时，导致端子外部的区域发生介电击穿。 因此，显示区域和控制区域被保护免受静电。

    Liquid crystal display device
    4.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US07994505B2

    公开(公告)日：2011-08-09

    申请号：US12534904

    申请日：2009-08-04

    申请人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

    发明人： Terunori Saitou ,  Yoshiharu Owaku ,  Takuo Kaitoh ,  Hidekazu Miyake

    IPC分类号： H01L33/00

    CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251 ,  H01L29/04

    摘要： A liquid crystal display device includes a semiconductor layer which is formed of a poly-Si layer and an a-Si layer and formed above a gate electrode with a gate insulating film interposed therebetween. A source electrode or a drain electrode is formed above the semiconductor layer. An n+Si layer is formed between the source electrode or the drain electrode and the semiconductor layer. Since ends of the source electrode or the drain electrode are formed inside ends of the semiconductor layer, leak current at the ends of the semiconductor layer can be reduced.

    摘要翻译： 液晶显示装置包括由多晶硅层和a-Si层形成的半导体层，并形成在栅电极之上，栅极绝缘膜插入其间。 源电极或漏电极形成在半导体层的上方。 在源极或漏电极与半导体层之间形成n + Si层。 由于源电极或漏电极的端部形成在半导体层的内侧端部，所以能够减小半导体层的端部处的漏电流。

    Display device
    5.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号：US20080204619A1

    公开(公告)日：2008-08-28

    申请号：US12071342

    申请日：2008-02-20

    申请人： Terunori Saitou ,  Yoshiharu Owaku ,  Kozo Yasuda ,  Toshio Miyazawa

    发明人： Terunori Saitou ,  Yoshiharu Owaku ,  Kozo Yasuda ,  Toshio Miyazawa

    IPC分类号： G02F1/1343 ,  H01L27/02 ,  H01J1/62

    CPC分类号： G02F1/136204 ,  G02F1/13454 ,  H01L27/1214

    摘要： A display device in which gate drive circuits are formed at both sides of an effective screen, and a static charge shield conductive film is formed to cover the gate drive circuits. In the manufacturing step and after producing the display device, the constant voltage is applied to the static charge shield conductive film via the common pad, the earth connection line and the like.

    摘要翻译： 一种显示装置，其中栅极驱动电路形成在有效屏幕的两侧，并且形成静电荷屏蔽导电膜以覆盖栅极驱动电路。 在制造步骤中，在制造显示装置之后，通过公共焊盘，接地线等将恒定电压施加到静电电荷屏蔽导电膜。

    Display device
    6.
    发明申请
    Display device 审中-公开
    显示设备

    公开(公告)号：US20090121229A1

    公开(公告)日：2009-05-14

    申请号：US12292090

    申请日：2008-11-12

    申请人： Terunori Saitou ,  Yoshiharu Owaku ,  Toshio Miyazawa

    发明人： Terunori Saitou ,  Yoshiharu Owaku ,  Toshio Miyazawa

    IPC分类号： H01L27/088

    CPC分类号： G02F1/1345 ,  G02F1/136286 ,  G02F2001/13629 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248

    摘要： In a display device which includes: an insulation substrate; thin film transistors which are formed on the insulation substrate; and terminal portions which are configured to supply voltages to the thin film transistors, the thin film transistor includes a gate electrode and a gate line which is formed of a material equal to a material of the gate electrode, a metal line is connected to the terminal portion, a first insulation film and a second insulation film which is made of a material different from a material of the first insulation film are sequentially stacked on the gate line, an opening which exposes the gate line is formed in the first insulation film and the second insulation film, a side wall surface of the opening is sequentially covered with a protective film, a first transparent conductive film and a third insulation film, the first transparent conductive film and a second transparent conductive film are sequentially stacked on an exposed portion of the gate line, and the second transparent conductive film is connected with the metal line.

    摘要翻译： 一种显示装置，包括：绝缘基板; 形成在绝缘基板上的薄膜晶体管; 以及被配置为向薄膜晶体管提供电压的端子部分，薄膜晶体管包括栅电极和栅极线，栅极线由与栅电极的材料相等的材料形成，金属线连接到端子 第一绝缘膜和由与第一绝缘膜的材料不同的材料制成的第二绝缘膜依次层叠在栅极线上，在第一绝缘膜中形成露出栅极线的开口， 第二绝缘膜，开口的侧壁表面依次被保护膜，第一透明导电膜和第三绝缘膜覆盖，第一透明导电膜和第二透明导电膜依次层叠在所述第一绝缘膜的暴露部分上 栅极线，第二透明导电膜与金属线连接。

    Liquid crystal display device
    7.
    发明申请
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US20090224247A1

    公开(公告)日：2009-09-10

    申请号：US12379874

    申请日：2009-03-03

    申请人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    发明人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    IPC分类号： H01L33/00

    CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251

    摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.

    摘要翻译： 在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。 按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。 在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。 在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。 为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了 多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

    Display device
    8.
    发明授权
    Display device 有权
    显示设备

    公开(公告)号：US08624256B2

    公开(公告)日：2014-01-07

    申请号：US12219900

    申请日：2008-07-30

    申请人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    发明人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    IPC分类号： H01L27/14

    CPC分类号： H01L27/1251 ,  H01L27/1229

    摘要： The present invention provides a display device which forms a drive circuit using a bottom-gate-type TFT made of poly-Si which generates a small leak current in a periphery of a display region. A gate electrode is made of Mo having a high melting point, and a gate insulation film is formed on the gate electrode. A channel layer constituted of a poly-Si layer is formed on the gate insulation film, and the poly-Si layer is covered with an a-Si layer. An n+Si layer is formed on the a-Si layer, and an SD electrode is formed on the n+Si layer. Although holes are induced in the poly-Si layer when a negative voltage (inverse bias) is applied to the gate electrode, the holes cannot pass through the a-Si layer and hence, no drain current flows. Accordingly, it is possible to realize a bottom-gate-type TFT using poly-silicon which generates a small leak current.

    摘要翻译： 本发明提供一种使用由多晶硅制成的底栅型TFT形成驱动电路的显示装置，其在显示区域的周围产生小的漏电流。 栅电极由具有高熔点的Mo制成，栅极绝缘膜形成在栅电极上。 在栅极绝缘膜上形成由多晶硅层构成的沟道层，多晶硅层被a-Si层覆盖。 在a-Si层上形成n + Si层，在n + Si层上形成SD电极。 虽然当向栅电极施加负电压（反向偏压）时，在多晶硅层中感应到空穴，但是空穴不能通过a-Si层，因此不会流过漏极电流。 因此，可以实现产生小漏电流的多晶硅的底栅型TFT。

    Liquid crystal display device
    9.
    发明授权
    Liquid crystal display device 有权
    液晶显示装置

    公开(公告)号：US08247817B2

    公开(公告)日：2012-08-21

    申请号：US12379874

    申请日：2009-03-03

    申请人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    发明人： Takuo Kaitoh ,  Hidekazu Miyake ,  Takeshi Sakai ,  Terunori Saitou

    IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

    CPC分类号： H01L29/78696 ,  H01L27/1229 ,  H01L27/1251

    摘要： In a bottom-gate-type thin film transistor used in a liquid crystal display device in which a poly-Si layer and an a-Si layer are stacked, a quantity of an ON current which flows in the thin film transistor can be increased. A poly-Si layer and an a-Si layer are stacked on a gate electrode as an active layer by way of a gate insulation film therebetween in order of the poly-Si layer and the a-Si layer. An n+Si layer and a source/drain layer are formed on the a-Si layer thus forming a thin film transistor. A forward current which flows in the thin film transistor mainly flows in the poly-Si layer. To decrease contact resistance against the forward current between the poly-Si layer and the n+Si layer, an edge portion of the a-Si layer and an edge portion of the poly-Si layer assume a concavo-convex shape thus particularly increasing a contact area between the poly-Si layer and the n+Si layer whereby the contact resistance against the forward current can be decreased leading to the increase of a quantity of an ON current.

    摘要翻译： 在层叠多晶硅层和a-Si层的液晶显示装置中使用的底栅型薄膜晶体管中，可以增加流入薄膜晶体管的导通电流量。 按照多晶硅层和a-Si层的顺序，通过栅绝缘膜将多晶Si层和a-Si层层叠在作为有源层的栅电极上。 在a-Si层上形成n + Si层和源/漏层，从而形成薄膜晶体管。 在薄膜晶体管中流动的正向电流主要在多晶硅层中流动。 为了降低与多晶硅层和n + Si层之间的正向电流的接触电阻，a-Si层的边缘部分和多晶硅层的边缘部分呈现凹凸形状，因此特别增加了 多晶硅层和n + Si层之间的接触面积，由此可以减小与正向电流的接触电阻，导致导通电流的增加。

    DISPLAY DEVICE
    10.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20100109010A1

    公开(公告)日：2010-05-06

    申请号：US12608193

    申请日：2009-10-29

    申请人： Hidekazu MIYAKE ,  Takuo Kaitoh ,  Terunori Saitou

    发明人： Hidekazu MIYAKE ,  Takuo Kaitoh ,  Terunori Saitou

    IPC分类号： H01L33/00

    CPC分类号： H01L27/124 ,  H01L27/3262 ,  H01L29/78624

    摘要： A display device having thin film transistors which can efficiently suppress an OFF-leak current while suppressing the decrease of an ON current is provided. The display device includes an insulation substrate, and thin film transistors which are formed on the insulation substrate. Each thin film transistor includes a conductive layer on which a gate electrode is formed, a first insulation layer which is formed on the conductive layer, a semiconductor layer which is formed on the first insulation layer and has a first semiconductor film thereof formed above the gate electrode, the first semiconductor film having a first region and a second region which are spaced apart from each other on an upper surface thereof, a first electrode which is connected to the upper surface of the first semiconductor film via the first region, and a second electrode which is connected to the upper surface of the first semiconductor film via the second region. A portion of the gate electrode which is covered with the first semiconductor film is arranged closer to the first region than the second region.

    摘要翻译： 提供一种具有薄膜晶体管的显示装置，其能够有效地抑制断开电流同时抑制导通电流的降低。 显示装置包括绝缘基板和形成在绝缘基板上的薄膜晶体管。 每个薄膜晶体管包括其上形成有栅电极的导电层，形成在导电层上的第一绝缘层，形成在第一绝缘层上并具有形成在栅极上方的第一半导体膜的半导体层 电极，所述第一半导体膜具有在其上表面上彼此间隔开的第一区域和第二区域;第一电极，其经由所述第一区域连接到所述第一半导体膜的上表面;第二电极， 电极，其经由第二区域连接到第一半导体膜的上表面。 被第一半导体膜覆盖的栅电极的一部分配置成比第二区域更靠近第一区域。