利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

31 条记录 (耗时 0.025 秒)

    Display device and fabrication method thereof
    3.
    发明申请
    Display device and fabrication method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US20090061575A1

    公开(公告)日：2009-03-05

    申请号：US12285997

    申请日：2008-10-17

    申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1285 ,  G02F1/13454

    摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

    摘要翻译： 本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。 在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入 前体膜。 这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。 当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

    Display device and fabrication method thereof
    4.
    发明授权
    Display device and fabrication method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US07727784B2

    公开(公告)日：2010-06-01

    申请号：US12285997

    申请日：2008-10-17

    申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1285 ,  G02F1/13454

    摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

    摘要翻译： 本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。 在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上形成由a-Si层或微粒结晶性p-Si层构成的前体膜，并将其注入 前体膜。 这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。 当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

    Display device and fabrication method thereof
    5.
    发明授权
    Display device and fabrication method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US07456433B2

    公开(公告)日：2008-11-25

    申请号：US11590882

    申请日：2006-11-01

    申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Toshihiko Itoga

    IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

    CPC分类号： H01L27/1285 ,  G02F1/13454

    摘要： The present invention provides a display device which forms thin film transistor circuits differing in characteristics from each other on a substrate in mixture and a fabrication method of the display device. On a glass substrate having a background layer which is formed by stacking an SiN film and an SiO2 film, a precursor film which is constituted of an a-Si layer or a fine particle crystalline p-Si layer is formed and the implantation is applied to the precursor film. Here, an acceleration voltage and a dose quantity are adjusted such that a proper quantity of dopant is dosed in the inside of the precursor film. When the precursor film is melted by laser radiation, the dopant dosed in the precursor film is activated and taken into the precursor.

    摘要翻译： 本发明提供一种显示装置，其在混合物的基板上形成彼此不同的薄膜晶体管电路和显示装置的制造方法。 在具有通过层叠SiN膜和SiO 2膜形成的背景层的玻璃基板上，由a-Si层或细颗粒结晶p-Si层构成的前体膜 并且将植入物施加到前体膜。 这里，调整加速电压和剂量，使得在前体膜的内部配入适量的掺杂剂。 当前体膜通过激光辐射熔化时，投入到前体膜中的掺杂剂被激活并被吸收到前体中。

    Display device and manufacturing method thereof
    6.
    发明授权
    Display device and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US08421940B2

    公开(公告)日：2013-04-16

    申请号：US12405396

    申请日：2009-03-17

    申请人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

    发明人： Takeshi Noda ,  Takuo Kaitoh ,  Hidekazu Miyake ,  Takahiro Kamo

    IPC分类号： G02F1/136

    CPC分类号： H01L27/1251 ,  H01L27/1229 ,  H01L27/1285

    摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.

    摘要翻译： 显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件， 其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到 通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

    Manufacturing method for display device
    7.
    发明申请
    Manufacturing method for display device 审中-公开
    显示装置的制造方法

    公开(公告)号：US20050266594A1

    公开(公告)日：2005-12-01

    申请号：US11138471

    申请日：2005-05-27

    申请人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

    发明人： Takuo Kaitoh ,  Takahiro Kamo ,  Hidekazu Miyake ,  Toshihiko Itoga

    IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L51/50 ,  H05B33/14

    CPC分类号： H01L27/127 ,  H01L27/1214 ,  H01L27/1229 ,  H01L27/1285

    摘要： A manufacturing method for a display device includes: a first thin film transistor that is formed in a first region over a substrate and has a first threshold value according to doping of a first impurity into a semiconductor layer in a channel region; and a second thin film transistor that is formed in a second region over the substrate and has a second threshold value, which is different from the first threshold value, according to doping of a second impurity into a semiconductor layer in a channel region, wherein a crystallized semiconductor layer, which is used in the channel region of the second thin film transistor, is obtained by subjecting a semiconductor layer in the second region to fusing treatment in a state in which the second impurity is applied over the semiconductor layer.

    摘要翻译： 一种显示装置的制造方法，包括：第一薄膜晶体管，其形成在衬底上的第一区域中，并且具有根据第一杂质掺杂到沟道区域中的半导体层中的第一阈值; 以及第二薄膜晶体管，其形成在所述衬底上的第二区域中，并且具有根据第二杂质掺杂到沟道区域中的半导体层中的与所述第一阈值不同的第二阈值，其中， 在第二薄膜晶体管的沟道区域中使用的结晶半导体层通过在第二区域中的半导体层在半导体层上施加第二杂质的状态下进行熔合处理来获得。

    DISPLAY DEVICE
    8.
    发明申请
    DISPLAY DEVICE 审中-公开
    显示设备

    公开(公告)号：US20090261329A1

    公开(公告)日：2009-10-22

    申请号：US12423865

    申请日：2009-04-15

    申请人： Ichiro YAMAKAWA ,  Kazuhiko Horikoshi ,  Yoshiki Yonamoto ,  Naotoshi Akamatsu ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Takahiro Kamo ,  Gi-il Kim ,  Takeshi Sakai ,  Noboru Ooki

    发明人： Ichiro YAMAKAWA ,  Kazuhiko Horikoshi ,  Yoshiki Yonamoto ,  Naotoshi Akamatsu ,  Toshihiko Itoga ,  Takuo Kaitoh ,  Takahiro Kamo ,  Gi-il Kim ,  Takeshi Sakai ,  Noboru Ooki

    IPC分类号： H01L33/00 ,  H01L29/786

    CPC分类号： H01L29/78609 ,  H01L29/66765 ,  H01L29/78669 ,  H01L31/02161

    摘要： Provided is a display device using a TFT serving as a switching element, in which image deterioration of the display device is prevented by suppressing a photo leakage current to be small, and in particular, in which a density of defects which become positive fixed charges by light present in a protective insulating film of the TFT is defined to suppress the photo leakage current. In the display device using the TFT, the TFT includes an insulating film, an amorphous silicon film, a drain electrode and a source electrode, and a protective insulating film laminated on a gate electrode covering a part of a surface of an insulating substrate in the stated order, in which the protective insulating film includes a defect which becomes a positive fixed charge under light irradiation. A surface density of the defects is preferably 2.5×1010 cm−2 or more to 4.0×1010 cm−2 or less.

    摘要翻译： 提供一种使用TFT作为开关元件的显示装置，其中通过抑制光泄漏电流小而防止显示装置的图像劣化，特别是其中通过以下方式成为正固定电荷的缺陷的密度 定义存在于TFT的保护绝缘膜中的光以抑制光漏电流。 在使用TFT的显示装置中，TFT包括绝缘膜，非晶硅膜，漏电极和源电极，以及层叠在覆盖绝缘基板表面的一部分的栅电极上的保护绝缘膜 其中保护绝缘膜包括在光照射下变成正固定电荷的缺陷。 缺陷的表面密度优选为2.5×10 10 cm -2以上至4.0×10 10 cm -2以下。

    Display device and manufacturing method of the same
    9.
    发明授权
    Display device and manufacturing method of the same 有权
    显示装置及其制造方法相同

    公开(公告)号：US07407853B2

    公开(公告)日：2008-08-05

    申请号：US11077255

    申请日：2005-03-11

    申请人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

    发明人： Takuo Kaitoh ,  Eiji Oue ,  Takahiro Kamo ,  Yasukazu Kimura ,  Toshihiko Itoga

    IPC分类号： H01L21/8242

    CPC分类号： G02F1/136213 ,  G02F1/1368 ,  H01L27/1255 ,  H01L27/1288

    摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.

    摘要翻译： 本发明提供一种能够实现制造过程减少的显示装置的制造方法。 在制造方法中，在衬底的上表面上形成半导体层。 在半导体层的上表面上形成绝缘膜。 使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。 在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为 小于第一区域中的绝缘膜的膜厚度。

    MANUFACTURING METHOD OF DISPLAY DEVICE
    10.
    发明申请
    MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
    显示装置的制造方法

    公开(公告)号：US20080176351A1

    公开(公告)日：2008-07-24

    申请号：US11843693

    申请日：2007-08-23

    申请人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

    发明人： Hideaki Shimmoto ,  Takahiro Kamo ,  Takeshi Noda ,  Takuo Kaitoh ,  Eiji Oue

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/1285 ,  H01L29/04

    摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.

    摘要翻译： 本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。 在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤 能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤 。 第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。 第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。